Erratum to: Field-effect passivation on silicon nanowire solar cells

Mallorquí, Anna Dalmau; Alarcón-Lladó, Esther; Mundet, Ignasi Canales; Kiani, Amirreza; Demaurex, Bénédicte; Wolf, Stefaan De; Menzel, Andreas M.; Zacharias, Margit; Morral, Anna Fontcuberta i

doi:10.1007/s12274-016-1058-1

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Nanowire Heterostructure Formation: Growth Vs Etching1

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2020

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“…In addition, covering the side facets of nanowires is employed to passivate surface states and to reduce surface recombination [271]. Such approaches are used for both lattice matched and mismatched shells [272]. Extensive reviews of various radial nanowire heterostructures can be found in Refs.…”

Section: Nanowire Heterostructure Formation: Growth Vs Etchingmentioning

confidence: 99%

Semiconductor nanowires: to grow or not to grow?

McIntyre

Morral

2020

Materials Today Nano

114

122

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Semiconductor nanowires have demonstrated exciting properties for nanophotonics, sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic devices. Fabrication schemes for nanowires are varied, but they fall into three general categories: (1) top-down lithographic patterning and etching of bulk crystals and epitaxial films; (2) bottom-up, locally catalyzed crystal growth of nanowires; and (3) hybrid methods that combine aspects of categories (1) and (2). In this article, we examine the relative merits and unique attributes of each of these paradigms for nanowire synthesis. We review literature relevant to nanowire fabrication methods, faceting and dimensional control (diameter and length), positioning and alignment, doping, bulk and surface defects, and formation of unique nanowire heterostructures and metastable phases. Finally, we describe the factors governing selection among top-down, bottom-up, and hybrid methods to fabricate nanowire structures depending on their desired structural features and applications.

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Section: Nanowire Heterostructure Formation: Growth Vs Etchingmentioning

confidence: 99%