Engineering of microfabricated ion traps and integration of advanced on-chip features

Romaszko, Zak David; Hong, Seok‐Jun; Siegele, Martin; Puddy, R; Lebrun-Gallagher, Foni R.; Weidt, Sebastian; Hensinger, W. K.

doi:10.1038/s42254-020-0182-8

Cited by 57 publications

(33 citation statements)

References 182 publications

(357 reference statements)

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“…First, the integration of photonics components, that requires stringent wafer flatness, has to be implemented below the multilayer metallization: this hampers waveguide realization and Authors to whom correspondence should be addressed: a) luca.guidoni@univ-paris-diderot.fr b) tancs@ntu.edu.sg thus degrades scalability. In addition, thick (~10 μm) dielectric layer formation and patterning necessitate nonstandard fabrication techniques, limiting the compatibility with large-scale foundry manufacturing 17 . Eventually, the multilayer metallization may increase the coupling parasitics 9 , resulting in high RF losses and subsequent heating of the device.…”

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confidence: 99%

TSV-integrated surface electrode ion trap for scalable quantum information processing

Zhao

Likforman

et al. 2021

Applied Physics Letters

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In this study, we report about the design, fabrication, and operation of a Cu-filled through-silicon via (TSV)-integrated ion trap. TSVs are placed directly underneath electrodes as vertical interconnections between an ion trap and a glass interposer, facilitating the arbitrary geometry design with increasing electrode numbers and evolving complexity. The integration of TSVs reduces the form factor of the ion trap by more than 80%, minimizing parasitic capacitance from 32 ± 2 to 3 ± 0.2 pF. A low RF dissipation is achieved in spite of the absence of the ground screening layer. The entire fabrication process is on a 12-in. wafer and compatible with the established CMOS back end process. We demonstrate the basic functionality of the trap by loading and laser-cooling single 88Sr+ ions. It is found that both the heating rate (17 quanta/ms for an axial frequency of 300 kHz) and lifetime (∼30 min) are comparable with traps of similar dimensions. This work pioneers the development of TSV-integrated ion traps, enriching the toolbox for scalable quantum computing.

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confidence: 99%

TSV-integrated surface electrode ion trap for scalable quantum information processing

Zhao

Likforman

et al. 2021

Applied Physics Letters

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“…By overlapping two 1D gases comprising different spin states, a spin-specific potential could be used to control interactions and the resulting spin-charge separation [30]. The microwave ACZ traps could also be used to realize spin-based quantum gates, in which entanglement between internal atomic spin states can be mediated by the spin-specific ACZ potential, as is pursued in the ion quantum computing community [31][32][33][34].…”

Section: Discussionmentioning

confidence: 99%

Microwave Atom Chip Design

Miyahira

Rotunno

et al. 2021

Atoms

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We present a toolbox of microstrip building blocks for microwave atom chips geared towards trapped atom interferometry. Transverse trapping potentials based on the AC Zeeman (ACZ) effect can be formed from the combined microwave magnetic near fields of a pair or a triplet of parallel microstrip transmission lines. Axial confinement can be provided by a microwave lattice (standing wave) along the microstrip traces. Microwave fields provide additional parameters for dynamically adjusting ACZ potentials: detuning of the applied frequency to select atomic transitions and local polarization controlled by the relative phase in multiple microwave currents. Multiple ACZ traps and potentials, operating at different frequencies, can be targeted to different spin states simultaneously, thus enabling spin-specific manipulation of atoms and spin-dependent trapped atom interferometry.

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“…More recently, the development of entangling operations in qubits encoded in trapped ions [3][4][5] has led to high fidelity quantum computation and simulations [6][7][8] In order to fully utilize the power of quantum computation and simulations, one needs quantum systems comprised of a large number of (quantum-error corrected) qubits. There has been a strong push to scale up the number of trapped ions by designing specific trap geometries for shuttling and reconfiguring ion crystals [9,10] or arrays of ion traps [11,12], and by potentially connecting them via quantum networks [13]. In order to trap largesized crystals, Penning traps, which utilize static electric and magnetic fields to trap charged particles [14,15], have been used for trapping planar crystals of several hundred ions and first quantum simulations have been carried out [16].…”

Section: Introductionmentioning

confidence: 99%

Controlling long ion strings for quantum simulation and precision measurements

Kranzl,

Joshi,

Maier

et al. 2021

Preprint

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Scaling a trapped-ion based quantum simulator to a large number of ions creates a fullycontrollable quantum system that becomes inaccessible to numerical methods. When highly anisotropic trapping potentials are used to confine the ions in the form of a long linear string, several challenges have to be overcome to achieve high-fidelity coherent control of a quantum system extending over hundreds of micrometers. In this paper, we describe a setup for carrying out many-ion quantum simulations including single-ion coherent control that we use for demonstrating entanglement in 50-ion strings. Furthermore, we present a set of experimental techniques probing ion-qubits by Ramsey and Carr-Purcell-Meiboom-Gill (CPMG) pulse sequences that enable detection (and compensation) of power-line-synchronous magnetic-field variations, measurement of path length fluctuations, and of the wavefronts of elliptical laser beams coupling to the ion string.

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Engineering of microfabricated ion traps and integration of advanced on-chip features

Abstract: 2020) Engineering of microfabricated ion traps and integration of advanced on-chip features. Nature Reviews Physics, 2. pp. 285-299.

Cited by 57 publications

References 182 publications

TSV-integrated surface electrode ion trap for scalable quantum information processing

TSV-integrated surface electrode ion trap for scalable quantum information processing

Microwave Atom Chip Design

Controlling long ion strings for quantum simulation and precision measurements

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