1999
DOI: 10.1143/jjap.38.l586
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Epitaxial Growth of Zinc Oxide Whiskers by Chemical-Vapor Deposition under Atmospheric Pressure

Abstract: ZnO whiskers were epitaxially grown by a chemical-vapor deposition technique employed at atmospheric pressure. Highly oriented ZnO whiskers grew at a substrate temperature of 550°C on (0001)α-Al2O3 substrates with a growth rate of 3.7 nm/s. X-ray diffractometry revealed that the epitaxial relationship between the whiskers and the substrate was determined as ZnO[1010](0001)//Al2O3[1210](0001) or ZnO[1210](0001)//Al2O3[1010](0001). In addition, the full-width at half maximum … Show more

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Cited by 71 publications
(36 citation statements)
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“…After treatment, the single crystal was washed with deionized water for 30 min. MgO films were prepared using an atmospheric CVD apparatus that was previously employed in obtaining epitaxial ZnO whiskers 11) from Zn(C5H7O2)2. The starting material Mg(C5H7O2)2 (Tokyo Kasei Co., quoted purity of 99.9%), was loaded into a vaporizer and vaporized using an electric heater.…”
Section: Methodsmentioning
confidence: 99%
“…After treatment, the single crystal was washed with deionized water for 30 min. MgO films were prepared using an atmospheric CVD apparatus that was previously employed in obtaining epitaxial ZnO whiskers 11) from Zn(C5H7O2)2. The starting material Mg(C5H7O2)2 (Tokyo Kasei Co., quoted purity of 99.9%), was loaded into a vaporizer and vaporized using an electric heater.…”
Section: Methodsmentioning
confidence: 99%
“…6 Although 1D ZnO nanostructures can be synthesized by various methods, sensors utilizing these nanostructures have several drawbacks. For example, vapor-phase reaction approaches 7,8 require severe environmental conditions such as high temperature and a complicated heating system. Such high temperatures are not suitable for on-chip circuit integration.…”
Section: Introductionmentioning
confidence: 99%
“…Their nanoorder components have been produced by applying various semiconductor production processes such as vapor phase processing (6)(7)(8)(9)(10)(11)(12) and etching processes (13)(14)(15)(16). These production processes of nano rod array structures require expensive equipments such as vacuum chambers.…”
Section: Introductionmentioning
confidence: 99%