Superlattices and Microstructures volume 40, issue 4-6, P225-232 2006 DOI: 10.1016/j.spmi.2006.06.021 View full text
T. Kimoto, K. Wada, K. Danno

Abstract: Homoepitaxial growth of 4H-SiC{0001} by hot-wall chemical vapor deposition (CVD) and characterization of deep levels in both n-and p-type epilayers have been investigated. On 4 • off-axis 4H-SiC(0001), formation of macrosteps can be reduced by decreasing the C/Si ratio during CVD, though the growth condition leads to the increase in nitrogen incorporation. The 4H-SiC(0001) face is promising, owing to its very smooth surface morphology even on 4 • off-axis substrates and to its superior quality of the oxide/Si…

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