Enhanced light emission from a single quantum well located near a metal coated surface

Hecker, N. E.; Höpfel, R. A.; Sawaki, Nobuhiko

doi:10.1016/s1386-9477(98)00022-8

Cited by 33 publications

(26 citation statements)

References 4 publications

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“…This finding is very important since it shows that if one is to extract the power lost to the SPP modes of structures such as those considered here it is the SPP associated with the metal/organic interface upon which our attention should be focussed, not the SPP associated with the metal/air interface; it is this latter mode which has more frequently been investigated in the past. 15,16,19,20 We can extend the value of such calculations by integrating the area under each peak in the power dissipation spectrum. By so doing we can determine the power coupled to each mode as a fraction of the total power radiated by the emitter.…”

Section: ͑2͒mentioning

confidence: 99%

“…In the context of the work reported here the question of whether such enhanced transmission requires an array of holes or can be accomplished with just a periodically modulated film is of particular interest. 14 Several authors have explored the possibility of using periodically modulated metal films to extract light from surface plasmon polariton modes, [15][16][17][18][19][20] though only Gifford and Hall 6,21 have so far reported experimental results specifically to look at surface plasmon polariton cross coupling as a means of extracting light from such structures.…”

Section: Introductionmentioning

confidence: 99%

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Light emission through a corrugated metal film: The role of cross-coupled surface plasmon polaritons

et al. 2004

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We examine the phenomenon of light emission through a thin metal film that takes place via surface plasmon polaritons. Surface plasmon polariton cross coupling has recently been invoked to explain sharp features observed in the angle dependent emission spectra obtained from surface-emitting (through cathode) organic light-emitting diode structures. We investigated whether such a cross-coupling process is needed to explain such observations. We undertook measurements on samples for a variety of metal film thicknesses. Our results are consistent with the mechanism of surface plasmon polariton cross coupling but also show that the processes underlying the emission from such structures can be rather subtle.

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Section: ͑2͒mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Light emission through a corrugated metal film: The role of cross-coupled surface plasmon polaritons

et al. 2004

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“…3 Recently, we have reported a method for enhancing the light emission efficiency from InGaN QWs by controlling the energy transfer between QW emitters and surface plasmons ͑SPs͒. 4 The idea of SP enhanced light emission was previously described [5][6][7][8][9][10][11][12][13][14][15] and efficient SPenhanced visible light emission has been demonstrated. 4 Moreover, the enhancement of an emission rate is also very important for the development of communication technology and optical computing.…”

mentioning

confidence: 99%

Surface plasmon enhanced spontaneous emission rate of InGaN∕GaN quantum wells probed by time-resolved photoluminescence spectroscopy

Okamoto

Niki

Scherer

et al. 2005

Applied Physics Letters

358

248

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We observed a 32-fold increase in the spontaneous emission rate of InGaN/GaN quantum well ͑QW͒ at 440 nm by employing surface plasmons ͑SPs͒ probed by time-resolved photoluminescence spectroscopy. We explore this remarkable enhancement of the emission rates and intensities resulting from the efficient energy transfer from electron-hole pair recombination in the QW to electron vibrations of SPs at the metal-coated surface of the semiconductor heterostructure. This QW-SP coupling is expected to lead to a new class of super bright and high-speed light-emitting diodes ͑LEDs͒ that offer realistic alternatives to conventional fluorescent tubes. © 2005 American Institute of Physics. ͓DOI: 10.1063/1.2010602͔Currently, InGaN-GaN quantum well ͑QW͒ based lightemitting diodes ͑LEDs͒ have been developed and expected to eventually replace more traditional fluorescent tubes as illumination sources. 1,2 However, the emission efficacy of commercial white LEDs is still substantially lower than that of fluorescent tubes. 3 Recently, we have reported a method for enhancing the light emission efficiency from InGaN QWs by controlling the energy transfer between QW emitters and surface plasmons ͑SPs͒. 4 The idea of SP enhanced light emission was previously described 5-15 and efficient SPenhanced visible light emission has been demonstrated. 4 Moreover, the enhancement of an emission rate is also very important for the development of communication technology and optical computing. However, spontaneous emission rates of InGaN-GaN QWs are usually reduced by the carrier localization effect 16,17 and the quantum confinement Stark effect, 18,19 and very difficult to enhance. There are only a few reports on the enhancement of the emission rates by reducing the piezo-electric field 20 and making photonic crystal structure. 21 We believe that our developed SP coupling technique has the potential to enhance the spontaneous emission rate dramatically. 4 Since the density of states of SP mode is much larger, the QW-SP coupling rate should be very fast, and this new path of a recombination can increase the spontaneous emission rate. However, clear evidence for fast rate of QW-SP coupling has not so far been reported on the SP enhanced emission. We investigate the direct observation of SP coupled spontaneous emission rate by using the timeresolved photoluminescence ͑PL͒ measurements here. Moreover, we consider the mechanisms and dynamics of energy transfer and light extraction. This study should also be very useful for further optimization of the QW-SP coupling condition and for designing even more efficient device structures.InGaN-GaN QW wafers were grown on 0001 oriented sapphire substrates by metal-organic chemical vapor deposition ͑MOCVD͒. The grown structures consist of a GaN ͑4 m͒ buffer layer, an InGaN SQW ͑3 nm͒ followed by a GaN cap layer ͑10 nm͒. A 50 nm thick silver layer was then evaporated on top of the wafer surface. To perform timeresolved PL measurements, the frequency doubled output from a mode-locked Ti: Al 2 O 3 laser was used to...

