Enhancement in electrical performance of indium gallium zinc oxide-based thin film transistors by low temperature thermal annealing

Jeon, Sang Jin; Chang, Jong Woong; Choi, Kwang Soo; Kar, Jyoti Prakash; Lee, Tae Il; Myoung, Jae Min

doi:10.1016/j.mssp.2011.02.012

Cited by 19 publications

(4 citation statements)

References 23 publications

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“…In this paper, we propose that the decrease in interface trap density originates from the rearrangement of particles in films after treatment and the mechanism by which treatment can influence the TFT characteristic. Superior performance compared to that of other reports [12,13] was achieved.…”

Section: Introductioncontrasting

confidence: 49%

Improvement in the performance of an InGaZnO thin-film transistor by controlling interface trap densities between the insulator and active layer

Trinh

Nguyen

Ryu

et al. 2011

Semicond. Sci. Technol.

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An amorphous InGaZnO film fabricated by radio frequency magnetron sputtering in only an Ar-reactive gas shows high conductivity, and a thin-film transistors (TFTs)-based IGZO active layer expresses a poor on/off current ratio with a high off current and high subthreshold swing (SS). This paper presents the post-annealing effects on IGZO thin films to compensate the oxygen deficiencies in films as well as on TFT devices to reduce the densities of the interface trap between the active layer and insulator. The ratio of oxygen vacancies over total of oxygen (O 2 /O tot ) in IGZO estimated by the XPS measurement shows that they significantly diminish from 24.75 to 17.68% when increasing the temperature treatment to 350 • C, which is related to the enhancement in resistivity of IGZO. The TFT characteristics of IGZO treated in air at 350 • C show a high I ON /I OFF ratio of ∼1.1 × 10 7 , a high field-effect mobility of 7.48 cm 2 V −1 s −1 , and a low SS of 0.41 V dec −1 . The objective of this paper is to achieve a successful reduction in the interface trap density, D it , which has been reduced about 3.1 × 10 12 cm −2 eV −1 and 2.0 × 10 12 cm −2 eV −1 for the 350 and 200 • C treatment samples compared with the as-deposited one. The resistivity of the IGZO films can be adjusted to the appropriate value that can be used for TFT applications by controlling the treatment temperature.

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Section: Introductioncontrasting

confidence: 49%

Improvement in the performance of an InGaZnO thin-film transistor by controlling interface trap densities between the insulator and active layer

Trinh

Nguyen

Ryu

et al. 2011

Semicond. Sci. Technol.

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“…Figures 2(a) and 2(c) demonstrate that the annealing process improves the TFT characteristics in terms of the subthreshold swing property, as has been reported. [16][17][18][19] In particular, the devices annealed at 300 C exhibit good transfer TFT characteristics at a drain voltage of 10 V, with a field-effect mobility of 7 cm 2 V À1 s À1 . The output curves exhibit good linearity in the low-drain-voltage region, which indicates that both Ti and Mo yield good ohmic contacts.…”

Section: Tft Characteristicsmentioning

confidence: 94%

Depth-Profiling Study on Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors by X-ray Photoelectron Spectroscopy

Iwamatsu

Takechi

Yahagi

et al. 2013

Jpn. J. Appl. Phys.

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We performed an X-ray photoelectron spectroscopy (XPS) depth-profiling study on the materials used in amorphous indium–gallium–zinc oxide thin-film transistors (a-IGZO TFTs) with Ti and Mo source/drain (S/D) electrodes. The XPS results suggested that there are some differences between the interface regions of Ti/a-IGZO and Mo/a-IGZO for different chemical states of the materials. The chemical states of the back-channel surfaces were also found to be different between the TFTs with Ti and Mo S/D electrodes. In addition, we fabricated indium–gallium–zinc–titanium oxide composite thin films by deposition using multitarget co-sputtering. The electronic structure of these films observed by XPS is similar to that of the Ti/a-IGZO interface region. The fabricated films were found to have a very low resistivity, much lower than that of an a-IGZO film using typical TFT fabrication processes.

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“…I n the past few decades, oxide semiconductors are emerging as one of the most promising alternatives for the next generation of TFTs, bringing the possibility of having fully transparent devices, low processing temperature, low cost, high performance and electrically stable properties [1][2][3]. However, TFTs made from these semiconductors require high operating voltages to put out usable drain current (Ids).…”

Section: Introductionmentioning

confidence: 99%

Solution-Processed Zirconium Oxide Gate Insulators for Top Gate and Low Operating Voltage Thin-Film Transistor

Gao

Zhang

2015

J. Display Technol.

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We report a solution-processed a top gate Indium-gallium-zinc oxide thin film transistors (IGZO TFTs) with high-k zirconium oxide (ZrOx) dielectric. Both the dielectrics and electrodes were fabricated by spin coating or screen printing. The ZrOx exhibits an amorphous structure and smooth enough to be used as a gate insulator for TFT. The TFT with maximum process temperature of 300 ºC had a saturation mobility of 0.2 cm 2 /V s, an on/off ratio of 10 3 , a threshold voltage of 0.3 V, and the subthreshold swing is 0.34 V/decade. Index Terms-Solution-processed，Zirconium oxide(ZrOx), Top gate, Thin film transistors (TFTs).1551-319X (c)

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Enhancement in electrical performance of indium gallium zinc oxide-based thin film transistors by low temperature thermal annealing

Cited by 19 publications

References 23 publications

Improvement in the performance of an InGaZnO thin-film transistor by controlling interface trap densities between the insulator and active layer

Improvement in the performance of an InGaZnO thin-film transistor by controlling interface trap densities between the insulator and active layer

Depth-Profiling Study on Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors by X-ray Photoelectron Spectroscopy

Solution-Processed Zirconium Oxide Gate Insulators for Top Gate and Low Operating Voltage Thin-Film Transistor

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