Fully epitaxial, exchange-biased magnetic tunnel junctions ͑MTJs͒ were fabricated with a Co-based full-Heusler alloy Co 2 MnSi ͑CMS͒ thin film as a lower electrode, a MgO tunnel barrier, and a Co 50 Fe 50 upper electrode. The microfabricated CMS/ MgO / Co 50 Fe 50 MTJs exhibited relatively high tunnel magnetoresistance ratios of 90% at room temperature and 192% at 4.2 K. The bias voltage dependence of differential conductance ͑dI / dV͒ for the parallel and antiparallel magnetization configurations suggested the existence of a basic energy gap structure for the minority-spin band of the CMS electrode with an energy difference of about 0.4 eV between the bottom of the vacant minority-spin conduction band and the Fermi level. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2378397͔Employing spin-polarized electrons is essential for spintronic devices. Due to the existence of an energy gap at the Fermi level ͑E F ͒ for one spin direction, half-metallic ferromagnets are characterized by a complete spin polarization at E F , 1 so these are the most promising ferromagnetic electrode materials for spintronic devices. Co-based full-Heusler alloys have been extensively studied recently as candidates for use in half-metallic ferromagnetic electrodes 2,3 and regarding their application to magnetic tunnel junctions ͑MTJs͒. [4][5][6][7][8][9][10][11][12][13] This is because of the half-metallic ferromagnetic nature theoretically predicted for some of these alloys 14,15 and because of their high Curie temperatures, which are well above room temperature ͑RT͒. 16 One Co-based full-Heusler alloy, in particular, Co 2 MnSi ͑CMS͒, has attracted interest because of its half-metallic nature theoretically predicted, with a large energy gap of 0.42 eV ͑Ref. 14͒ to 0.81 eV ͑Ref. 15͒ for its minority-spin band, and its high Curie temperature of 985 K. 16 Sakuraba et al. reported a high tunneling magnetoresistance ͑TMR͒ ratio of 570% at 2 K ͑67% at RT͒ for MTJs consisting of an epitaxial CMS lower electrode, an amorphous AlO x tunnel barrier, and a highly oriented CMS upper electrode. 11 We recently developed fully epitaxial MTJs with a Co-based full-Heusler alloy ͑Co 2 YZ͒ thin film of either Co 2 Cr 0.6 Fe 0.4 Al ͑CCFA͒ ͑Refs. 7-9͒ or Co 2 MnGe ͑Refs. 8 and 10͒ as a lower electrode and a MgO tunnel barrier and have demonstrated a relatively high TMR ratio of 90% at RT ͑240% at 4.2 K͒ for fully epitaxial CCFA/ MgO / Co 50 Fe 50 MTJs. 9 We have developed fully epitaxial MTJs with a CMS thin film as a lower electrode and a MgO tunnel barrier in the present study and have investigated their spin-dependent tunneling characteristics.We will now describe the fabrication of fully epitaxial MTJs with a CMS thin film and a MgO tunnel barrier. Each layer in the MTJ structure was successively deposited in an ultrahigh vacuum chamber ͑with a base pressure of ϳ8 ϫ 10 −8 Pa͒ through the combined use of magnetron sputtering and electron beam ͑EB͒ evaporation.The CMS layer was deposited on a MgO buffer layer by magnetron sputtering at RT and subseq...