Erratum: “Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors” [J. Appl. Phys. 122, 095302 (2017)]

Ghose, Susmita; Rahman, Shafiqur; Hong, Liang; Rojas-Ramírez, Juan Salvador; Jin, Huiqing; Park, Kibog; Klie, Robert F.; Droopad, R.

doi:10.1063/1.5051998

Cited by 12 publications

(21 citation statements)

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“…The O 1s spectra in Figure 5B contain two dominant peaks: the first one is at the binding energy of 530.64–530.95 eV associated with O L bound to Ga atoms which are in consistency with the values reported in the works of literature 21,36,53,58–60 . The second peak centered at the binding energy of 532.0–532.28 eV denotes the non‐lattice oxygen (O NL ), which demonstrates O L ‐deficiency in Ga 2 O 3 thin films.…”

Section: Resultssupporting

confidence: 87%

“…After annealing at 500°C, the ratio of the low oxidation valence state Ga + is sharply declined to 10.8%, and the high oxidation valence state Ga 3+ is scaled up to 89.2% in the Ga 2 O 3 thin film. It implies that the enhanced thermal oxidation reaction transfers the more Ga + oxidation state into Ga 3+ oxidation state 58 . However, as the annealing temperature increases from 500 to 700°C, the Ga + proportion increases slowly to ∼12.6% while the high oxidation state of Ga 3+ falls slowly to ∼87.4%.…”

Section: Resultsmentioning

confidence: 99%

“…The second peak centered at the binding energy of 532.0–532.28 eV denotes the non‐lattice oxygen (O NL ), which demonstrates O L ‐deficiency in Ga 2 O 3 thin films. It can potentially reflect the presence of defective oxides, absorptive hydroxyl groups (H–O), and C–O in the thin films 19,21,54,58–60 . The area proportions of O L versus (O L + O NL ) were calculated of the as‐grown film and annealed films at different temperatures, as seen in Figure 5D.…”

Section: Resultsmentioning

confidence: 99%

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Annealing temperature controlled crystallization mechanism and properties of gallium oxide film in forming gas atmosphere

Wang

Fan

et al. 2022

J Am Ceram Soc.

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Gallium oxide (Ga2O3) films had been fabricated on Al2O3(0001) substrate by employing pulsed laser deposition (PLD) and annealed at different temperatures under forming gas (FG) atmosphere (95% N2 + 5% H2). The influence of annealing temperature on the structural, optical, chemical composition, and surface morphological properties of the Ga2O3 thin films was investigated comprehensively. The annealing processes with hydrogen gas play a crucial role in the characteristics of Ga2O3 thin films. A crystallization mechanism of Ga2O3 films controlled by annealing temperature has been proposed firstly and analyzed systematically, which contains three kinds of competitive mechanism, namely the thermal enhanced crystallization, the enhanced H2 dissociative adsorption on Ga2O3 surfaces, and the high‐temperature decomposition of Ga2O3. Both Ga+ and Ga3+ oxidation valence states were presented in all samples, which indicated lattice oxygen deficiency in Ga2O3 films. The variation of the non‐lattice oxygen proportion of Ga2O3 films related to the crystallization mechanism firstly increased and then decreased with the increase of annealing temperature. The detailed crystallization mechanism of PLD‐Ga2O3 films annealed in FG offers a guideline and references for the further fabrication of high‐quality Ga2O3 films and their applications in high‐performance devices.

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Section: Resultssupporting

confidence: 87%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Annealing temperature controlled crystallization mechanism and properties of gallium oxide film in forming gas atmosphere

Wang

Fan

et al. 2022

J Am Ceram Soc.

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“…Also, Baliga's figure of merit (FOM), which represents the performance of a power device, is very high. This material has the potential to be used in various devices, for example, in field-effect transistors (FETs), Schottky barrier diodes (SBDs) and UV optical devices (Oda et al, 2016;Sasaki et al, 2013;Ghose et al, 2017). Research on -Ga 2 O 3 is more widespread compared with the other phases.…”

Section: Introductionmentioning

confidence: 99%

Reduction of dislocations in α-Ga₂O₃ epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate

