Electronic Properties of Nitrogen- and Boron-Doped Amorphous Carbon (a-C:N and a-C:B) Films from Palmyra Sugar

Abstract

Amorphous carbon (a-C) film is a unique material that attracts the attention of scientists to be investigated. Nitrogen- and boron- doped amorphous carbon (a-C:N and a-C:B) have been deposited on ITO glass substrates by using nanospray method. Palmyra sugar is heated at temperature 250o C for 2.5 hours to obtain a-C. Boric acid (H3BO3) and amonium hidroxide (NH4OH) are used as the sources of boron doping and nitrogen doping. a-C:N and a-C:B are made by the variations of mole ratio for doping and amorphous carbon, that are 1:15 and 1:20. Then, these samples are dissolved into mixed dymethyl sulfoxide (DMSO) and aquades. The exfoliation process of samples has been done by applying ultrasonic cleaner for 2 hours and also centrifugated at 4000 rpm for 45 minutes. Electrical conductivity and band gap are measured by using four point probe and UV Vis. The results show that electrical conductivity increases but band gap decreases than pure a-C. Furthermore, the larger mole ratio of a:C-N and a-C:B also increases conductivity and decreases band gap, resulting between 5.5×10-1S/cm – 6.1×10-1 S/cm and 1.43 eV – 1.71 eV.

Probing the Magnetic Properties of Boron-Doped Graphenic-Based Carbon Materials

“…The introduction of boron atoms into the GC structure is expected to lead to state asymmetry, resulting in the appearance of a localized magnetic moment, which is a sign of the presence of magnetic properties in a material. In addition, several studies show that introducing boron may modify the electronic energy bandgap and enhance the efficiency of photovoltaic cells, making it suitable for use in solar cell-based devices [20,21]. As a result, the physical properties of GC are improved by the addition of boron atoms.…”

Photovoltaic Characteristics of the a-C/a-C:B Homojunction from Palmyra Sugar with Nano-Spray Method

“…Electrical conductivity is in the range of 0.5 to 0.6 S/cm which in the range of semiconductor. The optical energy gap in the range of 1.4 to 1.7 eV which is a stable area for the development of photovoltaic technology [10][11][12][13].…”