Electrostatic potential mapping at ferroelectric domain walls by low-temperature photoemission electron microscopy

Schaab, Jakob; Shapovalov, Konstantin; Schoenherr, Peggy; Hackl, Johanna; Khan, Muhammad Nadir; Hentschel, Mario; Yan, Z.; Bourret, Edith; Schneider, Claus M.; Nemšák, Slavomír; Stengel, Massimiliano; Cano, A.; Meier, Dennis

doi:10.1063/1.5117881

Cited by 6 publications

(4 citation statements)

References 32 publications

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“…The ultrahigh nanometer spatial resolution enables versatile research on the micro‐photophysics, for instance, SPP, plasmonic skyrmion, ferroelectric domain, and carrier transportation. [ 17,18,39–43 ] Further application can extend to the nanoscale observation of Moiré superlattice in twisted vdW material like s‐SNOM. [ 16 ] In this report, we extend the PEEM technique to disclose the light–matter interaction in a semiconductor microcavity under resonant photoexcitation.…”

Section: Discussionmentioning

confidence: 99%

Imaging and Controlling Photonic Modes in Perovskite Microcavities

Liu

et al. 2021

Advanced Materials

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Perovskite microcavities have excellent photophysical properties for integrated optoelectronic devices, such as nanolasers. Imaging and controlling the photonic modes within the cavity are fundamentally important to understand and develop applications. Here, photoemission electron microscopy (PEEM) is used to image the photonic modes within optical microcavities with a nanometer‐scale spatial resolution. From a CsPbBr3 microcavity, hybrid mode patterns are observed. Spatial frequency spectrum analysis on the patterns uncovers the characteristic cavity modes, which are modeled with transverse magnetic (TM) and transverse electric (TE) waves, and assigned to exciton–polariton modes. Based on this understanding, the light focus in a designed microcavity is imaged in real space and controlled by the light field polarization. The study confirms that the cavity modes in perovskites can be effectively observed by the PEEM technique under resonant excitation, which, in turn, promotes the design of optoelectronic devices based on perovskite microcavities.

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Section: Discussionmentioning

confidence: 99%

Imaging and Controlling Photonic Modes in Perovskite Microcavities

Liu

et al. 2021

Advanced Materials

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“…Improper ferroelectric domain walls in the hexagonal manganites have been extensively studied both experimentally [16,17,[19][20][21][22][23][24][63][64][65][66][67] and by DFT simulations [12,[20][21][22]37,[41][42][43][44], whereas for the hexagonal gallates (h-RGaO 3 ) only the charged domain walls have been assessed using DFT [41]. Concerning neutral domain walls, our calculations reveal that their atomic structures are directly comparable to YMnO 3 [12], as the wall formation is governed by the ionic nature of the Y-O bonds, and not the Mn-O or Ga-O bonds [38,40].…”

Section: Discussionmentioning

confidence: 99%

First-principles study of topologically protected vortices and ferroelectric domain walls in hexagonal YGaO3

et al. 2020

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Ferroelectric behavior on the meso-and macroscopic scale depends on the formation and dynamics of domains and controlling the domain patterns is imperative to device performance. While density functional theory (DFT) calculations have successfully described the basic properties of ferroelectric domain walls, the necessarily small cell sizes used for the calculations hampers DFT studies of complex domain patterns. Here, we simulate largescale complex ferroelectric domain patterns in ferroelectric YGaO 3 using multisite local orbitals as implemented in the DFT code CONQUEST. The multisite local orbital basis set gives similar bulk structural and electronic properties, and atomic domain wall structures and energetics as those obtained with conventional plane-wave DFT. With this basis set model, 3600-atom cells are used to simulate topologically protected vortices. The local atomic structure at the vortex cores is subtly different from the domain walls, with a lower electronic band gap suggesting enhanced local conductance at these cores.

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“…101 Differing from proper ferroelectrics, these charged walls are explicitly stable and persist even when their bound charges are not fully screened, representing a rare example of a stable, electronically uncompensated oxide interface. 166,167 While it is still possible to manipulate domain wall positions via, e.g., applied strain, 158 electric fields, 49,155,156,168 and annealing, [169][170][171] the biggest advantage lies in their stability, which allows using them as robust template for local property engineering. 172,173 Early studies have adopted strategies from semiconductor research changing, e.g., domain wall currents and the electronic domain wall width via aliovalent doping, demonstrating the general possibility to optimize and tailor the response at improper ferroelectric domain walls.…”

Section: Improper Ferroelectrics For Domain Wall Electronicsmentioning

confidence: 99%

Ferroelectric domain walls for nanotechnology

2021

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Ferroelectric domain walls have emerged as a new type of interface, where the dynamic characteristics of ferroelectricity introduce the element of spatial mobility, allowing for real-time adjustment of position, density and orientation of the walls. Because of electronic confinement, their distinct symmetry and chemical environment, the spatially mobile domain walls offer a wide range of functional electric and magnetic properties, representing excellent 2D components for the development of more agile next-generation nanotechnology. In this Review, we discuss how the field of domain wall nanoelectronics evolved from classical device ideas to advanced concepts for multilevel-resistance control in memristive and synaptic devices. Recent advances in modelling and atomic-scale characterization provide insight into the interaction of ferroelectric domain walls and point defects, offering additional routes for local property design. We also explore the discovery of functional domain walls in improper ferroelectrics and the intriguing possibility to develop the walls themselves into ultra-small electronic components, controlling electronic signals via their intrinsic physical properties. We conclude with a discussion of open experimental challenges and emergent domain wall phenomena that may play an important role for the future directions of the research.

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Electrostatic potential mapping at ferroelectric domain walls by low-temperature photoemission electron microscopy

Cited by 6 publications

References 32 publications

Imaging and Controlling Photonic Modes in Perovskite Microcavities

Imaging and Controlling Photonic Modes in Perovskite Microcavities

First-principles study of topologically protected vortices and ferroelectric domain walls in hexagonal YGaO3

Ferroelectric domain walls for nanotechnology

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