Epitaxial Growth of Vertically Aligned and Branched Single‐Crystalline Tin‐Doped Indium Oxide Nanowire Arrays

Low‐Temperature Epitaxial Growth of Vertical In2O3 Nanowires on A‐Plane Sapphire with Hexagonal Cross‐Section

“…In recent years, there has been intensive research in low-dimensional nanostructured materials because of their novel physical properties and a vast number of potential applications. [1][2][3] Consequently, over the past few years, there has been an increasing number of reports on the synthesis of In 2 O 3 and ITO nanowires by using various methods such as carbothermal reduction, [4] thermal evaporation, [5] chemical vapor deposition (CVD), [6,7] laser ablation, [8] sol-gel deposition, [9] and one-step annealing, [10,11] etc. However, the orientations of most of the nanowires were randomly distributed, [12][13][14] (001)) by CVD.…”

“…[15] nanowires with a hexagonal cross-section can also be grown on a-plane sapphire at a significantly lower temperature than those reported in the literature (620 versus 900-1000°C). [4,5,13] It is well known that low-temperature growth in general is a great advantage from the manufacturing point of view. (Reduction of stress due to thermal expansion mismatch, reduction of impurities diffused from the substrate, reduction of production cost, etc., to name just a few.)…”

Complex Nanostructures: Synthesis and Energetic Applications

“…The resulting nanostructures therefore tend to vary in morphologies. This approach has been applied to Si [22], GaP [28], PdSe [29], InAs [30] and indium tin oxide [31] nanostructures. In a slight variation, this strategy has also been applied to solution phase synthesis such as the solution-liquid-solid (SLS) growth [32].…”

Controlled growth, properties, and application of CdS branched nanorod arrays on transparent conducting oxide substrate

“…At present, the most popular strategy in controlled synthesis of semiconductor branched nanostructures is sequential nucleation and growth [3], namely, branched nanostructures which are fabricated by secondary or multiple nucleation and subsequent growth of nanobranches on pre-formed one-dimensional nanostructures. A number of successful cases have been reported in fabrication of semiconductor branched nanowires or nanorods over this strategy via vapor-liquid-solid (VLS) [4][5][6][7][8][9][10][11] and solution-liquid-solid (SLS) processes [12]. For example, Dick et al [4] have firstly synthesized GaP nanowires using Au as catalysts on a GaP (111) substrate, and then re-seeded the nanowire surfaces with Au catalysts again to further grow GaP and InP branches.…”