Electrooptical Properties of Heterostructure  (Pb, La)(Zr, Ti)O<sub>3</sub> Waveguides on Nb–SrTiO<sub>3</sub>

Nashimoto, Keiichi; Nakamura, S.; Morikawa, T.; Moriyama, Hiroaki; Watanabe, Minoru; Osakabe, Eisuke

doi:10.1143/jjap.38.5641

Cited by 40 publications

(23 citation statements)

References 12 publications

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“…13 In addition, substrate can effectively modify the structure of the ferroelectric thin films, 14,15 thus the EO properties. 13 In addition, substrate can effectively modify the structure of the ferroelectric thin films, 14,15 thus the EO properties.…”

Section: Introductionmentioning

confidence: 99%

Structural and electro-optic properties of Ba0.7Sr0.3TiO3 thin films grown on various substrates using pulsed laser deposition

Wang

Chan

et al. 2007

Journal of Applied Physics

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Articles you may be interested inIn-plane dielectric properties of epitaxial Ba0.7Sr0.3TiO3 thin films grown on GaAs for tunable device application J. Appl. Phys. 112, 054110 (2012); 10.1063/1.4749270 Effect of Pt bottom electrode texture selection on the tetragonality and physical properties of Ba0.8Sr0.2TiO3 thin films produced by pulsed laser deposition J. Appl. Phys. 112, 044105 (2012); 10.1063/1.4748288 Strain relaxation of epitaxial ( Ba 0.6 Sr 0.4 ) ( Zr 0.3 Ti 0.7 ) O 3 thin films grown on SrTiO 3 substrates by pulsed laser depositionEpitaxial Ba 0.7 Sr 0.3 TiO 3 ͑BST͒ thin films were deposited on various single crystal substrates, including LaAlO 3 ͑LAO͒ ͑001͒, ͑LaAlO 3 ͒ 0.3 ͑Sr 2 AlTaO 6 ͒ 0.35 ͑LSAT͒ ͑001͒, and SrTiO 3 ͑STO͒ ͑001͒, using pulsed laser deposition in order to study their structural and electro-optic properties. All the films exhibit a good crystalline quality and a pure perovskite phase with a distorted lattice structure. The in-plane temperature dependence of relative permittivity of the films was measured on interdigital electrodes. The films grown on LAO and LSAT exhibited an obvious room-temperature ferroelectric state, while the film grown on STO showed a broad phase transition peak near room temperature. Correspondingly, large linear electro-optic effects were observed in the BST films grown on LAO and LSAT in a transverse geometry at a wavelength of 632.8 nm using a modified Sénarmont method. The linear electro-optic coefficient r c of the BST films grown on LAO and LSAT was found to be 82.7ϫ 10 −12 and 125.0ϫ 10 −12 m / V, respectively. Nevertheless, a predominantly quadratic and slightly asymmetric electro-optic behavior is observed for the film grown on STO with the quadratic electro-optic coefficient R c of 12.9ϫ 10 −18 m 2 /V 2 .[This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 216.165.95.73 On: Wed, 03 Dec 2014 18:31:33 043515-2 Wang et al. J. Appl. Phys. 101, 043515 ͑2007͒ [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 216.165.95.73 On: Wed, 03 Dec 2014 18:31:33 043515-4 Wang et al. J. Appl. Phys. 101, 043515 ͑2007͒ [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 216.165.95.73 On: Wed, 03 Dec 2014 18:31:33 043515-5 Wang et al.

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Section: Introductionmentioning

confidence: 99%

Structural and electro-optic properties of Ba0.7Sr0.3TiO3 thin films grown on various substrates using pulsed laser deposition

Wang

Chan

et al. 2007

Journal of Applied Physics

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“…In contrast to EO polymers and nematic liquid crystals (NLCs), the refractive index of PLZT thin films is insensitive to the temperature fluctuation. And the solid-phase epitaxial PLZT films with a certain crystal orientation [32,33] could acquire EO properties without electric field poling. Moreover, the reliability of waveguide devices based on PLZT thin films is much better than the same type devices dependent on EO polymers and NLCs.…”

