Epitaxial CeO2 films as buffer layers for high-temperature superconducting thin films

Wu, X. D.; Dye, R. C.; Muenchausen, R. E.; Foltyn, S. R.; Maley, M. P.; Rollett, A.D.; Garcia, Anthony; Nogar, N. S.

doi:10.1063/1.104994

Cited by 196 publications

(58 citation statements)

References 11 publications

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“…Finally, it has a lattice parameter that matches significantly closely with that of silicon [5] and high-T c superconducting (HTS) materials. [6] As a matter of fact, CeO 2 represents a considerable challenge to the most commonly used buffer layers for the growth of YBa 2 Cu 3 O 7 thin films on those substrates for which there is highest industrial demand. [7±10] Several techniques have been used to prepare CeO 2 thin films, including magnetron sputtering, [11] electron beam evaporation, [12] pulsed laser deposition, [13] and molecular beam epitaxy (MBE).…”

Section: Introductionmentioning

confidence: 99%

Volatile CeIII Hexafluoroacetylacetonate Glyme Adducts as Promising Precursors for the MOCVD of CeO2 Thin Films

Malandrino¹,

Nigro²,

Benelli³

et al. 2000

Chem. Vap. Deposition

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Three novel monomeric glyme adducts of cerium hexafluoroacetylacetonate (Ce(hfa) 3 ×diglyme 1, Ce(hfa) 3 ×diethyldiglyme 2, and Ce(hfa) 3 ×dibutyldiglyme 3) have been synthesized adopting a one-pot procedure and characterized by elemental analyses, mass spectrometry, and infrared spectroscopy. Single-crystal X-ray diffraction (XRD) studies provide evidence of a mononuclear nine-coordinated complex with a monocapped square antiprismatic structure of the Ce(hfa) 3 ×diglyme (monoclinic system, space group = P2 1 /c; a = 10.037(2) , b = 15.643(5) , c = 21.080(5) , b = 103.460(5), Z = 4). The thermal analyses of all three compounds revealed high volatility and good thermal stability with low residue. The adducts 1±3 have better mass transport properties and thermal behavior than conventional cerium metal±organic chemical vapor deposition (MOCVD) precursors, and have been successfully applied to CeO 2 film depositions. The good quality of the deposited layers indicates that the adducts are very attractive precursors for MOCVD applications.

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Section: Introductionmentioning

confidence: 99%

Volatile CeIII Hexafluoroacetylacetonate Glyme Adducts as Promising Precursors for the MOCVD of CeO2 Thin Films

Malandrino¹,

Nigro²,

Benelli³

et al. 2000

Chem. Vap. Deposition

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“…To avoid high microwave losses in such application, it is necessary to grow lms on sapphire substrates, with suitable buer layer to improve matching of the lattice parameters and to prevent chemical reaction between the superconductor and the substrate. It has been found that CeO 2 is the excellent material for the buer between the sapphire and the YBCO [3,4]. It is chemically very stable, it has high melting temperature (2400…”

Section: Introductionmentioning

confidence: 99%

Optimization of the Superconducting Properties of Laser Ablated YBa₂Cu₃O_7-δFilms on CeO₂-Buffered Sapphire

et al. 2012

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We use pulsed laser deposition to grow YBa2Cu3O 7−δ (YBCO) superconducting lms for microwave applications. The lms are grown on R-cut sapphire substrates, with CeO2 buer layers, which are re-crystallized at high temperature prior to YBCO growth. Using the atomic force microscopy (AFM) and X-ray diractometry we determine the optimal temperature for recrystallization (1000• C) and the optimal buer layer thickness (30 nm).The properties of YBCO lms of various thickness, grown on the optimized CeO2 buer layers, are studied using several methods, including AFM, magnetooptical imaging, and transport experiments. The YBCO lm roughness is found to increase with the increasing lm thickness, but the magnetic ux penetration in the superconducting state remains homogeneous. The superconducting parameters (the critical temperature and the critical current density) are somewhat lower than the similar parameters for YBCO lms deposited on mono-crystalline substrates.

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“…While CaF 2 thin films were grown in vacuum, CeO 2 films can be grown in an O 2 background which tends to stabilize the (100) orientation. 1 Even so, we have found that if the growth temperature is too high then (111) lines appear in the x-ray diffraction (XRD) spectra of the CeO 2 film. We also find that attempting to grow YBCO on CeO 2 which has been grown at too high a substrate temperature, results in an insulating, transparent film.…”

Section: Introductionmentioning

confidence: 99%

“…While there is a large lattice mismatch between CeO 2 and the (1102) face of sapphire, (100) CeO 2 can be grown on sapphire under the right conditions. 1,2 In this paper, we report on work towards understanding the growth of CeO 2 thin films.…”

Section: Introductionmentioning

confidence: 99%

Afm Study of CeO₂ Growth on Sapphire as a Buffer Layer for YBa₂Cu₃O₇

et al. 1995

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The structure of CeO 2 films grown on (1102) sapphire and on YBCO thin films was investigated. The films reported on here were grown by pulsed excimer laser deposition and their surface structure was probed using atomic force microscopy. We found that CeO 2 films grown on sapphire were epitaxial with a granular structure which is smooth on an atomic scale. We see evidence of a surface reconstruction on a very smooth CeO 2 (100) oriented surface. At higher growth temperatures, three dimensional islands begin to form. When a CeO 2 film is grown on top of a YBCO film, the growth mode is two dimensional. The steps in this layer by layer growth are a surprisingly large 2 nm. This is about equal to 4 times the CeO 2 lattice constant. This step height appears to be temperature dependent.

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Epitaxial CeO2 films as buffer layers for high-temperature superconducting thin films

Cited by 196 publications

References 11 publications

Volatile CeIII Hexafluoroacetylacetonate Glyme Adducts as Promising Precursors for the MOCVD of CeO2 Thin Films

Volatile CeIII Hexafluoroacetylacetonate Glyme Adducts as Promising Precursors for the MOCVD of CeO2 Thin Films

Optimization of the Superconducting Properties of Laser Ablated YBa₂Cu₃O_7-δFilms on CeO₂-Buffered Sapphire

Afm Study of CeO₂ Growth on Sapphire as a Buffer Layer for YBa₂Cu₃O₇

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Epitaxial CeO2 films as buffer layers for high-temperature superconducting thin films

Cited by 196 publications

References 11 publications

Volatile CeIII Hexafluoroacetylacetonate Glyme Adducts as Promising Precursors for the MOCVD of CeO2 Thin Films

Volatile CeIII Hexafluoroacetylacetonate Glyme Adducts as Promising Precursors for the MOCVD of CeO2 Thin Films

Optimization of the Superconducting Properties of Laser Ablated YBa2Cu3O7-δFilms on CeO2-Buffered Sapphire

Afm Study of CeO2 Growth on Sapphire as a Buffer Layer for YBa2Cu3O7

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Optimization of the Superconducting Properties of Laser Ablated YBa₂Cu₃O_7-δFilms on CeO₂-Buffered Sapphire

Afm Study of CeO₂ Growth on Sapphire as a Buffer Layer for YBa₂Cu₃O₇