Electronic structure of Co islands grown on the √3 × √3-Ag/Ge(111) surface

Huang, Xiao Lan; Chou, Chi Hao; Lin, Chun Liang; Tomaszewska, Agnieszka; Fu, Tsu Yi

doi:10.1016/j.tsf.2011.03.061

Cited by 8 publications

(4 citation statements)

References 27 publications

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“…Tsay et al demonstrated that Co grown on a Ge(111)/Ag-(√3 × √3)R30°s ubstrate does not intermix with Ge and preserves its magnetic properties [19]. This work was followed by a series of articles that addressed the various aspects of this appealing system [20][21][22][23][24][25].…”

Section: Introductionmentioning

confidence: 99%

Cobalt containing nano-islands on Ge(111)-c(2×8)

Mocking¹,

Poelsema²,

Zandvliet³

2013

Surface Science

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Section: Introductionmentioning

confidence: 99%

Cobalt containing nano-islands on Ge(111)-c(2×8)

Mocking¹,

Poelsema²,

Zandvliet³

2013

Surface Science

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“…4(b High-resolution voltage-dependent STM imaging of Co/Ge nanoislands reveals structural details that have not yet been reported in previous STM-based studies. 44,45,62,63 In order to exclude possible (thermal) drift effects of the piezo scanner during our voltage-dependent STM imaging, we record "dual-bias STM images." In particular, a different tunneling voltage is used for the forward and backward line scans that govern the forward and backward STM topography images.…”

Section: Inequivalence Of the R I G H T √ 13 And L E Ft √ 13 Sucsmentioning

confidence: 99%

Electronic and atomic structure of Co/Ge nanoislands on the Ge(111) surface

2013

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We report on a detailed investigation of the electronic and atomic structure of nanometer-size Co/Ge islands obtained by solid-state reactive deposition of Co atoms on a Ge(111)c(2 × 8) surface. Relying on scanning tunneling microscopy (STM) and spectroscopy (STS) measurements combined with density functional theory based calculations, the atomic structure of the Co/Ge(111) √ 13 × √ 13 R13.9 • surface reconstruction is determined. Real-space STM imaging combined with Fourier-transform analysis reveals the coexistence of two inequivalent phases of √ 13 × √ 13 R13.9 • reconstructed Co/Ge nanoislands that are rotated by +13.9 • and −13.9 • with respect to the [211] direction. STS spectra probe a small band gap that varies within the √ 13 × √ 13 R13.9 • surface unit cell between 10 and 250 meV, suggesting local metallic behavior. According to the proposed atomic-structure model, each Co/Ge(111) √ 13 × √ 13 R13.9 • surface unit cell contains one Ge adatom and six Co atoms that are located at hollow sites below the top surface Ge layer and that are stacked in the form of an equilateral triangle. The Ge adatom is located asymmetrically with respect to the Co triangle and occupies two different, yet physically equivalent, positions, giving rise to two chiral phases of Co/Ge nanoislands. The Co/Ge valence band is dominated by Co atom derived 3d states, while states in the conduction band stem from Ge adatom and Ge rest-atom derived states. Analysis of the bonding properties confirms the stability of the proposed Co/Ge atomic structure and reveals significant charge transfer from Co atoms to Ge rest atoms, suggesting ionic or metallic-covalent interaction.

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“…The unique properties of the Co/Ag/Ge(111)-√3 × √3 surface inspired the work in our laboratory where, in the last several years, the attention has been focused on the STM characterization of nanosized Co structures (nanoclusters and nanoislands) grown on the surface under discussion [ 15 - 17 ]. We have found that, depending on coverage and annealing temperature, the Co islands reveal either √13 × √13 or 2 × 2 reconstruction.…”

Section: Introductionmentioning

confidence: 99%

Structure of Co-2 × 2 nanoislands grown on Ag/Ge(111)-√3 × √3 surface studied by scanning tunneling microscopy

et al. 2012

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We have found that Co-2 × 2 islands grown on an Ag/Ge(111)-√3 × √3 surface have hcp structure with the (11-20) orientation. The island evolution involves transformation of the unit cell shape from parallelogram into rectangular, which is accompanied by the island shape transformation from hexagonal into stripe-like. Identified are two crystallographic directions for the island growth, the pseudo-[0001] and the pseudo-[1-100]. We have observed the occurrence of a lateral shift between the topmost and the underlying bilayers in the case of the island growth along the pseudo-[0001] direction. In contrast, the topmost and the underlying bilayers are unshifted for the growth along the pseudo-[1-100] direction.

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Electronic structure of Co islands grown on the √3 × √3-Ag/Ge(111) surface

Cited by 8 publications

References 27 publications

Cobalt containing nano-islands on Ge(111)-c(2×8)

Cobalt containing nano-islands on Ge(111)-c(2×8)

Electronic and atomic structure of Co/Ge nanoislands on the Ge(111) surface

Structure of Co-2 × 2 nanoislands grown on Ag/Ge(111)-√3 × √3 surface studied by scanning tunneling microscopy

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