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“…[13][14][15][16][17][18][19][20][21][22] The most important effect of the surface plasmons on luminescent ions is on their lifetime in the excited state which could contribute to improving the internal quantum efficiency of luminescent materials in the form of a slab or a layer. In this paper, we have studied how the change in the excited state lifetime of the radiating atoms could be described using the dispersion relations of the surface plasmons.…”

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confidence: 99%

Theory of Radiative Lifetime of an Activator Ion due to Surface Plasmons

Mishra

Collins

Piquette

2018

ECS J. Solid State Sci. Technol.

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We consider the lifetime of a phosphor layer situated near a metallic film. We first make general observations of the effect of the plasmons on the lifetime and quantum efficiency of the luminescent ions in the phosphor layer and on the role of the plasmons in the emission process. The effect of the plasmons in the excitation process and on the total luminescence from the system is also discussed. We then derive an expression for the lifetime of the optical ions interacting with the surface plasmon modes using the Einstein A and B coefficient formalism, which requires a determination of the mode density of the surface plasmons. Because the surface plasmons represent a 2-dimensional system, a length parameter must be introduced into the expression of the mode density. We derive this parameter using a semi-classical approach, and show its dependence on the dielectric constants of the system and on the distance from the metallic layer. Recently there has been considerable interest on utilizing surface plasmons in metallic thin films to enhance internal quantum efficiency of luminescent materials [1][2][3][4][5][6][7][8][9][10][11][12] and light emitting diodes (LED). 13-22The most important effect of the surface plasmons on luminescent ions is on their lifetime in the excited state which could contribute to improving the internal quantum efficiency of luminescent materials in the form of a slab or a layer. In this paper, we have studied how the change in the excited state lifetime of the radiating atoms could be described using the dispersion relations of the surface plasmons. The lifetime of an excited ion, τ as measured by the decay measurements consists of two components, radiative lifetime,τ R and nonradiative lifetime, τ N R the reciprocals of which are additive,The radiative lifetime of an ion depends on the transition moments of the ion, i.e., the matrix element of the electric dipole and quadrupole moments or magnetic moments between the excited and ground state wavefunctions of the radiating ions. Normally the radiative lifetime is a characteristic of the optical ion and does not change unless the wavefunctions of the optical ions are perturbed. On the other hand, nonradiative lifetime is associated with the relaxation of the excited state to phonons, lattice defects and impurities with a loss of the excited state energy. It is sometimes possible to increase the nonradiative lifetime by controlling the purity of the material, operating temperature, better material processing etc., thus decreasing the probability of nonradiative relaxation of the ion. From Eq. 1, it can be shown that when the nonradiative lifetime increases, the lifetime of the excited state increases. This increase in lifetime usually results in an increase of the internal quantum efficiency.If a new nonradiative pathway is opened, the nonradiative lifetime will decrease. It will not always decrease the internal quantum efficiency if the transferred energy is not completely lost as it is in the case of phonons. Such could be the case for s...

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Enhanced light emission from a single quantum well located near a metal coated surface

Cited by 33 publications

References 4 publications

Light emission through a corrugated metal film: The role of cross-coupled surface plasmon polaritons

Light emission through a corrugated metal film: The role of cross-coupled surface plasmon polaritons

Surface plasmon enhanced spontaneous emission rate of InGaN∕GaN quantum wells probed by time-resolved photoluminescence spectroscopy

Theory of Radiative Lifetime of an Activator Ion due to Surface Plasmons

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