Son

Choi

Hong

et al. 2021

Int Union Crystallogr J

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The compound α-Ga2O3 is an ultra-wide-bandgap semiconductor and possesses outstanding properties such as a high breakdown voltage and symmetry compared with other phases. It has been studied for applications in high-performance power devices. However, it is difficult to obtain a high-quality thin films because α-Ga2O3 can only grow heteroepitaxially, which results in residual stress generation owing to lattice mismatch and thermal expansion between the substrate and α-Ga2O3. To overcome this, α-Ga2O3 was grown on a conical frustum-patterned sapphire substrate by halide vapor-phase epitaxy. The surface morphology was crack-free and flat. The α-Ga2O3 grown on a frustum-patterned substrate and a conventional sapphire substrate at 500°C exhibited full-width at half-maxima of 961 and 1539 arcsec, respectively, for 10–12 diffraction. For the former substrate, lateral growth on the pattern and threading dislocation bending towards the pattern suppressed the propagation of threading dislocations generated at the interface, which reduced the threading dislocation propagation to the surface by half compared with that on the latter conventional substrate. The results suggest that conical frustum-patterned sapphire substrates have the potential to produce high-quality α-Ga2O3 epilayers.

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“…As a new ultrawide‐bandgap oxide semiconductor, monoclinic gallium oxide (β‐Ga 2 O 3 , 4.9 eV) has high dielectric constants, high breakdown electric fields, good thermal and chemical stability, and excellent electrical and optical properties . The β‐Ga 2 O 3 materials have attracted intense research interest due to the superior properties and potential applications in ultraviolet transparent electrodes, high‐temperature gas sensors, solar‐blind photodetectors, and power devices . One of particular interest is to grow high‐quality β‐Ga 2 O 3 nanostructures with high surface to volume ratio and good confinement of charge carriers and photon transports .…”

mentioning

confidence: 99%

Nanowire‐Seeded Growth of Single‐Crystalline (010) β‐Ga₂O₃ Nanosheets with High Field‐Effect Electron Mobility and On/Off Current Ratio

Jiang

Song

et al. 2019

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2D β‐Ga2O3 nanosheets, as fundamental materials, have great potential in next generations of ultraviolet transparent electrodes, high‐temperature gas sensors, solar‐blind photodetectors, and power devices, while their synthesis and growth with high crystalline quality and well‐controlled orientation have not been reported yet. The present study demonstrates how to grow single‐crystalline ultrathin quasi‐hexagonal β‐Ga2O3 nanosheets with nanowire seeds and proposes a hierarchy‐oriented growth mechanism. The hierarchy‐oriented growth is initiated by epitaxial growth of a single‐crystalline (2−01)β‐Ga2O3 nanowire on a GaN nanocrystal and followed by homoepitaxial growth of quasi‐hexagonal (010) β‐Ga2O3 nanosheets. The undoped 2D (010) β‐Ga2O3 nanosheet field effect transistor has a field‐effect electron mobility of 38 cm2 V−1 s−1 and an on/off current ratio of 107 with an average subthreshold swing of 150 mV dec−1. The from‐nanowires‐to‐nanosheets technique paves a novel way to fabricate nanosheets, which has great impact on the field of nanomaterial synthesis and growth and the area of nanoelectronics as well.

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Erratum: “Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors” [J. Appl. Phys. 122, 095302 (2017)]

Cited by 12 publications

References 1 publication

Annealing temperature controlled crystallization mechanism and properties of gallium oxide film in forming gas atmosphere

Annealing temperature controlled crystallization mechanism and properties of gallium oxide film in forming gas atmosphere

Reduction of dislocations in α-Ga₂O₃ epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate

Nanowire‐Seeded Growth of Single‐Crystalline (010) β‐Ga₂O₃ Nanosheets with High Field‐Effect Electron Mobility and On/Off Current Ratio

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Erratum: “Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors” [J. Appl. Phys. 122, 095302 (2017)]

Cited by 12 publications

References 1 publication

Annealing temperature controlled crystallization mechanism and properties of gallium oxide film in forming gas atmosphere

Annealing temperature controlled crystallization mechanism and properties of gallium oxide film in forming gas atmosphere

Reduction of dislocations in α-Ga2O3 epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate

Nanowire‐Seeded Growth of Single‐Crystalline (010) β‐Ga2O3 Nanosheets with High Field‐Effect Electron Mobility and On/Off Current Ratio

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Product

Resources

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Reduction of dislocations in α-Ga₂O₃ epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate

Nanowire‐Seeded Growth of Single‐Crystalline (010) β‐Ga₂O₃ Nanosheets with High Field‐Effect Electron Mobility and On/Off Current Ratio