Energetic stability, equilibrium geometry, and the electronic properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Ca</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Si</mml:mi><mml:mrow><mml:mo>(</mml:mo><mml:mn>111</mml:mn><mml:mo>)</mml:mo></mml:mrow></mml:mrow></mml:math>surfaces

Miwa, R. H.

doi:10.1103/physrevb.72.085325

Cited by 19 publications

(3 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The building block of this structure ͑i.e., the dimerized feature͒ clearly resembles dimerlike entities caused by the Siv Si and Gev Ge double bonds of the HCC structure in calculated empty state STM images. 6,10,15,24,32 In the case of Ge, similar features were also reported in measured empty state images for the Li/ Ge͑111͒͑3 ϫ 1͒ ͑Refs. 19 and 20͒ and more recently the Eu/ Ge͑111͒͑3 ϫ 2͒ ͑Ref.…”

Section: Resultssupporting

confidence: 77%

Stability, structural, and electronic properties of atomic chains onYb/Ge(111)3×2studied by STM and STS

et al. 2010

View full text Add to dashboard Cite

By means of scanning tunneling microscopy and spectroscopy ͑STM/STS͒, we have investigated the stability and the structure of atomic chains on Yb/ Ge͑111͒3 ϫ 2. STM allows the identification of different building blocks of this reconstruction, depending on the bias polarity and voltage, and validates the honeycomb chainchannel ͑HCC͒ structure with the Gev Ge double bond and metal coverage of 1/6 ML for Yb/ Ge͑111͒3 ϫ 2, in agreement with the recent photoemission study ͓Kuzmin et al., Phys. Rev. B 75, 165305 ͑2007͔͒. The Yb atoms are found to be adsorbed on similar sites in the well-defined ϫ2 rows. Locally, such rows are distorted, leading to the ϫ4 periodicity, where the Yb atoms are adsorbed on two different sites that are well consistent with T4 and H3 sites. It is also assumed that Yb atoms can fluctuate rapidly between the neighboring T4 and H3 sites, leading to continuous rows observed together with the ϫ2 rows in STM images. The stability of Ge honeycomb chain is controlled by the presence of Yb atom per two ͑3 ϫ 1͒ surface units in average, which results in the donation of one electron from Yb to the surface per ͑3 ϫ 1͒ unit. When this density is locally changed, the Ge honeycomb chain is found to be broken. The inner structure of the Ge honeycomb chain is visualized in STM and shows dimerized features without any apparent buckling. The STM observations also account for why the double periodicity is missing in the low-energy electron diffraction pattern from Yb/ Ge͑111͒3 ϫ 2. The local electronic structure of this reconstruction, namely the Yb rows and Ge honeycomb chains, is studied by STS. The results support the HCC structure with the Gev Ge double bond. It is believed that the present study elucidates the difference between the ͑3 ϫ 2͒ reconstructions of Yb and Eu on Ge͑111͒ and those of alkaline-earth and rare-earth metals on Si͑111͒.

show abstract

Section: Resultssupporting

confidence: 77%

Stability, structural, and electronic properties of atomic chains onYb/Ge(111)3×2studied by STM and STS

et al. 2010

View full text Add to dashboard Cite

show abstract

“…[1][2][3][4][5][6][7] In particular, adsorption of Mg atoms on silicon surfaces has attracted growing interest for the past few years because of the possible use of the growth of Mg 2 Si films on Si substrates, which is an important narrow band gap semiconductor with potential applications in optoelectronics. [1][2][3][4][5][6][7] In particular, adsorption of Mg atoms on silicon surfaces has attracted growing interest for the past few years because of the possible use of the growth of Mg 2 Si films on Si substrates, which is an important narrow band gap semiconductor with potential applications in optoelectronics.…”

Section: Introductionmentioning

confidence: 99%

Initial stages of Mg adsorption on the Si(111)-7×7 surface

Chen

Zhan

Zhou

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

Articles you may be interested inStrain effect on the adsorption, diffusion, and molecular dissociation of hydrogen on Mg (0001) surface First-principles calculations are performed to determine the configurations of adsorbed Mg atoms on the Si͑111͒-7 ϫ 7 surface. It is shown that Mg atoms prefer to occupy the higher coordination sites of the faulted half unit cell and that they may diffuse laterally to the nearby ones around the same Si center adatom by overcoming a low diffusion barrier of 0.1325 eV. These characteristics are attributed to weak interactions among Mg and nearby Si atoms. The initial adsorption processes of Mg atoms on the Si͑111͒-7 ϫ 7 surface are investigated by scanning tunneling microscopy imaging at room temperature. Three types of adsorption sites are identified, which, by comparing with theoretical simulations, are found to be associated with the adsorbed configurations of one, two, and three Mg atoms, respectively.

show abstract

“…Over the past decades, the adsorption of alkali and alkaline earth metals onto semiconductor surfaces has been intensively studied not only from a pure science perspective but also due to the many technological applications involving these adsorption processes [1][2][3][4][5][6][7]. Several studies have examined the formation of Mg silicide and Mg-induced superstructures on the Si(111)-7 × 7 surface using a range of experimental techniques, including low-energy electron diffraction (LEED), photoemission spectroscopy (PES), and scanning tunnelling microscopy (STM).…”

Section: Introductionmentioning

confidence: 99%

Room-temperature growth of Mg on Si(111): stepwise versus continuous deposition

Lee¹,

Lee²,

Kim³

et al. 2007

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

Using low-energy electron diffraction and scanning tunnelling microscopy, we studied the formation of Mg silicide and metallic Mg islands on a Si(111)-7 × 7 surface at room temperature as a function of Mg coverage. We found that the mechanism by which Mg islands grew on the Si(111)-7 × 7 surface, and the morphology of the islands that formed, depended on whether the Mg deposition was performed in a stepwise or continuous manner. When Mg was deposited in a stepwise manner, with 1 h between deposition events, an amorphous Mg silicide overlayer formed on the Si(111)-7 × 7 surface during the initial stage of deposition (up to 2.0 ML Mg coverage), as shown by the observation of δ7 × 7 and 1 × 1 low-energy electron diffraction patterns. Upon further stepwise Mg deposition, round-shaped Mg islands grew on the amorphous Mg silicide layer, as shown by scanning tunnelling microscopy and the emergence of a 1 × 1 low-energy electron diffraction pattern. If, on the other hand, the Mg was deposited continuously in a single step, hexagonal Mg islands formed on the flat Mg silicide layers, and a [Formula: see text] and 1 × 1 mixed phase was observed. Moreover, using scanning tunnelling spectroscopy, we confirmed the semiconducting and metallic nature of the Mg silicide layer and hexagonal Mg islands on the Si(111)-7 × 7 surface depending on their Mg coverage, respectively.

show abstract

Energetic stability, equilibrium geometry, and the electronic properties ofCa∕Si(111)surfaces

Cited by 19 publications

References 37 publications

Stability, structural, and electronic properties of atomic chains onYb/Ge(111)3×2studied by STM and STS

Stability, structural, and electronic properties of atomic chains onYb/Ge(111)3×2studied by STM and STS

Initial stages of Mg adsorption on the Si(111)-7×7 surface

Room-temperature growth of Mg on Si(111): stepwise versus continuous deposition

Contact Info

Product

Resources

About