Electronic and intraband optical properties of single quantum rings under intense laser field radiation

Radu, A.; Kirakosyan, A.A.; Laroze, David; Baghramyan, H.M.; Barseghyan, M.G.

doi:10.1063/1.4894446

Cited by 65 publications

(30 citation statements)

References 49 publications

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“…Esencialmente, el problema se aproxima a considerar la ecuación 1 con un potencial de confinamiento "vestido" por el efecto del láser. En ese caso se hace el cambio , donde (Radu, et al, 2014) (2)…”

Section: Marco Teóricounclassified

Propiedades ópticas de impurezas donadoras en anillos cuánticos sometidos a los efectos combinados de campo eléctrico y radiación láser intensa no resonante

Duque

Morales

2015

Rev. Acad. Colomb. Cienc. Ex. Fis. Nat.

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Propiedades ópticas de anillos cuánticos 67 Rev. Acad. Colomb. Cienc. Ex. Fis. Nat. 39(Supl.):67-76, 2015 Propiedades ópticas de impurezas donadoras en anillos cuánticos sometidos a los efectos combinados de campo eléctrico y radiación láser intensa no resonante ResumenEste trabajo corresponde a un estudio teórico de las propiedades ópticas y de impurezas para un electrón confinado en un anillo cuántico de GaAs-(Ga,Al)As sometido a los efectos combinados de campo eléctrico estacionario y radiación láser de alta intensidad no resonante. Los cálculos se hacen en la aproximación de masa efectiva con un proceso de diagonalización para resolver la ecuación de autovalores del Hamiltoniano. Se estudian la absorción óptica y los cambios en el índice de refracción. Los resultados obtenidos sugieren un corrimiento al rojo de las propiedades ópticas en función del campo eléctrico mientras que en el láser no resonante puede inducir efectos combinados de corrimientos al rojo y al azul. El trabajo es útil para entender las propiedades de impurezas en anillos cuánticos sometidos a perturbaciones que rompen la simetría azimutal del sistema tales como campos eléctricos estacionarios y radiación láser no resonante de alta intensidad.Palabras clave: anillos cuánticos, impureza donadora, propiedades ópticas, campo eléctrico. Optical properties of donor impurities in quantum rings under the combined effects of electric field and nonresonant intense laser radiation AbstractThis work corresponds to a theoretical study of the optical properties of impurities for an electron confined in a GaAs-(Ga, Al) As quantum ring under the combined effects of stationary electric field and high intensity nonresonant laser radiation. Calculations are made on the effective mass approximation with a diagonalization process to solve the eigenvalues equation of the Hamiltonian. The optical absorption and the changes in refractive index are studied. The results suggest a redshift of the optical properties as a function of the electric field while the nonresonant laser can induce combined effects of redshifts and blueshifts. The work is useful for understanding the properties of impurities in quantum rings subjected to perturbations which break the azimuthal symmetry of the system such as non-stationary resonant electric fields and high-intensity laser radiation.

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Section: Marco Teóricounclassified

Propiedades ópticas de impurezas donadoras en anillos cuánticos sometidos a los efectos combinados de campo eléctrico y radiación láser intensa no resonante

Duque

Morales

2015

Rev. Acad. Colomb. Cienc. Ex. Fis. Nat.

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“…We remark that this technique is a useful numerical method to compute the eigenstates of quantum systems [38,39]. In particular, it has been employed in QDs [40], in QRs [24,41] as well as in CQDR structures [26,42]. In addition, let us comment that in Ref.…”

Section: Theoretical Frameworkmentioning

confidence: 99%

“…On the other hand, the intraband linear absorption coefficient is calculated considering Fermi's golden rule, summarized in the following expression [41,43,44]:…”

Section: Theoretical Frameworkmentioning

confidence: 99%

Influence of lateral electric field on intraband optical absorption in concentric double quantum rings

Baghramyan

Barseghyan

Laroze

et al. 2016

Physica E: Low-dimensional Systems and Nanostructures

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. (2016) Influence of lateral electric field on intraband optical absorption in concentric double quantum rings. Physica E: Low-Dimensional Systems and Nanostructures, 77, pp. 81-89.There may be differences between this version and the published version. You are advised to consult the publisher's version if you wish to cite from it.http://eprints.gla.ac.uk/113327/ AbstractThe influence of lateral electric field on one-electron states and intraband absorption in two-dimensional concentric double quantum rings is investigated. The confining potential of the rings is modeled as a double harmonic central potential. Using the exact diagonalization technique, we calculate the dependence of the electron energy spectrum as a function of the electric field strength as well as the inner ring radius. Also, different values of confinement strength are considered. Selection rule is obtained for intraband transitions, caused by the direction of incident light polarization. The intraband absorption coefficient is calculated for different values of electric field strength, inner ring radius, confinement strength and incident light polarization direction. The combined influence of electric field strength and change of confining strength show that while the increment of the first one leads only to blueshift of absorption spectrum, the augment of the second one makes the redshift. In addition, both blueshift and redshift of the spectrum have been obtained with the enlargement of inner ring radius. Finally, we show that the absorption spectrum undergoes redshift by changing the polarization of incident light from x to y axis.

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“…Calculations of the intraband optical absorption are based on Fermi's golden rule with the corresponding coefficient [15]:…”

Section: Theoretical Frameworkmentioning

confidence: 99%

“…This polarization dependence gives QR and QD photodetectors an advantage over QW photodetectors. These optical characteristics have recently initiated a great interest to investigate theoretically the intraband optical properties of semiconductor QDs and QRs, taking into account the influence of external electromagnetic fields [5][6][7][8][9][10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Impurity-related intraband absorption in coupled quantum dot-ring structure under lateral electric field

Barseghyan

Baghramyan

Laroze

et al. 2015

Physica E: Low-dimensional Systems and Nanostructures

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Impurity-related intraband absorption in coupled quantum dot-ring structure under lateral electric field, Physica E: Low-dimensional Systems and Nanostructures, http://dx.doi.org/10. 1016/j.physe.2015.07.032 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting galley proof before it is published in its final citable form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.www.elsevier.com/locate/physe Impurity-related intraband absorption in coupled quantum dot-ring structure under lateral electric field AbstractThe effects of a lateral electric field on intraband absorption in GaAs/GaAlAs two-dimensional coupled quantum dot-ring structure with an on-centre hydrogenic donor impurity is investigated. The confining potential of the system consists of two parabolas with various confinement energies. The calculations are made using the exact diagonalization technique. A selection rule for intraband transitions was found for x-polarized incident light. The absorption spectrum mainly exhibits a redshift with the increment of electric field strength. On the other hand, the absorption spectrum can exhibit either a blue-or redshift depending on the values of confinement energies of dot and ring. Additionally, electric field changes the energetic shift direction influenced by the variation of barrier thickness of the structure.

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Electronic and intraband optical properties of single quantum rings under intense laser field radiation

Cited by 65 publications

References 49 publications

Propiedades ópticas de impurezas donadoras en anillos cuánticos sometidos a los efectos combinados de campo eléctrico y radiación láser intensa no resonante

Propiedades ópticas de impurezas donadoras en anillos cuánticos sometidos a los efectos combinados de campo eléctrico y radiación láser intensa no resonante

Influence of lateral electric field on intraband optical absorption in concentric double quantum rings

Impurity-related intraband absorption in coupled quantum dot-ring structure under lateral electric field

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