MRS Proc. 2001 DOI: 10.1557/proc-685-d14.4.1 View full text
Kevin L. Jensen

Abstract: AbstractThe effects of a Coulomb-like potential in the Schottky barrier existing between a material-diamond interface is analyzed. The inclusion is intended to mimic the effects of an ionized trap within the barrier, and therefore to account for charge injection into the conduction band of diamond via a Poole-Frenkel transport mechanism. The present treatment is to provide a qualitative account of the increase in current density near the inclusion, which can be substantial. The model is first reduced to an ana…

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