Enhancement of the activation energy in coupled CdTe/ZnTe quantum dots and quantum-well structures with a ZnTe thin separation barrier

Abstract

Temperature-dependent photoluminescence measurements showed that the activation energy of CdTe/ZnTe quantum dots (QDs) coupled with a quantum well is much larger than that of the QDs alone, This behavior is attributed to the tunneling of carriers via a thin separation layer from the quantum well to the QDs. The present observations can help improve understanding of the enhancement of the activation energy in coupled CdTe/ZnTe nanostructures.

Clusters of II−VI Materials: CdiXi, X = S, Se, Te, i ≤ 16

“…As a matter of fact, experimental studies on nanoparticles of 2−6 nm in diameter are becoming routine work. , The case of II−VI nanoparticles is not an exception. Binary compounds such as ZnO , and ZnS, , CdS, − CdSe, − and CdTe ,, and ternary compounds such as CdS/ZnS, CdSe/ZnSe, , CdTe/ZnTe, and CdSe/CdTe have recently been studied. These nanoparticles are grown in solution, where organic molecules surround the nanoparticle to stop its growth.…”

Exciton Photoluminescence from CdTe/ZnTe Single Quantum Wells Grown by Hot Wall Epitaxy

“…Some research groups have already reported observations of the photoluminescence (PL) from self-organized QDs of CdTe on ZnTe. [1][2][3][4][5] These QDs have been observed as dotlike islands by surface measurement. Kuroda et al observed a PL peak from the QDs grown by atomic layer epitaxy (ALE) at a substrate temperature of 300 C in a molecular beam epitaxy (MBE) chamber.…”

Effect of ZnTe buffer layer on the structural and optical properties of CdTe/ZnTe quantum dots

“…However, relatively little work has been performed on II-VI QDs in comparison with III-V QDs because of the delicate problems encountered in the growth process. Among these II-VI QDs, wide-gap CdTe QDs, because of their advantages of higher excitonic binding energies, are of great interest due to their potential applications in optoelectronic devices operating in the green spectral range [12,13]. The control of the QDs size, shape, and size distribution is of great interest for the fabrication of QDs devices and investigation of their physical properties.…”