2016
DOI: 10.1016/j.apsusc.2016.06.085
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Enhanced field emission from ZnO nanowire arrays utilizing MgO buffer between seed layer and silicon substrate

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Cited by 19 publications
(4 citation statements)
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“…ITO (tin-doped indium oxide) film not only has a high transmittance and conductivity, but also can perform the function of a buffer layer to prevent the infiltration of water vapor and oxygen, as well as reduce the residual stress and structural defects in the film. Furthermore, ITO layer as a photo-generated electron collecting layer can enhance photocatalytic activity, and affect electron transport the same as MgO buffer layer 16 17 . However, the properties of ITO films are unstable when it is immersed in a wide range of aggressive aqueous solutions and its performance are easily affected by the pH of the solution 18 .…”
mentioning
confidence: 99%
“…ITO (tin-doped indium oxide) film not only has a high transmittance and conductivity, but also can perform the function of a buffer layer to prevent the infiltration of water vapor and oxygen, as well as reduce the residual stress and structural defects in the film. Furthermore, ITO layer as a photo-generated electron collecting layer can enhance photocatalytic activity, and affect electron transport the same as MgO buffer layer 16 17 . However, the properties of ITO films are unstable when it is immersed in a wide range of aggressive aqueous solutions and its performance are easily affected by the pH of the solution 18 .…”
mentioning
confidence: 99%
“…As introduced above, the reduced back-contact resistance can improve the emission current stability. Moreover, the turn-on field can be reduced and the maximum field-emission current density can increase as in the work of S. Chen et al [ 49 ], which utilized an MgO buffer layer between the ZnO nanowires and substrate. Other work also utilized the band to band tunneling-induced thermo-enhancement between the ZnO nanowire and p-type Si to improve the field emission current [ 100 ].…”
Section: Field Emissionmentioning
confidence: 99%
“…Moreover, the morphology effect on different doping ZnO nanowires may also contribute to this variation. In the early works on the modification of back-contact resistance, thin film layers such as AZO [46] and MgO [49] have been investigated as the buffer layer between ZnO nanowires and the substrate. Apart from the improved electron supply, the buffer layer can also adjust the morphology of the nanowire.…”
Section: Doping and Back-contact Resistancementioning
confidence: 99%
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