Electronic states of an ordered oxide on C-terminated 6H–SiC

Hollering, M.; Maier, Florian; Sieber, N.; Stammler, M.; Ristein, J.; Ley, L.; Stampfl, A. P. J.; Riley, J.D.; Leckey, Robert; Leisenberger, Friedrich Peter; Netzer, H.

doi:10.1016/s0039-6028(99)00998-x

Cited by 45 publications

(21 citation statements)

References 30 publications

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“…A DFT study26 showed that in the case of C‐terminated SiC(000‐1) surface, both the Si 2 O 3 and the Si 2 O 5 models have roughly the same formation energy, whereas the Si 2 O 5 model is energetically much more favorable on the Si‐terminated SiC(0001) surface. The calculated structural parameters were in excellent agreement with the LEED results24, 25 and also angular resolved ultraviolet photoelectron spectroscopy (UPS) results 27…”

Section: Introductionsupporting

confidence: 80%

Ultrathin Silica Films on Metals: The Long and Winding Road to Understanding the Atomic Structure

2012

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This paper critically reviews the experimental and theoretical studies on the growth of ultrathin silica films onto metal single crystal substrates reported to date. The silica films on Mo(112) and Ru(0001) are discussed in more detail to demonstrate the key roles of the multi-technique approach and interplay between experiment and theory in the quest for understanding the atomic structure of the films. The results show the structural complexity and diversity of silica overlayers on metals, providing further information towards our understanding of the atomic structure, structural dynamics and physical and chemical properties of silica and related materials.

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Section: Introductionsupporting

confidence: 80%

Ultrathin Silica Films on Metals: The Long and Winding Road to Understanding the Atomic Structure

2012

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“…The experimental value of U ≥ 1.4 eV [112] correlates well to calculations with U = 1.2 eV [113], while on SiC(0001) only a theoretical value U = 1.8 eV is available [113]. On hydrogen terminated unreconstructed SiC surfaces of both orientations (see also below), Sieber et al [37] discovered dangling bond states below the Fermi energy upon photon induced dehydrogenation.…”

Section: Electronic Structuresupporting

confidence: 58%

Atomic Structure of SiC Surfaces

Starke

2004

Silicon Carbide

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“…Note that the background is very high in the energy window between approximately 5 and 10 eV. Previous studies of oxidized SiC surfaces [34][35][36][37] have shown that O2p states exhibit binding energies which fall in that region. Virojanadara and Johansson have observed a large density of states between 5 and 10 eV binding energy [37] for oxidized SiC(0001).…”

Section: Resultsmentioning

confidence: 86%

Buffer layer free graphene on SiC(0001) via interface oxidation in water vapor

Ostler

Fromm

Koch

et al. 2014

Carbon

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Intercalation of various elements has become a popular technique to decouple the buffer layer of epitaxial graphene on SiC(0001) from the substrate. Among many other elements, oxygen can be used to passivate the SiC interface, causing the buffer layer to transform into graphene. Here, we study a gentle oxidation of the interface by annealing buffer layer and monolayer graphene samples in water vapor. X-ray photoelectron spectroscopy demonstrates the decoupling of the buffer layer from the SiC substrate. Raman spectroscopy is utilized to investigate a possible introduction of defects. Angle-resolved photoemission spectroscopy shows that the electronic structure of the water vapor treated samples. Low-energy electron microscopy (LEEM) measurements demonstrate that the decoupling takes place without changes in the surface morphology. The LEEM reflectivity spectra are discussed in terms of two different interpretations.

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Electronic states of an ordered oxide on C-terminated 6H–SiC

Cited by 45 publications

References 30 publications

Ultrathin Silica Films on Metals: The Long and Winding Road to Understanding the Atomic Structure

Ultrathin Silica Films on Metals: The Long and Winding Road to Understanding the Atomic Structure

Atomic Structure of SiC Surfaces

Buffer layer free graphene on SiC(0001) via interface oxidation in water vapor

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