Enhanced optical transparency and electrical conductivity of Ba and Sb co-doped SnO2 thin films

Ramarajan, R.; Kovendhan, M.; Thangaraju, K.; Joseph, D. Paul; Babu, R. Ramesh; Elumalai, Viswanathan

doi:10.1016/j.jallcom.2020.153709

Cited by 41 publications

(12 citation statements)

References 52 publications

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“…Metal-oxide semiconductors have attracted considerable attention over the past few decades because of their high transparency [1][2][3][4], large area [5][6][7], and mass production [8], and compatibility with conventional device fabrication processes. Metal-oxide semiconductors contain a metal cation (i.e., Zn, Cu, and Ni) [9,10] and an oxide anion, including ternary metal oxides, such as IZO [11], and quaternary metal oxides, such as IGZO [12].…”

Section: Introductionmentioning

confidence: 99%

Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications

2022

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Thin−film transistors using metal oxides have been investigated extensively because of their high transparency, large area, and mass production of metal oxide semiconductors. Compatibility with conventional semiconductor processes, such as photolithography of the metal oxide offers the possibility to develop integrated circuits on a larger scale. In addition, combinations with other materials have enabled the development of sensor applications or neuromorphic devices in recent years. Here, this paper provides a timely overview of metal−oxide−based thin−film transistors focusing on emerging applications, including flexible/stretchable devices, integrated circuits, biosensors, and neuromorphic devices. This overview also revisits recent efforts on metal oxide−based thin−film transistors developed with high compatibility for integration to newly reported applications.

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Section: Introductionmentioning

confidence: 99%

Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications

2022

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“…This variation in peak position indicates the Sb substitution in the SnO 2 lattice is also controlled by the film thickness. 30 The addition of optimal amounts of Sb into the SnO 2 lattice also causes a small peak shift, since the ionic radii of Sb 5+ (0.64 Å) and Sn 4+ (0.69 Å) are nearly equal; 31 the peaks shift toward lower angle 2θ of 37.8°with an increase in the film thickness up to ATO2. Also, spray deposited ATO films phase shift is evident in the presence of structural defects influence in the sample.…”

Section: Structural Analysismentioning

confidence: 99%

Enhanced Sensing Performance of Sb-Doped Nanometer-Thin SnO₂ Films toward CO and NH₃ Gases

Ramanathan

Nagarajan

Bonu

et al. 2023

ACS Appl. Nano Mater.

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Thin film technology offered several possibilities and advancements in modern gas sensor devices. We have developed template-free, Sb-doped nanometer thin-SnO 2 films for CO/NH 3 gas detection using a facile spray technique on the glass substrates. Structural, surface, optical, and resistivity properties of as-deposited films were investigated as a function of film thickness for enhanced gas sensor performance. Structural analysis confirms tetragonal phase formation along with the texture behavior of the films. Increasing film thickness leads to an increase in the texture growth of the film, which can also impact gas sensing. As-deposited films display a polygon microstructure with dense film formation, leading to a large sensing surface. HR-TEM analysis confirms that Sb-doped nanometer-thin SnO 2 (ATO) films have a relatively low crystallite size than pristine TO films. Pristine SnO 2 (TO) film has better bandgap matching with bulk SnO 2 samples. ATO thin films have relatively lower band gap values and decrease as a function of film thickness due to enhanced free carrier density upon Sb doping. To determine the best optimum condition, gas sensing analysis was investigated at different operating temperatures (150, 200, and 250 °C) for different gas concentrations (5 to 25 ppm). Designed TO and ATO film base sensors exhibit rectifying gas-sensing behavior, indicating the formation of a potential barrier across the film surface and metal (Au) interface. ATO film-based gas sensor devices showed enhanced response toward CO/NH 3 gas detection compared to pristine TO thin film. Also, ATO thin films exhibited better stability and selectivity toward CO gas detection than NH 3 gas. However, the ATO film with very low resistance below 1 kΩ is not able to be used as a gas sensor. Hence, the results obtained indicate the optimum resistive behavior of nanometer ATO films' applicability toward enhanced CO/NH 3 gas detection.

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“…Babar et al reported similar results in spray-pyrolyzed undoped and Sb-doped SnO 2 thin films, and Ramarajan et al also obtained similar kind of results in spray-pyrolyzed Ba and Sb codoped thin films. [78,79] The PL emission intensity of the NFTO thin films increases with an increase in Nb concentration and shows a maximum for 4 wt% Nb (NFTO4); thereafter, it decreases for further increase in Nb concentration. Usually, oxygen vacancies are the most common defects that can be observed in the deposited NFTO thin films.…”

Section: Optical Propertiesmentioning

confidence: 99%

Anionic Fluorine and Cationic Niobium Codoped Tin Oxide Thin Films as Transparent Conducting Electrodes for Optoelectronic Applications

Muniramaiah

Reddy

Santhosh

et al. 2023

Physica Status Solidi (a)

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Exploration of alternatives for supplementing indium tin oxide electrode is currently trending due to scarcity of indium, leading to a steep increase in the cost of related optoelectronic components. Codoping of niobium (Nb) and fluorine (F) into SnO2 lattice as cationic and anionic dopants, respectively, is explored by spray deposition technique. A fixed 10 wt% F and varying Nb concentration from 0 to 5 wt% is incorporated into the SnO2 lattice. X‐ray diffraction reveals substitution of Nb and F into the SnO2 lattice without altering the structure. Optical transmittance is found to increase with Nb content up to 4% of Nb (77.59%), and it decreases thereafter. Scanning electron microscope and optical profiler imply a relatively smooth surface with sharp‐tipped particles which vary with Nb concentration. Sheet resistance decreases up to 3 wt% of Nb doping and increases thereafter. Contact angle measurement indicates that upon doping with Nb, the films turn hydrophilic. Among the deposited films, 4 wt% of Nb‐doped film shows the highest figure of merit of 5.01 × 10−3 Ω−1. The surface work function of the 4 wt% Nb‐doped SnO2 film is 4,687.85 meV. The optimal films are tested as electrodes in dye‐sensitized solar cells and are discussed in detail.

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Enhanced optical transparency and electrical conductivity of Ba and Sb co-doped SnO2 thin films

Cited by 41 publications

References 52 publications

Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications

Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications

Enhanced Sensing Performance of Sb-Doped Nanometer-Thin SnO₂ Films toward CO and NH₃ Gases

Anionic Fluorine and Cationic Niobium Codoped Tin Oxide Thin Films as Transparent Conducting Electrodes for Optoelectronic Applications

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Enhanced optical transparency and electrical conductivity of Ba and Sb co-doped SnO2 thin films

Cited by 41 publications

References 52 publications

Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications

Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications

Enhanced Sensing Performance of Sb-Doped Nanometer-Thin SnO2 Films toward CO and NH3 Gases

Anionic Fluorine and Cationic Niobium Codoped Tin Oxide Thin Films as Transparent Conducting Electrodes for Optoelectronic Applications

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Product

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Enhanced Sensing Performance of Sb-Doped Nanometer-Thin SnO₂ Films toward CO and NH₃ Gases