2020
DOI: 10.1016/j.mseb.2020.114745
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Enhancement of optical and thermoelectric properties in dysprosium doped ZnO thin films as an impact of non-parabolic band structure

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Cited by 17 publications
(6 citation statements)
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“…Moreover, using the van der Pauw method, the electrical conductivity of 1.2 × 10 4 and 5.6 × 10 2 S/m for the ZnO and SnO x films was determined, which results in a power factor of 180 ± 0.6 and 37 ± 2.8 μW/m K 2 , respectively. Our ZnO power factor is higher than other ones reported for dense ZnO films, for example <35 μW/m K 2 for undoped and Dy-doped ZnO films and ∼9 μW/m K 2 for nanowire-structured ZnO films (∼200 nm thick) . Moreover, our ZnO film shows a similar power factor at 298 K when compared with Al 2 O 3 /ZnO superlattices reported by Park et al .…”
Section: Resultssupporting
confidence: 53%
“…Moreover, using the van der Pauw method, the electrical conductivity of 1.2 × 10 4 and 5.6 × 10 2 S/m for the ZnO and SnO x films was determined, which results in a power factor of 180 ± 0.6 and 37 ± 2.8 μW/m K 2 , respectively. Our ZnO power factor is higher than other ones reported for dense ZnO films, for example <35 μW/m K 2 for undoped and Dy-doped ZnO films and ∼9 μW/m K 2 for nanowire-structured ZnO films (∼200 nm thick) . Moreover, our ZnO film shows a similar power factor at 298 K when compared with Al 2 O 3 /ZnO superlattices reported by Park et al .…”
Section: Resultssupporting
confidence: 53%
“…In addition, La doping introduced the band flattening effect, which showed an extremely high conductivity value of 33.131 Sm −1 and power factor 1156 µWm −1 K −2 for Cu 3 Sb 0.92 Sn 0.02 La 0.06 Se 4 at 623 K as shown in [311]. Band flattening is one of the key factors for inducing non-parabolic features in band structures and is caused by the larger effective mass across the conduction band edge [312]. The defects created by the Ge vacancies showed an enhanced zT value of 1.62 for Ge 0.8 Pb 0.1 Bi 0.1 Te 1.06 because of the combined effect from band convergence and suppressed bipolar effect [313].…”
Section: Electronic Structure/ Band Engineering (Band Convergence Val...mentioning
confidence: 99%
“…Ideal TE materials should possess high S and 𝜎 but low k. Nevertheless, S, 𝜎, and k are not independent, which are correlated with carrier concentration, carrier mobility, and band structure. [25] For the majority of TE materials, 𝜎 and k are positively correlated whereas S and 𝜎 are inversely correlated. The maximum zT can be achieved by the trade-off between S, 𝜎, and k. [26]…”
Section: Thermoelectric Figure Of Meritmentioning
confidence: 99%