Electronic properties of blue phosphorene/transition metal dichalcogenides van der Waals heterostructures under in-plane biaxial strains

Type-II InSe/g-C3N4 Heterostructure as a High-Efficiency Oxygen Evolution Reaction Catalyst for Photoelectrochemical Water Splitting

“…22 The InSe/g-C 3 N 4 heterostructure is achieved by InSe and g-C 3 N 4 monolayers stacked in the vertical direction with consideration of vdW interactions. 34,35 The calculated lattice parameters of the InSe (a = b = 4.07 Å) and g-C 3 N 4 (a = b = 7.06 Å) monolayers are in good agreement with experimental and other theoretical calculations. 36,37 A 3 × 3 InSe supercell and a 1 × 1 g-C 3 N 4 supercell are adopted to construct the InSe/g-C 3 N 4 heterostructure to minimize the lattice mismatch to 0.78%.…”

“…The InSe/ g -C 3 N 4 heterostructure is achieved by InSe and g -C 3 N 4 monolayers stacked in the vertical direction with consideration of vdW interactions. , The calculated lattice parameters of the InSe ( a = b = 4.07 Å) and g -C 3 N 4 ( a = b = 7.06 Å) monolayers are in good agreement with experimental and other theoretical calculations. , A × InSe supercell and a 1 × 1 g -C 3 N 4 supercell are adopted to construct the InSe/ g -C 3 N 4 heterostructure to minimize the lattice mismatch to 0.78%. In Figure a, according to the relative position of the InSe and g -C 3 N 4 monolayers, we have constructed six stacking patterns: C atoms of g -C 3 N 4 locate in the hexagonal ring center of InSe (labeled as H C1 , H C2 , and H C3 ), and N atoms of g -C 3 N 4 locate in the hexagonal ring center of InSe (labeled as H N1 , H N2 , and H N3 ).…”

Spatially indirect excitons in black and blue phosphorene double layers

“…The band structure of single layer phosphorenes can be effectively altered by the application of strain [63][64][65]. Aiming at generating a direct bandgap heterostructure, we apply a mild uniaxial strain to the system, increasing by 2% the a vector and study the resulting modification to the electronic properties, fig.…”

Exploration of High Symmetry β-PxSiy Materials for 2D-electronics

“…A number of studies (Y. Ren, 2018, W. Zhang, 2018, Z. Guo, 2017, exploring the impact of strain on blue phosphorene nanoribbons and hetero structures have been performed.…”

“…Additionally, the electronic properties of all these materials can be tuned by applying electric field and strain (S. B. Kumar, 2011, E. J. G. Santos, 2015, Z. Ni, 2012, P. Kumar, 2016, F. Liu, 2017, N. D. Drummond, 2012, D. Cak r, 2014, R. Fei, 2014, M. Ghorbani-Asl, 2013, H. Guo, 2014, P. Johari, 2012, Y. Ren, 2012, W. Zhang, 2018, Z. Guo, 2017.…”