Enhancement of thermoelectric performance in n-type PbTe1−Se  by doping Cr and tuning Te:Se ratio

Chere, Eyob Kebede; Zhang, Qian; McEnaney, Kenneth; Yao, Meng; Cao, Feng; Sun, Jingying; Chen, Shuo; Opeil, Cyril; Chen, Gang; Ren, Zhifeng

doi:10.1016/j.nanoen.2015.02.026

Cited by 36 publications

(16 citation statements)

References 38 publications

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“…Pb 0.99 Cr 0.01 Te 0.25 Se 0.75 (previous work with high (ZT) eng )30 and Pb 0.98 In 0.02 Te 0.8 S 0.2 are higher than others with T h up to 773 K. It clearly shows that increase of (ZT) eng is more important than achieving high peak ZT. An (ZT) eng of ~0.7 and the efficiency of ~12% can be achieved for Pb 0.98 In 0.02 Te 0.8 S 0.2 with T h at 773 K and T c at 323 K.CONCLUSIONSPbS was incorporated into In-doped PbTe to increase the electrical conductivity by band modification and to decrease the thermal conductivity by alloy scattering and Spinodal decomposition.…”

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confidence: 70%

“…Several recent studies show gradual progress on the improvement of the ZT below 200 o C, such as by combination of nanostructures and complex band structure, 27 alloying PbTe with MgTe to stabilize the optimal carrier concentration in a large temperature range, 28 and doping with Cr to effectively enhance the room temperature power factor and ZT. 29,30 It has been predicted that deep defect states in narrow band-gap semiconductors could lead to the enhancement of the TE properties by annihilating the minority carriers, which helps to keep the Seebeck coefficient high and the thermal conductivity low at higher temperatures. [31][32][33][34][35][36][37] Normally, the carrier concentration was optimized to achieve high peak ZT at higher temperature.…”

Section: Introductionmentioning

confidence: 99%

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High thermoelectric performance of n-type PbTe1−S due to deep lying states induced by indium doping and spinodal decomposition

et al. 2016

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Good thermoelectric materials should have high engineering figure-of-merit (ZT) eng , not peak ZT, to achieve high conversion efficiency. In this work, we achieved a good (ZT) eng by optimizing the carrier concentration to improve the room temperature ZT using deep lying dopant, indium, in PbTe 1-y S y. It was found that a room temperature ZT as high as ~0.5 and a peak ZT ~1.1 at about 673 K were obtained in Pb 0.98 In 0.02 Te 0.8 S 0.2 due to a lower thermal conductivity by alloy scattering and Spinodal decomposition. The calculated efficiency could be as high as ~12% at cold side 323 K and hot side 773 K. The approach is expected to work in other materials systems too.

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confidence: 70%

Section: Introductionmentioning

confidence: 99%

High thermoelectric performance of n-type PbTe1−S due to deep lying states induced by indium doping and spinodal decomposition

et al. 2016

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“…Due to the stabilization of the optimal carrier concentration, an increase in average ZT was also achieved in Na‐doped Pb 0.97 Mg 0.03 Te (300–750 K) . Cr was recently found effective to increase the average ZT s of PbSe and PbTe 1‐ x Se x (300–873 K). HgTe was recently used to enhance the low average ZT of SnTe (300–873 K) .…”

Section: Resultsmentioning

confidence: 99%

Studies on Thermoelectric Properties of n‐type Polycrystalline SnSe_1‐xS_x by Iodine Doping

Zhang

Chere

Sun

et al. 2015

Advanced Energy Materials

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We prepared iodine-doped n-type SnSe polycrystalline by melting and hot pressing. The prepared material is anisotropic with a peak ZT of ~0.8 at about 773 K measured along the hot pressing direction. This is the first report on TE properties of n-type Sn chalcogenide alloys.With increasing content of iodine, the carrier concentration changed from 2.3×10 17 cm -3 (p-type)to 5.0×10 15 cm -3 (n-type) then to 2.0×10 17 cm -3 (n-type). The decent ZT is mainly attributed to the intrinsically low thermal conductivity due to the high anharmonicity of the chemical bonds like those in p-type SnSe. By alloying with 10 atm. % SnS, even lower thermal conductivity and an enhanced Seebeck coefficient were achieved, leading to an increased ZT of ~1.0 at about 773 K measured also along the hot pressing direction.

