MRS Proc. 2000 DOI: 10.1557/proc-610-b6.7 View full text
Hugo Saleh, Mark E. Law, Sushil Bharatan, Kevin S. Jones, Wish Krishnamoorthy, Temel Buyuklimanli

Abstract: AbstractBoron, a P-type dopant, experiences Transient Enhanced Diffusion (TED) via interstitials. The Boron TED and {311} dissolution rates are explored as a function of implant energy dependence. Silicon implants of 1014/cm2 at 20, 40, 80, and 160 keV were used to damage the surface of a wafer with an epitaxially grown boron marker layer. Samples were annealed at 750°C for 15 to 135 minutes and 800°C for 10 to 30 minutes to observe the diffusion exhibited by the marker layer and to correlate this with the dis…

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