Epitaxial growth and characterization of Bi1-<i>x</i>Sb<i>x</i> spin Hall thin films on GaAs(111)A substrates

Ueda, Yugo; Khang, Nguyen Huynh Duy; Yao, Kenichiro

doi:10.1063/1.4975492

Cited by 50 publications

(53 citation statements)

References 26 publications

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“…It has been reported that a band gap opens up in thin films of Bi 0.74 Sb 0.26 due to quantum confinement effects. Therefore Bi 0.74 Sb 0.26 films may show topological insulating behavior [41].…”

Section: Figmentioning

confidence: 99%

Spin-orbit torque and Nernst effect in Bi-Sb/Co heterostructures

et al. 2019

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Harmonic measurements of the longitudinal and transverse voltages in Bi-Sb/Co bilayers are presented. A large second harmonic voltage signal due to the ordinary Nernst effect is observed. In experiments where a magnetic field is rotated in the film plane, the ordinary Nernst effect shows the same angular dependence in the transverse voltage as the damping-like spin-orbit torque and in the longitudinal voltage as the unidirectional spin-Hall magneto-resistance respectively. Therefore, the ordinary Nernst effect can be a spurious signal in spin-orbit torque measurements, leading to an overestimation of the spin-Hall angle in topological insulators or semimetals. arXiv:1810.05674v1 [cond-mat.mes-hall]

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Section: Figmentioning

confidence: 99%

Spin-orbit torque and Nernst effect in Bi-Sb/Co heterostructures

et al. 2019

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“…However, a large lattice mismatch sometimes does not induce a strain on 2D materials. For instance, 2D BiSb can be grown on GaAs(111) or MnGa substrate without strain effect despite the large lattice mismatch between them . Nevertheless, the substrate still contributes a lot in the system.…”

Section: Theoretical Design Of 2d V‐v Binary Materialsmentioning

confidence: 99%

“…In 2017, Hai et al reported the MBE growth of high‐quality β‐BiSb nanosheets on GaAs(111) substrates . Through optimizing the growth conditions, the Sb concentration can be modified from 0 to 1.…”

Section: Realizing 2d V‐v Binary Materialsmentioning

confidence: 99%

“…To realize SOT, TIs with spin Hall effect should possess both a high conductivity and large spin Hall angle. BiSb nanosheets have been examined to possess a high conductivity exceeding 10 5 Ω −1 m −1 . Therefore, combined with its strong SOC effect and high carrier mobility, BiSb is suitable for SOT switching in magnetoresistive random‐access memory (MRAM).…”

Section: Applications Of 2d V‐v Binary Materialsmentioning

confidence: 99%

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2D V‐V Binary Materials: Status and Challenges

et al. 2019

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The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adma.201902352. 2D phosphorene, arsenene, antimonene, and bismuthene, as a fast-growing family of 2D monoelemental materials, have attracted enormous interest in the scientific community owing to their intriguing structures and extraordinary electronic properties. Tuning the monoelemental crystals into bielemental ones between group-VA elements is able to preserve their advantages of unique structures, modulate their properties, and further expand their multifunctional applications. Herein, a review of the historical work is provided for both theoretical predictions and experimental advances of 2D V-V binary materials. Their various intriguing electronic properties are discussed, including band structure, carrier mobility, Rashba effect, and topological state. An emphasis is also given to their progress in fabricated approaches and potential applications. Finally, a detailed presentation on the opportunities and challenges in the future development of 2D V-V binary materials is given.

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“…The electronic structure of Bi and Sb has been measured in several experiments by angle-resolved photoemission spectroscopy (ARPES) [7][8][9][10][11][12][13][14][15]. The first-ever three dimensional topological insulator (TI) has been realized in the Bi 1−x Sb x alloy [16][17][18][19][20][21][22]. Both Bi and Sb are semimetals with a negative band gap which separates the conduction and valence bands everywhere in the Brillouin zone.…”

Section: Introductionmentioning

confidence: 99%

Band Topology of Bismuth Quantum Films

Chang

Wang

et al. 2019

Crystals

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Bismuth has been the key element in the discovery and development of topological insulator materials. Previous theoretical studies indicated that Bi is topologically trivial and it can transform into the topological phase by alloying with Sb. However, recent high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements strongly suggested a topological band structure in pure Bi, conflicting with the theoretical results. To address this issue, we studied the band structure of Bi and Sb films by ARPES and first-principles calculations. The quantum confinement effectively enlarges the energy gap in the band structure of Bi films and enables a direct visualization of the Z 2 topological invariant of Bi. We find that Bi quantum films in topologically trivial and nontrivial phases respond differently to surface perturbations. This way, we establish experimental criteria for detecting the band topology of Bi by spectroscopic methods.

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Epitaxial growth and characterization of Bi1-xSbx spin Hall thin films on GaAs(111)A substrates

Cited by 50 publications

References 26 publications

Spin-orbit torque and Nernst effect in Bi-Sb/Co heterostructures

Spin-orbit torque and Nernst effect in Bi-Sb/Co heterostructures

2D V‐V Binary Materials: Status and Challenges

Band Topology of Bismuth Quantum Films

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