Enhanced thermoelectric figure-of-merit of p-type SiGe through TiO2 nanoinclusions and modulation doping of boron

Ahmad, Sajid; Basu, Ranita; Sarkar, Partha Sarathi; Singh, Ajay; Bohra, Anil; Bhattacharya, Shovit; Bhatt, Ranu; Meshram, K.N.; Samanta, Soumen; Bhatt, Pramod; Navaneethan, M.; Hayakawa, Y.; Debnath, A.K.; Gupta, S. K.; Aswal, D. K.; Muthe, K. P.; Gadkari, S. C.

doi:10.1016/j.mtla.2018.09.029

Cited by 20 publications

(13 citation statements)

References 35 publications

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“…Hence, the hybrid nanostructure provides a broader range of tunable MFP that can reduce thermal conductivity. [ 53,54 ] The κ of samples increases with the annealing time due to better crystallinity caused by prolonged annealing. Based on the aforementioned thermal conductivity data range, the 5 s UHA samples achieved excellent ZT values of 0.8 at room temperature, which is amongst the highest ever reported Si‐based thin film and nanowires, and the ZT comparison diagram is shown in Figure S7 in the Supporting Information.…”

Section: Discussionmentioning

confidence: 99%

Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region

Peng

Liu

et al. 2021

Advanced Energy Materials

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SiGe‐based thermoelectric (TE) materials are well‐known for high‐temperature utilization, but rarely relevant in the low temperature region. Here a Ge quantum dots (QDs) and Sn precipitation SiGeSn hybrid film are constructed via ultrafast high temperature annealing (UHA) of a treated P‐ion implantation SiGeSn film on Si/SiO2 substrate. Combining the modulation doping effect dominated by Sn precipitates and the energy filtering effect caused by Ge QDs, the optimized SiGe films achieve a giant power factor as high as 91 µW cm−1 K−2 @300 K, room temperature, while maintaining low thermal conductivity. This strategy on film construction provides a novel insight for TE materials with striking performance.

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Section: Discussionmentioning

confidence: 99%

Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region

Peng

Liu

et al. 2021

Advanced Energy Materials

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“…The maximum value obtained for the Seebeck coefficient at 973 K was −156 µV/K, with an electrical conductivity of ~4 × 10 4 S/m. Silicon-based materials, although not common in thermoelectricity, have also been shown to benefit from energy filtering [103][104][105][106][107][108][109][110]. For instance, heavily doped Si with B with nanoparticles of Si has shown an increased Seebeck coefficient and electrical conductivity in a particular range of dopant concentrations [111].…”

Section: Energy Filtering By Semiconducting Secondary Phasesmentioning

confidence: 99%

Recent Progress in Multiphase Thermoelectric Materials

Fortulan

Yamini

2021

Materials

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Thermoelectric materials, which directly convert thermal energy to electricity and vice versa, are considered a viable source of renewable energy. However, the enhancement of conversion efficiency in these materials is very challenging. Recently, multiphase thermoelectric materials have presented themselves as the most promising materials to achieve higher thermoelectric efficiencies than single-phase compounds. These materials provide higher degrees of freedom to design new compounds and adopt new approaches to enhance the electronic transport properties of thermoelectric materials. Here, we have summarised the current developments in multiphase thermoelectric materials, exploiting the beneficial effects of secondary phases, and reviewed the principal mechanisms explaining the enhanced conversion efficiency in these materials. This includes energy filtering, modulation doping, phonon scattering, and magnetic effects. This work assists researchers to design new high-performance thermoelectric materials by providing common concepts.

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“…High performance SiGe alloys depicting (A) its reduced κ t and (B) enhanced ZT via miscellaneous optimization techniques at different temperature range …”

Section: High Performance Inorganic Te Materialsmentioning

confidence: 99%

“…474 For example, Usenko et al prepared the n-type nanostructured SiGe bulk sample using the ball-milling and spark plasma sintering process. The sample provided a low κ t of 2.47 Wm −1 K −1 at room F I G U R E 2 0 High performance SiGe alloys depicting (A) its reduced κ t and (B) enhanced ZT via miscellaneous optimization techniques at different temperature range 450,458,[460][461][462][463][464][465][466][467][468][469][470][471][472][473] [Colour figure can be viewed at wileyonlinelibrary.com] temperature and provided ZT of ~1.1 at 1073 K. 466 Alternatively, p-type nanostructured SiGe has a low κ t but the main problem associated with this material is its low ZT value. Usenko et al prepared boron-doped nanostructured bulk Si 80 Ge 20 via a spark plasma technique and reported a low κ t and high ZT value around ~2.9 Wm −1 K −1 and 0.72 at 1073 K, respectively.…”

Section: Sige Alloysmentioning

confidence: 99%

Inorganic thermoelectric materials: A review

et al. 2020

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Summary Thermoelectric generator, which converts heat into electrical energy, has great potential to power portable devices. Nevertheless, the efficiency of a thermoelectric generator suffers due to inefficient thermoelectric material performance. In the last two decades, the performance of inorganic thermoelectric materials has been significantly advanced through rigorous efforts and novel techniques. In this review, major issues and recent advancements that are associated with the efficiency of inorganic thermoelectric materials are encapsulated. In addition, miscellaneous optimization strategies, such as band engineering, energy filtering, modulation doping, and low dimensional materials to improve the performance of inorganic thermoelectric materials are reported. The methodological reviews and analyses showed that all these techniques have significantly enhanced the Seebeck coefficient, electrical conductivity, and reduced the thermal conductivity, consequently, improved ZT value to 2.42, 2.6, and 1.85 for near‐room, medium, and high temperature inorganic thermoelectric material, respectively. Moreover, this review also focuses on the performance of silicon nanowires and their common fabrication techniques, which have the potential for thermoelectric power generation. Finally, the key outcomes along with future directions from this review are discussed at the end of this article.

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Enhanced thermoelectric figure-of-merit of p-type SiGe through TiO2 nanoinclusions and modulation doping of boron

Cited by 20 publications

References 35 publications

Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region

Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region

Recent Progress in Multiphase Thermoelectric Materials

Inorganic thermoelectric materials: A review

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