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“…At last, a discussion of future possible strategies is proposed to aim at further enhancing the thermoelectric performance in PbTe-based materials. PbTe-Ge:Na, 101 (2) PbTe:(Na, Bi), 102 (3) PbTe-Sn:(Ag, Sb), 103 (4) PbTe-Mn:Na, 104 (5) PbTe-Se:K, 105 (6) PbTe-Ca:Na, 91 (7) PbTe-Cd:Na, 92 (8) PbTe-S:K, 61 (9) PbTe:Na, 106 (10) PbTe:Na (Nano-precipitates), 107 (11) PbTe-Ge, 108 (12) PbTe-Se-S:Na, 109 (13) PbTe-Hg: Na, 110 (14) PbTe:Tl, 64 (15) PbTe-Sn-Se-S: Na, 95 (16) PbTe-Yb:Na, 111 (17) PbTe-Se:Na, 62 (18) PbTe-Mn-Sr:Na, 112 (19) PbTe-Mg:Na, 60 (20) PbTe-Eu:Na, 113 (21) PbTe-Sr:Na, 59 (22) PbTe-S:Na, 63 (23) PbTe-Sr:Na (Non-equilibrium); 53 d peak ZT values as a function of optimized carrier density in n-type PbTe systems: (1) PbTe-Se:Cr, 114 (2) PbTe-Se-S:I, 115 (3) PbTe-NaCl, 116 (4) PbTe-Zn:I, 117 (5) PbTe-Cd:I, 118 (6) PbTe-Sn-Se:I, 119 (7) PbTe-Mg:I, 120 (8) PbTe-Se-S:Cl, 121 (9) PbTe:Cd, …”

Section: Introductionmentioning

confidence: 99%

Charge and phonon transport in PbTe-based thermoelectric materials

2018

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PbTe is a typical intermediate-temperature thermoelectric material, which has undergone extensive developments and achieved excellent high thermoelectric performance. In this perspective we summarized several strategies that were successfully applied in PbTe-based thermoelectric materials through manipulating charge and phonon transports, such as optimizing carrier density to tune Fermi level, tailoring band structure to enhance effective mass, and designing all-scale hierarchical architectures to suppress phonon propagation. Meanwhile, due to the different features of conduction and valence bands, we separately introduced the approaches to enhance performance of p-type and n-type PbTe. In p-type PbTe, the strategies of band convergence, band alignment and density of state (DOS) distortion are more effective to achieve high electrical transport properties. By contrast, flattening conduction bands and introducing deep impurity level are more suitable for n-type PbTe. Lastly, several potential strategies were proposed to further improve the thermoelectric performance of PbTe-based materials, which might be extended to other thermoelectric systems.

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Enhancement of thermoelectric performance in n-type PbTe1−Se by doping Cr and tuning Te:Se ratio

Abstract: Lead telluride and its alloys have been extensively studied for medium temperature thermoelectric applications due to decent figure-of-merit (ZT) at temperature close to 900 K. However, little emphasis has been given to improve the ZT near room temperature.

Cited by 36 publications

References 38 publications

High thermoelectric performance of n-type PbTe1−S due to deep lying states induced by indium doping and spinodal decomposition

High thermoelectric performance of n-type PbTe1−S due to deep lying states induced by indium doping and spinodal decomposition

Studies on Thermoelectric Properties of n‐type Polycrystalline SnSe_1‐xS_x by Iodine Doping

Charge and phonon transport in PbTe-based thermoelectric materials

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Enhancement of thermoelectric performance in n-type PbTe1−Se by doping Cr and tuning Te:Se ratio

Abstract: Lead telluride and its alloys have been extensively studied for medium temperature thermoelectric applications due to decent figure-of-merit (ZT) at temperature close to 900 K. However, little emphasis has been given to improve the ZT near room temperature.

Cited by 36 publications

References 38 publications

High thermoelectric performance of n-type PbTe1−S due to deep lying states induced by indium doping and spinodal decomposition

High thermoelectric performance of n-type PbTe1−S due to deep lying states induced by indium doping and spinodal decomposition

Studies on Thermoelectric Properties of n‐type Polycrystalline SnSe1‐xSx by Iodine Doping

Charge and phonon transport in PbTe-based thermoelectric materials

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Studies on Thermoelectric Properties of n‐type Polycrystalline SnSe_1‐xS_x by Iodine Doping