“…As a class of equipment with the ability to convert optical signals into electrical signals, photodetectors (PDs) are crucial components in modern optical-electrical interconnect systems, such as optical communication, digital imaging, remote sensing, medical and biological analysis, etc. The present commercially available PDs based on mature semiconductors as sensitive layers, such as silicon and some compounds (InGaAs, HgCdTe, ZnO...), belong to broadband photodetectors (BPDs), which are sensitive to a wide range of wavebands corresponding to their absorption spectra. − Some PDs have the ability to selectively detect a specific range of wavebands and belong to narrowband photodetectors (NPDs) by adopting various strategies, including adding dedicated bandpass filters, using narrowband absorbing photoactive materials, microcavity structure design, , charge collection narrowing concept, , charge injection narrowing concept, , and heterostructure PD design. − However, traditional BPDs and NPDs still hardly satisfy the needs of application scenarios. Because BPDs may face severe signal interference due to their response to a wide range of wavelengths of light outside of the desired detection band, using NPD responding only to a single waveband may face the risk of signal leakage if the wavelength of the propagating signal is leaked .…”