Electrons and holes get closer

Tan, Chee-Keong; Tansu, Nelson

doi:10.1038/nnano.2014.333

Cited by 60 publications

(35 citation statements)

References 11 publications

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“…3(b) and (d). The carrier wave function represents the probability density of its spatial distribution in the active region [16]. The concept of carrier wave function can be found in Refs.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Improved characteristics of ultraviolet AlGaN multiple-quantum-well laser diodes with step-graded quantum barriers close to waveguide layers

Cai

Kang

2016

Superlattices and Microstructures

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Section: Simulation Results and Discussionmentioning

confidence: 99%

Improved characteristics of ultraviolet AlGaN multiple-quantum-well laser diodes with step-graded quantum barriers close to waveguide layers

Cai

Kang

2016

Superlattices and Microstructures

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“…Li et al demonstrated dual wavelength MQW LED with 46% indium (In) content for red emission peak at 2.12 eV thus achieving emission color from red to yellow to white with CRI of 85.6 [14]. However, large lattice mismatch between higher In incorporated InGaN red QW on GaN substrate results in issues related to charge separation and increased defect density [15]. A simpler fabrication approach of vertically stacked QWs emitting at two distinct wavelengths has been reported.…”

Section: Introductionmentioning

confidence: 99%

Di-Chromatic InGaN Based Color Tuneable Monolithic LED with High Color Rendering Index

Yadav

Titkov²,

Sakharov

et al. 2018

Applied Sciences

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Abstract:We demonstrate a phosphor free, dichromatic GaN-based monolithic white LED with vertically stacked green and blue emitting multiple quantum wells. The optimal thickness of GaN barrier layer between green and blue quantum wells used is 8 nm. This device can be tuned over a wide range of correlated color temperature (CCT) to achieve warm white (CCT = 3600 K) to cool white (CCT = 13,000 K) emission by current modulation from 2.3 A/cm 2 to 12.9 A/cm 2 . It is also demonstrated for the first time that a color rendering index (CRI) as high as 67 can be achieved with such a dichromatic source. The observed CCT and CRI tunability is associated with the spectral power evolution due to the pumping-induced carrier redistribution.

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“…This discrepancy is most notable in III-nitride semiconductor alloys, [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28] and complicates their advancement in important applications such as solid-state lighting and lasers. [29][30][31][32][33][34][35][36][37][38] It is now becoming clearer via experimental results that Auger recombination is present in III-nitrides, 14 and causes a detrimental decrease in radiative efficiency of light-emitting diodes (LEDs) operating at high operating current densities. 30 However, this result is non-intuitive because simplified models of Auger recombination rates predict a decrease in Auger recombination rates with increased bandgap, and therefore, Auger recombination should not be a concern in wide bandgap III-nitrides.…”

Section: Introductionmentioning

confidence: 99%

Effect of interface roughness on Auger recombination in semiconductor quantum wells

et al. 2017

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Auger recombination in a semiconductor is a three-carrier process, wherein the energy from the recombination of an electron and hole pair promotes a third carrier to a higher energy state. In semiconductor quantum wells with increased carrier densities, the Auger recombination becomes an appreciable fraction of the total recombination rate and degrades luminescence efficiency. Gaining insight into the variables that influence Auger recombination in semiconductor quantum wells could lead to further advances in optoelectronic and electronic devices. Here we demonstrate the important role that interface roughness has on Auger recombination within quantum wells. Our computational studies find that as the ratio of interface roughness to quantum well thickness is increased, Auger recombination is significantly enhanced. Specifically, when considering a realistic interface roughness for an InGaN quantum well, the enhancement in Auger recombination rate over a quantum well with perfect heterointerfaces can be approximately four orders of magnitude.

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Electrons and holes get closer

Cited by 60 publications

References 11 publications

Improved characteristics of ultraviolet AlGaN multiple-quantum-well laser diodes with step-graded quantum barriers close to waveguide layers

Improved characteristics of ultraviolet AlGaN multiple-quantum-well laser diodes with step-graded quantum barriers close to waveguide layers

Di-Chromatic InGaN Based Color Tuneable Monolithic LED with High Color Rendering Index

Effect of interface roughness on Auger recombination in semiconductor quantum wells

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