Electrostriction in Lead Lanthanum Zirconate‐Titanate Ceramics

Meng, Zhongyan; Kumar, Umesh

doi:10.1111/j.1151-2916.1985.tb10175.x

Cited by 38 publications

(7 citation statements)

References 8 publications

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“…, where and are the longitudinal and transverse polarization coefficients, respectively. Plotting versus , where is the inverse Young's modulus (elastic compliance), , the permittivity of free space, and the material dielectric constant, all examined dielectrics, from polymers [64][65][66] to relaxor ferroelectrics [59,[67][68][69] , were found to follow the empirical relationship (Figure 13): [59] (8)  which indicates a fundamental connection between these properties. This relationship was interpreted as evidence for significant anharmonicity in the lattice response to elastic and dielectric perturbation.…”

Section: ) =∑mentioning

confidence: 90%

Anelastic and Electromechanical Properties of Doped and Reduced Ceria

2018

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Room-temperature mechanical properties of thin films and ceramics of doped and undoped ceria are reviewed with an emphasis on the anelastic behavior of the material. Notably, the unrelaxed Young's modulus of Gd-doped ceria ceramics measured by ultrasonic pulse-echo techniques is >200 GPa, while the relaxed biaxial modulus, calculated from the stress/strain ratio of thin films, is ≈10 times smaller. Oxygen-deficient ceria exhibits a number of anelastic effects, such as hysteresis of the lattice parameter, strain-dependent Poisson's ratio, room-temperature creep, and nonclassical electrostriction. Methods of measuring these properties are discussed, as well as the applicability of Raman spectroscopy for evaluating strain in thin films of Gd-doped ceria. Special attention is paid to detection of the time dependence of anelastic effects. Both the practical advantages and disadvantages of anelasticity on the design and stability of microscopic devices dependent on ceria thin films are discussed, and methods of mitigating the latter are suggested, with the aim of providing a cautionary note for materials scientists and engineers designing devices containing thin films or bulk ceria, as well as providing data-based constraints for theoreticians who are involved in modeling of the unusual electrical and electromechanical properties of undoped and doped ceria.

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confidence: 90%

Anelastic and Electromechanical Properties of Doped and Reduced Ceria

2018

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“…Similar results have been documented in other relaxors, such as lead-free BNT-0.19BKT-xBZT 23 and lead lanthanum zirconate titanate (PLZT). 26,27 In relaxor ferroelectrics in general, a lower poling strain is expected whenever the electric field is ramped up more quickly, 27 since the PNRs do have less time to coalesce and develop a ferroelectric long range order.…”

Section: A Frequency Dependencementioning

confidence: 99%

Frequency and temperature dependence of actuating performance of Bi1/2Na1/2TiO3-BaTiO3 based relaxor/ferroelectric composites

Groh¹,

Jo²,

Rödel³

2014

Journal of Applied Physics

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“…4 7 )0 3 compositions were examined and found to show increasing polarization for increasing amounts of PZT added shifting Td to higher temperatures. The PLZT relaxors of the (X/65/35) series with X= 9,10,11 have been investigated for their dielectric, polarization, and electromechanical response (Meng et al, 1985; also see previous reports). Based upon the measured properties as summarized in Table 4, the PLZT type electrostrictors have features which distinguish them from the other types examined previously.…”

Section: Resultsmentioning

confidence: 99%