volume 148, issue 1-3, P261-264 2008
DOI: 10.1016/j.mseb.2007.09.015
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Abstract: Fine-grained SiC was hot-pressed with Al, B, and C additives under 150 MPa at 1850 • C. The grains had an equiaxed shape and the average grain size was 360 nm in as-sintered SiC. Al was detected at grain boundaries of Al, B, C-doped SiC by using energy-dispersive X-ray spectroscopy. The uni-axial compression tests were performed at constant crosshead speed at 1772 • C in He. The strain rates of Al, B, C-doped SiC in the low-stress region were ∼1 order of magnitude faster than those of B, C-doped SiC. The stre…

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