Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells

Abstract

Articles you may be interested inCarrier localization and in-situ annealing effect on quaternary Ga1−xInxAsySb1−y/GaAs quantum wells grown by Sb pre-deposition Appl. Phys. Lett. 102, 113101 (2013); 10.1063/1.4795866Much improved flat interfaces of In Ga As ∕ Al As Sb quantum well structures grown on ( 411 ) A InP substrates by molecular-beam epitaxya)Photoluminescence and photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular-beam epitaxy J. Appl. Phys. 95, 1050 (2004); 10.1063/1.1637936Optical properties of InGaAs/AlAsSb type I single quantum wells lattice matched to InP High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 lm were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5 meV. V C 2014 AIP Publishing LLC.

Synthesis and optoelectronic properties of quaternary GaInAsSb alloy nanosheets

“…The insert in figure 4(c) gives the Arrhenius plots of the integrated PL intensity versus inverse temperature, and a thermally activated process was observed with an activation energy of 134 meV. We demonstrate that the PL intensity dropping as the temperature increasing was probably due to the carriers tending to escape from the nanosheets, thus resulting in a higher activation energy barrier and a lower probability for photo-induced emission [26]. Based on the DFT, an accurate knowledge of conduction and valence bands topology enables the identification of alloy compositions, where carrier transition style and lifetime are likely to be found for specific bandgap and lattice parameters [14,49].…”

Effect of Rapid Thermal Annealing on the Emission Properties in InGaAsSb/AlGaAsSb Multiple Quantum Wells

“…The value of α between 1 and 2 is well known for exciton-like transition, whereas less than 1 indicates free-to-bound and donor-acceptor transitions. [37][38][39] From the abovementioned analysis, it is confirmed that P2 is an emission related to localized carriers. The localized carriers were confined by indium cluster located at the interface between the barriers and the wells in the QW structure, due to segregation of indium in an InGaAsSb layer during the growth of AlGaAsSb barrier layers.…”

PCSEL Performance of Type-I InGaAsSb Double-QWs Laser Structure Prepared by MBE

“…Although our device structure is quite similar to that previously reported in reference [14], we use this further for electrically pumped PCSEL fabrication. The key technique [20] by controlling the Group-V elements at interfaces is also opted to enhanced the optical properties in quaternary GaInAsSb/AlGaAsSb quantum wells in this manuscript. However, our previous work [14,20] only stopped at optically pumped PCSEL performance.…”

“…The key technique [20] by controlling the Group-V elements at interfaces is also opted to enhanced the optical properties in quaternary GaInAsSb/AlGaAsSb quantum wells in this manuscript. However, our previous work [14,20] only stopped at optically pumped PCSEL performance. The performance difference between this manuscript and our previous work is owing to the different conditions of our MBE system.…”