Enhanced efficiency of graphene-silicon Schottky junction solar cells by doping with Au nanoparticles

Abstract

Articles you may be interested inNovel attributes in modeling and optimizing of the new graphene based InxGa1−xN Schottky barrier solar cells

Carbon/Silicon Heterojunction Solar Cells: State of the Art and Prospects

“…As discussed above, a tunable work function of the graphene could afford the opportunity of efficient carrier injection in graphene/Si solar cells. An effective way to modify the work function of graphene by p‐type chemical doping, such as acids, polymers, Au, Ag, boron, ionic liquid electrolytes, and so on, could lead to the performance improvement of solar cells. Chemical doping will increase not only the conductivity of graphene but also the built‐in field at the interface of graphene/Si.…”

Harnessing light energy with a planar transparent hybrid of graphene/single wall carbon nanotube/n-type silicon heterojunction solar cell

“…The high work function of hybrid film can result in enhancement of the built-in potential between hybrid and n-Si junction, therefore can improve V OC under illumination. At the same time, Au nanoparticles doping can increase the conductivity of the hybrid [32,33]. The high conductivity of gold-hybrid can provide more charge transport paths, resulting in improved cell PCE.…”

An analytical model for optimizing the performance of graphene based silicon Schottky barrier solar cells

“…Therefore, G/Si-SBSC has emerged as a promising candidate for high-performance and cost-effective photovoltaic applications. Furthermore, G/Si solar cells have potentials to deliver higher efficiencies through oxidating the Si surface and modifying graphene with using of chemical dopants such as bis(trifluoromethanesulfonyl)amide [14], SOCl 2 [15,16], HNO 3 [15][16][17] and 1-pyrenecarboxylic acid (PCA) and AuCl 3 [18], introducing Au nanoparticles onto the graphene [19], introducing a colloidal antireflection coating onto a G/Si solar cell [20], introducing a graphene oxide interlayer to engineer the G/Si interface [21], performing appropriate surface passivation [22] or introducing a polymer electron blocking layer [23].…”