Enhancing Performance of GaN/Ga2O3 P‐N Junction Uvc Photodetectors via Interdigitated Structure
Ziling Cai,
Xiyao He,
Kaikai Wang
et al.
Abstract:Ga2O3‐based Ultraviolet‐C photodetector (UVCPD) is considered the most promising UVCPD at present and is divided into Metal‐Semiconductor‐Metal (MSM) and PN junction types. Compared with MSM‐PDs, PN‐PDs exhibit superior transient performance due to the built‐in electric field. However, current Ga2O3‐based PN‐PDs lack consideration for carrier collection and electric field distribution. In this study, PN‐PDs with an interdigital n‐Ga2O3 layer and finger electrodes are fabricated on p‐GaN/n‐Ga2O3 epilayers. Ultr… Show more
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