Erratum: “Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy” [Appl. Phys. Lett. <b>79</b>, 1094 (2001)]

Li, Wei; Pessa, M.; Ahlgren, T.; Dekker, J.

doi:10.1063/1.1413737

Cited by 19 publications

(29 citation statements)

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“…Although the origin of these centers is not clearly understood at present, they might have several origins including the presence of extrinsic defects like impurity inclusions related to N incorporation. 44,45 Therefore, the model which holds that the quenching arises from defect or impurity centers induced by the presence of nitrogen, is consistent with the data and it is probably correct.…”

Section: Resultssupporting

confidence: 72%

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Lourenço

Dias

Poças

et al. 2003

Journal of Applied Physics

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GaAsSbN/GaAs strained-layer single quantum wells grown on a GaAs substrate by molecular-beam epitaxy with different N concentrations were studied using the photoluminescence ͑PL͒ technique in the temperature range from 9 to 296 K. A strong redshift in optical transition energies induced by a small increase in N concentration has been observed in the PL spectra. This effect can be explained by the interaction between a narrow resonant band formed by the N-localized states and the conduction band of the host semiconductor. Excitonic transitions in the quantum wells show a successive red/blue/redshift with increasing temperature in the 2-100 K range. The activation energies of nonradiative channels responsible for a strong thermal quenching are deduced from an Arrhenius plot of the integrated PL intensity.

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Section: Resultssupporting

confidence: 72%

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Lourenço

Dias

Poças

et al. 2003

Journal of Applied Physics

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“…N i As As and N i N As ) are energetically favorable in dilute nitride alloys [8]. Experimental data conrm that as-grown GaNAs layers contain a signicant concentration of nitrogen interstitials [9]. Furthermore, it is also known that these complexes are partially responsible for compensation of the tensile and compressive strain in (Ga,In)(N,As) layers grown on GaAs substrate.…”

Section: Methodsmentioning

confidence: 69%

DLTS Investigations of (Ga,In)(N,As)/GaAs Quantum Wells before and after Rapid Thermal Annealing

2014

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Deep level transient spectroscopy was used to investigate deep-level defects in (Ga,In)(N,As)/GaAs triple quantum well structures grown by atmospheric pressure metalorganic vapor phase epitaxy with dierent indium and nitrogen contents and annealed in rapid thermal annealing system. A combination of electron traps that disappear or remain on annealing and a new hole trap that appears on annealing were detected. The revealed electron traps were attributed to N-related complexes or GaAs host-related native point defects. Moreover, it was suggested that the new hole trap observed in the annealed GaAsN/GaAs triple quantum well structure together with the dominant electron trap can act as generation-recombination center responsible for the observed a very poor optical quality among all the investigated multi-quantum well structures.

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“…6,7 Various defects are formed in the material during the growth, and post-growth annealing can be used to eliminate some of them. 8,9 Intrinsic point defects identified in the arsenide-nitrides so far are an As Ga antisite, 10,11 an N interstitial, [12][13][14] and a Ga vacancy. 14 In this work, we have found evidence of vacancies in GaAsN alloy grown by metalorganic vapor phase epitaxy ͑MOVPE͒.…”

mentioning

confidence: 99%

“…8,9 Intrinsic point defects identified in the arsenide-nitrides so far are an As Ga antisite, 10,11 an N interstitial, [12][13][14] and a Ga vacancy. 14 In this work, we have found evidence of vacancies in GaAsN alloy grown by metalorganic vapor phase epitaxy ͑MOVPE͒. We show these vacancies to be Ga vacancies (V Ga ) that exist in defect complexes.…”

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confidence: 99%

Observation of defect complexes containing Ga vacancies in GaAsN

Toivonen

Hakkarainen

Sopanen

et al. 2003

Applied Physics Letters

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Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers. GaAsN layers were found to contain Ga vacancies in defect complexes. The density of the vacancy complexes increases rapidly to the order of 10 18 cm Ϫ3 with increasing N composition and decreases after annealing at 700°C. The anticorrelation of the vacancy concentration and the integrated photoluminescence intensity suggests that the Ga vacancy complexes act as nonradiative recombination centers.

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Erratum: “Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy” [Appl. Phys. Lett. 79, 1094 (2001)]

Abstract: Erratum: "On the kinetics of growth of highly defective GaN epilayers and the origin of the deep trap responsible for yellow-band luminescence" [Appl.

Cited by 19 publications

References 0 publications

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

DLTS Investigations of (Ga,In)(N,As)/GaAs Quantum Wells before and after Rapid Thermal Annealing

Observation of defect complexes containing Ga vacancies in GaAsN

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