2016
DOI: 10.1103/physrevapplied.5.014009
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Abstract: We show that the use of sub-nm adhesion layers significantly enhances the thermal interface conductance at metal-dielectric interfaces. A metal-dielectric interface between Au and sapphire (Al 2 O 3 ) was considered using Cu (low optical loss) and Cr (high optical loss) as adhesion layers. To enable high throughput measurements each adhesion layer was deposited as a wedge such that a continuous range of thickness could be sampled. Our measurements of thermal interface conductance at the metal-Al 2 O 3 interfac… Show more

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Cited by 57 publications
(73 citation statements)
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References 53 publications
(25 reference statements)
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“…For example, in the field of 3D integration, device stacking leads to a high density of material interfaces, each of which can contribute a significant resistance to heat transfer [1]. In devices where these are metal-semiconductor or metal-dielectric interfaces, thermal transport is primarily a function of phonon transmission because the free electron density is low on the dielectric (or semiconductor) side of the interface [2][3][4] . Jeong, et al showed that the insertion of metal adhesion layers which have a higher phonon density of states overlap with the dielectric than the overlayer metal's overlap, significantly enhance thermal interface conductance (G) between the metal and dielectric [2,5,6].…”
Section: Introductionmentioning
confidence: 99%
“…For example, in the field of 3D integration, device stacking leads to a high density of material interfaces, each of which can contribute a significant resistance to heat transfer [1]. In devices where these are metal-semiconductor or metal-dielectric interfaces, thermal transport is primarily a function of phonon transmission because the free electron density is low on the dielectric (or semiconductor) side of the interface [2][3][4] . Jeong, et al showed that the insertion of metal adhesion layers which have a higher phonon density of states overlap with the dielectric than the overlayer metal's overlap, significantly enhance thermal interface conductance (G) between the metal and dielectric [2,5,6].…”
Section: Introductionmentioning
confidence: 99%
“…Majumdar et al measured the thermal conductance of self-assembled monolayer junctions formed between metal leads (Au, Ag, Pt, and Pd) [47]. Jeong et al measured the interfacial thermal conductance across Au and Al 2 O 3 interface with adhesion Cu and Cr metal layers by using FDTR method and found that Cu layer and Cr layer can improve the interfacial thermal conductance by a factor of 2 or 4 than that of the pure Au/Al 2 O 3interface[48].…”
mentioning
confidence: 99%
“…For instance, while many simulations predict an enhancement of thermal conductance when a thin layer is inserted at a well bonded interface [7][8][9][10][11][12][13], only one experiment backs up that prediction so far [14]. Other experiments reporting conductance enhancement attribute the increase to a strengthening of the bonds at the boundaries [15][16][17]. Thermal interface engineering can be critical to many technologies like integrated circuits [3], phase change memory [18] or high power electronics [19].…”
Section: Introductionmentioning
confidence: 99%