Electronic structure study of Eu intermetallic compounds by photoelectron spectroscopy

Cho, En-Jin; Oh, S.‐J.; Suga, S.; Suzuki, Takashi; Kasuya, T.

doi:10.1016/0368-2048(95)02495-6

Cited by 34 publications

(31 citation statements)

References 27 publications

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“…4(c), in contrast, the 4f spectrum of the EuO compound (ii) shows a large additional multiplet structure in the binding energy region from 5-13 eV below E F , which corresponds to the 4f 6 → 4f 5 final-state multiplet of trivalent Eu 3+ . This broad final-state structure is observed in accordance with previous experimental works on Eu 3+ compounds [23][24][25][26] and calculated multiplet lines 21,27 [see Fig. 4(e)].…”

Section: Haxpes: Eu 4 F Valence Bandssupporting

confidence: 92%

Chemical stability of the magnetic oxide EuO directly on silicon observed by hard x-ray photoemission spectroscopy

et al. 2011

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We present a detailed study of the electronic structure and chemical state of high-quality stoichiometric EuO and O-rich Eu 1 O 1+x thin films grown directly on silicon without any buffer layer using hard x-ray photoemission spectroscopy (HAXPES). We determine the EuO oxidation state from a consistent quantitative peak analysis of 4f valence band and 3d core-level spectra. The results prove that nearly ideal, stoichiometric, and homogeneous EuO thin films can be grown on silicon, with a uniform depth distribution of divalent Eu cations. Furthermore, we identify the chemical stability of the EuO/silicon interface from Si 2p core-level photoemission. This work clearly demonstrates the successful integration of high-quality EuO thin films directly on silicon, opening up the pathway for the future incorporation of this functional magnetic oxide into silicon-based spintronic devices.

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Section: Haxpes: Eu 4 F Valence Bandssupporting

confidence: 92%

Chemical stability of the magnetic oxide EuO directly on silicon observed by hard x-ray photoemission spectroscopy

et al. 2011

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“…Eu 3d level for EuCo 2 Si 2 from XPS (upper line-sample cleaved in ultra-high vacuum and lower line-sample cleaned by argon-ion sputtering; relative vertical scaling was adjusted to constant sum of Eu 3+ 3d 5/2 and Eu 2+ 3d 5/2 intensities). EuCo 2 Si 2 , similarly to other intermetallic compounds containing trivalent europium, EuPd 3 and EuPt 5 [14]. Details of these investigations will be published elsewhere.…”

Section: Resultsmentioning

confidence: 98%

“…4). A comparison of the Eu 2+ :Eu 3+ ratios depicted from 3d and 4d levels is a good indicator if there is a significant difference between bulk and surface europium valence-the 3d level is more surface sensitive [14]; such a comparison for the cleaved sample gives a ratio Eu 2+ :Eu 3+ of 1.6(1) for the 3d level and 0.5(1) for the 4d level, which indicates a surface valence transition of europium in Fig. 4.…”

Section: Resultsmentioning

confidence: 99%

Valence instability of europium in EuCo2Si2

Maślankiewicz

Szade

2006

Journal of Alloys and Compounds

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“…The surface shifted feature in Eu compounds is well known. [30][31][32][33][34] The 0.75 eV feature corresponds to 'bulk' Eu 2+ 4f states while the 'surface' Eu 2+ 4f feature occurs at 1.6 eV, with Ni 3d states spread between 1 -3 eV binding energy. 35,36 Very weak features are also found in the range of 4 -12 eV and we discuss its origin in the following.…”

Section: Methodsmentioning

confidence: 99%

Electronic structure changes across the valence transition inEuNi2(Si0.2Ge0.8)2

et al. 2004

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We study the electronic structure of EuNi 2 ͑Si 0.2 Ge 0.8 ͒ 2 , which exhibits a temperature dependent mixed valence transition, using 4d-4f resonant photoemission spectroscopy (RESPES), x-ray absorption spectroscopy (XAS) and temperature-dependent ultraviolet photoemission spectroscopy (UPS). The RESPES studies identify the divalent and trivalent Eu 4f character density of states (DOS) which participate in the valence transition. Using the photoionization cross section variation as a function of photon energy, we discuss the Eu, Ni, and Ge-Si partial DOS in the valence band. The bulk divalent Eu 4f character states are centered at a binding energy of about 0.75 eV, significantly away from the Fermi level. While the surface divalent feature is negligibly affected, the spectra obtained using He II␣ UPS exhibit temperature dependent bulk Eu 4f character states. The bulk divalent spectral weight is transferred to the high energy trivalent states, across the valence transition temperature, T v ϳ 80 K. The He I␣ UPS also exhibit spectral intensity changes across T v . The nonf character conduction band states at and near the Fermi level exhibit spectral weight changes up to 350 meV with a small energy ͑ϳ25 meV͒ temperature dependent pseudogaplike feature. The results suggest an increase in effective hybridization strength between the conduction and 4f electrons in the low temperature nearly trivalent phase. While the 4f character changes across T v are qualitatively consistent with change in valence configurations, the temperature dependent spectral changes in the non-f character DOS indicate direct participation in the valence transition in EuNi 2 ͑Si 0.2 Ge 0.8 ͒ 2 .

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Electronic structure study of Eu intermetallic compounds by photoelectron spectroscopy

Cited by 34 publications

References 27 publications

Chemical stability of the magnetic oxide EuO directly on silicon observed by hard x-ray photoemission spectroscopy

Chemical stability of the magnetic oxide EuO directly on silicon observed by hard x-ray photoemission spectroscopy

Valence instability of europium in EuCo2Si2

Electronic structure changes across the valence transition inEuNi2(Si0.2Ge0.8)2

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