Elimination of Te Inclusions in ${\rm Cd}_{1-x}{\rm Zn}_{x}{\rm Te}$ Crystals by Short-term Thermal Annealing

Fochuk, P.; Grill, R.; Kopach, O.; Bolotnikov, A. E.; Belas, E.; Bugár, M.; Camarda, G. S.; Chan, Wing; Cui, Yonggang; Hossain, Anwar; Kim, K. H.; Nakonechnyi, I.; Panchuk, O.; Yang, Ge; James, R. B.

doi:10.1109/tns.2012.2187069

Cited by 24 publications

(12 citation statements)

References 17 publications

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“…2c); only the surface remained covered with a straight-lined network (Fig. 3), similar to that described in [11]. Figure 4 shows the overall distribution of inclusions in CZT2, which was taken from the middle of the ingot.…”

Section: Annealing the Inclusionssupporting

confidence: 58%

“…The samples were cut out with a wire saw, and then polished successively with Al 2 O 3 abrasive powders down to 0.1-μm grit, and finally etched in either a Br 2 -methanol. Electrical measurements were acquired in an automated facility [11]; a DC voltage of 1-5 V and a constant magnetic field of 0.5 T were used for taking the Hall-effect measurements. An evacuated ampoule containing the sample was placed in a two-zone furnace inside the magnet.…”

Section: Methodsmentioning

confidence: 99%

“…One method suitable for growing such crystals is the highpressure Bridgman method (HPBM) [3,4]. Ingots, grown by HPBM, are of p-type conductivity, have a resistivity of 2×10 9 -5×10 11 Ohm×cm, and display good transport properties for detectors [3]. Indeed, Komar et al [5] improved these required properties by employing multi-zone furnaces to grow the crystals.…”

Section: Introductionmentioning

confidence: 99%

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High-temperature treatment of In-doped CZT crystals grown by the high-pressure Bridgman method

Fochuk

Nakonechnyi

Kopach

et al. 2012

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV

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We evaluated the effect of high-temperature treatment of Cd 0.9 Zn 0.1 Te:In single crystals using Hall-effect measurements, medium-and high-temperature annealing under various deviations from stoichiometry, and infra-red (IR) transmission microscopy Annealing at ~730 K sharply increased the electrical conductivity (by ~1-2 orders-of-magnitude). Plots of the temperature-and cadmium-pressure dependences of the electrical conductivity, carrier concentration, and mobility were obtained. Treating previously annealed Cd-samples under a Te overpressure at 1070 K allowed us to restore their resistance to its initial high values. The main difference in comparing this material with CdTe was its lowered electron density. We explained our results within the framework of Kröger's theory of quasi-chemical reactions between point defects in solids.

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Section: Annealing the Inclusionssupporting

confidence: 58%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High-temperature treatment of In-doped CZT crystals grown by the high-pressure Bridgman method

Fochuk

Nakonechnyi

Kopach

et al. 2012

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV

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“…2 which showed up to 96% size reduction of large inclusions in a 2D analysis). Annealing at this relatively low temperature and longer time reduces the generation of large quantity of irregular Cd inclusions reported for annealing at much higher temperatures above $1170 K [13]. Table 1 shows the size reductions for seven selected Te inclusions in CZT annealed at 510 1C for 60 h in Cd vapor.…”

Section: Thermal Annealing In CD Vapormentioning

confidence: 92%

“…While many of the small-size Te inclusions were eliminated after annealing in a Cd vapor at 923 K for 24 h, the larger inclusions remained; and the size-reduction for larger inclusions become possible in two cases: 1) annealing at higher temperature of 1100 K for a shorter time of 60 min, and 2) a two-cycle annealing at 1100 K for 15 min per cycle [12]. It has been reported that annealing under a Cd vapor pressure at high temperatures above $1170 K generates a large quantity of irregular Cd inclusions in the CZT matrix [13]. Thus, depending on the crystal composition and structure, annealing at lower temperatures and longer time could have the advantage of less heat stress on the CZT matrix compared to annealing at high temperatures.…”

Section: Introductionmentioning

confidence: 99%

Post-growth annealing of Bridgman-grown CdZnTe and CdMnTe crystals for room-temperature nuclear radiation detectors

Egarievwe

Yang

Egarievwe

et al. 2015

Nuclear Instruments and Methods in Physics Research Section A:

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a b s t r a c tBridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray-and gamma-raydetectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 1C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 1C in Cd vapor for 26 h, whilst their electrical resistivity fell by an order of 10 2 . During the temperature-gradient annealing of CMT at 730 1C and an 18 1C/cm temperature gradient for 18 h in a vacuum of 10 À 5 mbar, we observed the diffusion of Te from the sample, so causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 1C in a 10 1C/cm temperature gradient, we observed the migration of Te inclusions from a lowtemperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10 À 5 mbar at 570 1C and 30 1C/cm for 18 h, some Te inclusions moved toward the hightemperature side of the wafer, while other inclusions of the same size, i.e., 10 mm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT-and CMT-wafers are complex phenomena that depend on the conditions in local regions, such as composition and structure, as well as on the annealing conditions.

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The Influence of Constitutional Supercooling on the Distribution of Te-Particles in Melt-Grown CZT

Henager¹,

Alvine²,

Bliss³

et al. 2015

Journal of Elec Materi

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Elimination of Te Inclusions in ${\rm Cd}_{1-x}{\rm Zn}_{x}{\rm Te}$ Crystals by Short-term Thermal Annealing

Cited by 24 publications

References 17 publications

High-temperature treatment of In-doped CZT crystals grown by the high-pressure Bridgman method

High-temperature treatment of In-doped CZT crystals grown by the high-pressure Bridgman method

Post-growth annealing of Bridgman-grown CdZnTe and CdMnTe crystals for room-temperature nuclear radiation detectors

The Influence of Constitutional Supercooling on the Distribution of Te-Particles in Melt-Grown CZT

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