Enhancing radiation-resistance of amorphous indium–zinc-oxide thin-film transistors by group IV transition element doping

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Enhancing radiation-resistance of amorphous indium–zinc-oxide thin-film transistors by group IV transition element doping

Abstract: The effect of doping with three different group IV metal cations, specifically Ti4+, Zr4+, and Hf4+, on the stability of indium-zinc-oxide (InZnO) thin-film transistors (TFTs) against 5 MeV proton radiation...

Cited by 6 publications

References 56 publications

Boosted growth rate using discrete reactant feeding method and novel precursor of indium oxide by atomic layer deposition

Boosted growth rate using discrete reactant feeding method and novel precursor of indium oxide by atomic layer deposition

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Investigation of low to high-dose gamma-ray (γ-ray) radiation effects on indium-zinc-oxide (IZO) thin film transistor (TFT)

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