Enhancement of Johnson figure of merit in III‐V HEMT combined with discrete field plate and AlGaN blocking layer

Fletcher, A.S. Augustine; Nirmal, D.; Arivazhagan, L.; Ajayan, J.; Varghese, Arathy

doi:10.1002/mmce.22040

Cited by 21 publications

(12 citation statements)

References 18 publications

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“…Figure10shows the comparison of J-FOM (= fT × BVgd) as a function of the gate length for various GaN-based HEMTs[20,21,[29][30][31][32][33][34][35][36][37][38][39][40][41][42][43]. The MIS-HEMTs that were fabricated in this study exhibited the J-FOM in the range between 5.57 and 10.67 THz•V, which are the state-of-the-art values reported for GaN-based HEMTs.…”

mentioning

confidence: 71%

“…Therefore, the trade-off relationship must be carefully considered while employing the recessed MIS gate structure. In this study, we have investigated the effects of the gate recess depth on the DC and RF characteristics of recessed AlGaN/GaN MIS-HEMTs with an aluminum oxynitride (AlOxNy) MIS gate; the performance was evaluated using Johnson's figure of merit (J-FOM = fT × BVgd), which is the norm for evaluating high-frequency power transistors [20,21]. AlOxNy films can be deposited while using various deposition techniques, among which plasma enhanced atomic layer deposition (PEALD) is a good choice for producing high quality thin films [22].…”

Section: Experimental Methodsmentioning

confidence: 99%

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Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

et al. 2020

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This study investigated the effects of a thin aluminum oxynitride (AlOxNy) gate insulator on the electrical characteristics of AlGaN/GaN-on-SiC metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). The fabricated AlGaN/GaN-on-SiC MIS-HEMTs exhibited a significant reduction in gate leakage and off-state drain currents in comparison with the conventional Schottky-gate HEMTs, thus enhancing the breakdown voltage. The effects of gate recess were also investigated while using recessed MIS-HEMT configuration. The Johnson’s figures of merit (= fT × BVgd) for the fabricated MIS-HEMTs were found to be in the range of 5.57 to 10.76 THz·V, which is the state-of-the-art values for GaN-based HEMTs without a field plate. Various characterization methods were used to investigate the quality of the MIS and the recessed MIS interface.

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confidence: 71%

Section: Experimental Methodsmentioning

confidence: 99%

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

et al. 2020

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“…Recently, many articles have been devoted to HEMT structure design improved by the introduction of AlGaN back barrier (BB) layer [9][10][11][12][13][14][15]. AlGaN has been used as a buffer layer of HEMT structures for a long time, especially for growth on Si substrates.…”

Section: Introductionmentioning

confidence: 99%

“…However, traps in high-resistivity GaN negatively influence the frequency characteristics of HEMT structures, since trapping and releasing electrons by deep traps is a rather slow process which decreases the cutoff frequency. Recently, AlGaN BB was suggested to separate electrons in two dimensional electron gas (2DEG) from traps in buffer layers and improve transistor characteristics, such as increased I on /I off ratio and suppressed leakage current [9], enhanced power performance [10], increased drain current (700 mA mm −1 ), improved transconductance (143 mS mm −1 ), suppressed current collapse (12%) [11] or in complex, increased Johnson figure of merit [12]. AlGaN BB also helps to improve the short-channel problem when InAlN barrier is used [13].…”

Section: Introductionmentioning

confidence: 99%

Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design

Hájek¹,

Hospodková²,

Hubı́k³

et al. 2021

Semicond. Sci. Technol.

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The influence of dislocation density on the transport properties of high electron mobility transistor (HEMT) structures is reported in this work. Experimental results, obtained on HEMT structures prepared in the same growth run on templates with different dislocation densities, are compared. However, the direct comparison of structures is complicated, since parallel parasitic currents through deeper parts of the heterostructure were observed in samples with lower dislocation density. To suppress this phenomenon, the addition of an AlGaN back barrier (BB) beneath the two dimensional electron gas (2DEG) channel is proposed and optimized and the most suitable design based on both modeling and experimental results is suggested. Subsequently, the comparison of electron mobility in 2DEG for structures with AlGaN BB and different dislocation densities was possible. We show experimentally that lowering the dislocation density considerably increases the electron mobility in 2DEG. It is shown that the dislocation density also has a significant influence on the Fermi level position in GaN. The presented results suggest that reduction of dislocation density can improve the performance of high-frequency GaN HEMT applications.

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“…This can operate at extremely high frequencies, and has high breakdown efficiency with high saturation velocity of electrons 1‐3 . The GaN devices exhibit predominant power operation in relation to the more established GaAs‐based HEMT and became the innovation of choice for current and future utilizations 4‐6 . For any type of technique, radio points of interest have standards of response to be achieved with two interfering frequency domain signals spaced out that their third‐order intermodulation distortion (IMD 3 ) may come down on peak of the relevant signal.…”

Section: Introductionmentioning

confidence: 99%

Experimental insight into the third‐order intercepts and nonlinear distortion of GaN HEMTs

Alim

Ali

Gaquière

2020

Int J RF Microw Comput Aided Eng

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This research is about investigating the third-order intercept point (TOI) and nonlinear distortion level (NDL) for two GaN HEMTs of different gate lengths with temperature and frequency. As a multi-biasing, input power, frequency and temperature-dependent term; the TOI point and as well as the nonlinear distortion level are particular figures merit relevant to the third-order intermodulation distortion (IMD 3) product. The primary results are the output

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Enhancement of Johnson figure of merit in III‐V HEMT combined with discrete field plate and AlGaN blocking layer

Cited by 21 publications

References 18 publications

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design

Experimental insight into the third‐order intercepts and nonlinear distortion of GaN HEMTs

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