Section: Introductionmentioning

confidence: 99%

Ultra-Compact On-chip Electro-Optic Waveguide Ring Resonators Based on Asymmetric Au-(Pb, La)(Zr, Ti)O3-Au Structure

Yun

et al. 2015

Plasmonics

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Waveguide ring resonators (WRRs) operating at a telecom window of 1.4∼1.6 μm based on asymmetric Au-(Pb, La)(Zr, Ti)O 3 -Au structure is proposed and investigated. Electro-optical control of such WRRs is conducted by introducing epitaxial (Pb, La)(Zr, Ti)O 3 (PLZT) thin films as the core layer deposited between the upper and lower gold slabs with different widths. The long-term reliability, large electrooptic (EO) coefficients, and spontaneous polarization properties of PLZT thin films have ensured high performance of our WRRs. It has been demonstrated that the footprint of WRR can be fabricated less than 20 μm 2 with the radius of ring resonator around 1 μm through combining PLZT thin films with surface plasmons (SPs). Furthermore, the large extinction ratio (∼43 dB), as well as comparatively low insertion loss (<10.5 dB), and moderate modulation sensitivity (0.8 nm/V) can be achieved with proposed WRRs in the wavelength range of 1.4∼1.6 μm. Besides, the strong mode confinement capacity of such asymmetric metal-insulator-metal (MIM) structure can support high bending waveguides, paving the way for the fabrication of more compact electro-optic WRRs with nanometer-scale radius that can work in the other wavelength ranges.

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“…Small and integrated optical devices have been prepared using PLZT [2,3]. r c is defined by the equation as follows,…”

Section: Introductionmentioning

confidence: 99%

Optical properties of epitaxial plzt thin films

Kamehara

Ishii²,

Sato³

et al. 2007

J Electroceram

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In the epitaxial (Pb 1−x , La x )(Zr 1−y , Ti y ) 1−x/4 O 3 [PLZT] films, the composition dependence of the refractive index and electric-optic (EO) coefficient near the morphotropic phase boundary (MPB) composition was investigated. A (100/001)-oriented PLZT 10/65/35 epitaxial film is found to have isotropic optical properties. Highly (100/ 001)-oriented epitaxial PLZT films with compositions near the MPB on Nb-SrTiO 3 substrates were fabricated using a sol-gel process. The value of birefringence from 4×10 −3 to 5×10 −4 in PLZT epitaxial film was smaller than that of lithium niobate single crystal. The refractive index decreases with increasing lanthanum content. The difference in the refractive index obtained depended upon the lanthanum content up to 2%. This value is adequate for fabrication of waveguide structures. The EO coefficient of PLZT 9/65/35 thin films was 45 pm/V, which is larger than that of lithium niobate single crystal. A very small polarization dependence of the EO coefficient was also observed.

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Electrooptical Properties of Heterostructure (Pb, La)(Zr, Ti)O₃ Waveguides on Nb–SrTiO₃

Cited by 40 publications

References 12 publications

Structural and electro-optic properties of Ba0.7Sr0.3TiO3 thin films grown on various substrates using pulsed laser deposition

Structural and electro-optic properties of Ba0.7Sr0.3TiO3 thin films grown on various substrates using pulsed laser deposition

Ultra-Compact On-chip Electro-Optic Waveguide Ring Resonators Based on Asymmetric Au-(Pb, La)(Zr, Ti)O3-Au Structure

Optical properties of epitaxial plzt thin films

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Electrooptical Properties of Heterostructure (Pb, La)(Zr, Ti)O3 Waveguides on Nb–SrTiO3

Cited by 40 publications

References 12 publications

Structural and electro-optic properties of Ba0.7Sr0.3TiO3 thin films grown on various substrates using pulsed laser deposition

Structural and electro-optic properties of Ba0.7Sr0.3TiO3 thin films grown on various substrates using pulsed laser deposition

Ultra-Compact On-chip Electro-Optic Waveguide Ring Resonators Based on Asymmetric Au-(Pb, La)(Zr, Ti)O3-Au Structure

Optical properties of epitaxial plzt thin films

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Electrooptical Properties of Heterostructure (Pb, La)(Zr, Ti)O₃ Waveguides on Nb–SrTiO₃