Enhancing the efficiency of CIGS thin film solar cells by inserting novel back surface field (SnS) layer

Benabbas, Sabrina; Heriche, H.; Rouabah, Z.; Chelali, N.

doi:10.1109/nawdmpv.2014.6997611

Cited by 11 publications

(5 citation statements)

References 10 publications

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“…As the ZnMgO thickness shows a lesser impact on the J SC and shows a value of ranges 35.6092 mA/cm 2 - 35.6091 mA/cm 2 at 0.1–0.2 μm, respectively. A similar trend can be observed for V OC [ 29 ]. It can be noted that the highest value of efficiency of 17.37 % is reached for 0.1 μm of the ZnMgO layer.…”

Section: Resultssupporting

confidence: 85%

Enhancement of efficiency in CsSnI3 based perovskite solar cell by numerical modeling of graphene oxide as HTL and ZnMgO as ETL

Bhattarai,

Hossain,

Pandey

et al. 2024

Heliyon

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Section: Resultssupporting

confidence: 85%

Enhancement of efficiency in CsSnI3 based perovskite solar cell by numerical modeling of graphene oxide as HTL and ZnMgO as ETL

Bhattarai,

Hossain,

Pandey

et al. 2024

Heliyon

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“…Absorbing layers with various bandgap structures and thicknesses are devised over the molybdenum layer. To enhance the efficiency of CIGS solar cell, some researchers proposed adding a second absorbing layer with a distinct bandgap structure and thickness (Benabbas et al , 2014; Zhang et al , 2017). The bandgap of the second absorbing layer can be constant or graded [9,10].…”

Section: Device Structure and Materialsmentioning

confidence: 99%

“…Although CIGS solar cell has come to mass production, it needs further optimization to gain enhanced efficiency cells and low-cost fabrication process. Various factors may contribute to increase the efficiency of CIGS cells, namely, thickness of layers (Benmir and Aida, 2013), bandgap engineering, especially for absorbing layers (Saadat et al , 2016; Doriani et al , 2015), adding a second absorbing layer (Yang et al , 2008), using various materials as absorbing or buffer layers (Benmir and Aida, 2013), doping density and temperature (Benabbas et al , 2014; Mezghache and Hadjoudja, 2013).…”

Section: Introductionmentioning

confidence: 99%

“…Defect recombination centers have a significant effect on the performance of CIGS solar cells by changing recombination rate and charge density (Doriani et al , 2015; Ullah et al , 2014). To achieve valid results, we use previously reported experimental parameters in our simulations (Benabbas et al , 2014; Rampino et al , 2012; Ullah et al , 2014). Our results show that the introduced structure has better performance in comparison to CIGS solar cells with one absorbing layer either having a constant bandgap or a graded one.…”

Section: Introductionmentioning

confidence: 99%

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Highly improvement in efficiency of Cu(In,Ga)Se₂ thin film solar cells

Sajadnia

Dehghani

Noraeepoor

et al. 2020

WJE

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Purpose The purpose of this study is to design and optimize copper indium gallium selenide (CIGS) thin film solar cells. Design/methodology/approach A novel bi-layer CIGS thin film solar cell based on SnS is designed. To improve the performance of the CIGS based thin film solar cell a tin sulfide (SnS) layer is added to the structure, as back surface field and second absorbing layer. Defect recombination centers have a significant effect on the performance of CIGS solar cells by changing recombination rate and charge density. Therefore, performance of the proposed structure is investigated in two stages successively, considering typical and maximum reported trap density for both CIGS and SnS. To achieve valid results, the authors use previously reported experimental parameters in the simulations. Findings First by considering the typical reported trap density for both SnS and CIGS, high efficiency of 36%, was obtained. Afterward maximum reported trap densities of 1 × 1019 and 5.6 × 1015 cm−3 were considered for SnS and CIGS, respectively. The efficiency of the optimized cell is 27.17% which is achieved in CIGS and SnS thicknesses of cell are 0.3 and 0.1 µm, respectively. Therefore, even in this case, the obtained efficiency is well greater than previous structures while the absorbing layer thickness is low. Originality/value Having results similar to practical CIGS solar cells, the impact of the defects of SnS and CIGS layers was investigated. It was found that affixing SnS between CIGS and Mo layers causes a significant improvement in the efficiency of CIGS thin-film solar cell.

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“…This can be done by using another p-type thin layer between CIGS and the metal back contact electrode. This new layer will provide additional hole tunneling as well as reduce back surface recombination [4,5]. The main component of the solar cell is the p-n junction, which is formed by n-type buffer layer and p-type absorber layer.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Investigation on Performance Enhancement of CIGS Based Solar Cells

Barman¹,

Kalita²

2020

J. Nano- Electron. Phys.

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The main objective of this work is to investigate the CIGS solar cell performance by replacing the toxic CdS buffer layer from the conventional solar cell structure Ag/ITO/ZnO/CdS/CIGS/W by the non-toxic ZnSe layer using SCAPS-1D software. J-V characteristics of the simulated cell structure show that the efficiency of the solar cell increases from 23.23 % to 23.58 % (with Voc of 0.8202 V, Jsc of 34.86 mA/cm 2 and FF of 82.49 %) due to the use of ZnSe layer. The increase in the efficiency of the cell is attributed to the decrease in photon absorption in the buffer layer due to higher band gap of ZnSe. An additional thin layer was inserted between CIGS and the back contact (W) to eliminate the back surface recombination. This new layer provided an additional hole tunneling action which led to an increase in the solar cell efficiency up to 24.64 %. Moreover, an attempt has been made to investigate the dependence of the CIGS solar cell efficiency on the operating temperature.

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Enhancing the efficiency of CIGS thin film solar cells by inserting novel back surface field (SnS) layer

Cited by 11 publications

References 10 publications

Enhancement of efficiency in CsSnI3 based perovskite solar cell by numerical modeling of graphene oxide as HTL and ZnMgO as ETL

Enhancement of efficiency in CsSnI3 based perovskite solar cell by numerical modeling of graphene oxide as HTL and ZnMgO as ETL

Highly improvement in efficiency of Cu(In,Ga)Se₂ thin film solar cells

Theoretical Investigation on Performance Enhancement of CIGS Based Solar Cells

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Enhancing the efficiency of CIGS thin film solar cells by inserting novel back surface field (SnS) layer

Cited by 11 publications

References 10 publications

Enhancement of efficiency in CsSnI3 based perovskite solar cell by numerical modeling of graphene oxide as HTL and ZnMgO as ETL

Enhancement of efficiency in CsSnI3 based perovskite solar cell by numerical modeling of graphene oxide as HTL and ZnMgO as ETL

Highly improvement in efficiency of Cu(In,Ga)Se2 thin film solar cells

Theoretical Investigation on Performance Enhancement of CIGS Based Solar Cells

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Highly improvement in efficiency of Cu(In,Ga)Se₂ thin film solar cells