2021
DOI: 10.1016/j.jhazmat.2020.124705
|View full text |Cite
|
Sign up to set email alerts
|

Engineering BiVO4@Bi2S3 heterojunction by cosharing bismuth atoms toward boosted photocatalytic Cr(VI) reduction

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
12
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
7
1

Relationship

1
7

Authors

Journals

citations
Cited by 75 publications
(15 citation statements)
references
References 69 publications
0
12
0
Order By: Relevance
“…38 16,42 In addition, the signal of Bi 2 S 3 is also not discovered in Figure S1b, due to the too low reaction temperature to form the Bi 2 S 3 /BiVO 4 heterojunction by TAA. 43,44 With the introduction of CQDs, the fringe of CdIn 2 S 4 nanosheets turns fuzzy for the uniform distribution of CQDs in Figure 1d,g.…”
Section: Computational Detailsmentioning
confidence: 99%
“…38 16,42 In addition, the signal of Bi 2 S 3 is also not discovered in Figure S1b, due to the too low reaction temperature to form the Bi 2 S 3 /BiVO 4 heterojunction by TAA. 43,44 With the introduction of CQDs, the fringe of CdIn 2 S 4 nanosheets turns fuzzy for the uniform distribution of CQDs in Figure 1d,g.…”
Section: Computational Detailsmentioning
confidence: 99%
“…maximizing their photocatalytic efficiency, which has been confirmed by our previous study. [11] Therefore, it is urgently needed to design and synthesize hybrid semiconductor with proper energy level alignment and lower resistance of charge transfer across the interface, which will enhance the photocatalytic activity.…”
Section: Doi: 101002/ente202200362mentioning
confidence: 99%
“…The photogenerated electrons and holes pass the interface between these heteroid semiconductor would suffer a high carrier transport activation energy and prevent them from maximizing their photocatalytic efficiency, which has been confirmed by our previous study. [ 11 ] Therefore, it is urgently needed to design and synthesize hybrid semiconductor with proper energy level alignment and lower resistance of charge transfer across the interface, which will enhance the photocatalytic activity.…”
Section: Introductionmentioning
confidence: 99%
“…The first category is semiconductors whose band gap is higher than or approximately equal to the band gap of BiVO 4 , such as Bi 4 Ti 3 O 12 11 and g-C 3 N 4 . 12 The second category is semiconductors whose band gap is lower than that of BiVO 4 , such as In 2 S 3 , 13 Cu 2 O, 14 Bi 2 S 3 , 15 CuInS 2 , 16 and Ag 3 PO 4 . 17 Although the separation degree of photogenerated electrons and photogenerated holes can be improved after BiVO 4 is compounded with the first category of semiconductor material, the UV-vis absorption spectrum of the composite material usually shifts to the short wavelength direction or almost does not move toward the long wavelength direction, which is not conducive to the utilization of the visible region in sunlight.…”
Section: Introductionmentioning
confidence: 99%