Electron spin resonance in a 2D system at a GaN/AlGaN heterojunction

Shchepetilnikov, A. V.; Frolov, D. D.; Solovyev, V. V.; Nefyodov, Yu. A.; Großer, A.; Mikolajick, Thomas; Schmult, S.; Кукушкин, И. В.

doi:10.1063/1.5041363

Cited by 19 publications

(3 citation statements)

References 38 publications

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“…Spin accumulation can be detected with the Hanle effect by applying a perpendicular magnetic field B z . Spin injected via the tunnel junction into the 2DEG is precessed at a rate ω L = gμB z /ℏ ( g = 2), [ 28,29 ] while the spin accumulation dephases at the same time, where g is the Lande g‐factor, μ is the Bohr magneton, and ħ is the reduced Planck's constant. Thus, the spin‐induced electrochemical potential in the 2DEG changes with an increasing magnetic field.…”

Section: Resultsmentioning

confidence: 99%

Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier

Zhang

Tang

Yang

et al. 2021

Adv Funct Materials

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The spin injection into 2D electron gas (2DEG) in AlN/GaN heterostructures is studied by magneto‐transport measurements. An ultrathin AlN layer at the hetero‐interface acts as a barrier to form high‐quality 2DEG in the triangular quantum well and a tunneling barrier for the spin injection to overcome the conductance mismatch issue. In this study, Hanle signals and inversed Hanle signals are observed, proving that the spin injection is achieved in the 2DEG in the AlN/GaN heterostructure rather than in the interfacial states. The spin‐relaxation time in 2DEG at 8 K is found to be as long as 860 ps, which almost keeps constant with bias and decreases with increasing temperature. The spin‐relaxation process is illustrated as Rashba spin‐orbit coupling dominated D'yakonov Perel’ mechanisms above 8 K. These results show the promising potential of 2DEG in AlN/GaN heterostructures for spin field‐effect transistor applications.

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Section: Resultsmentioning

confidence: 99%

Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier

Zhang

Tang

Yang

et al. 2021

Adv Funct Materials

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“…High density and high mobility 2DEG is formed at the interface 7,8 . The 2DEG is also investigated on the viewpoint of spin-orbit interactions [9][10][11] and electron spin resonances 12 . Quantum nanostructures can be fabricated from the heterostructure by utilizing nano-fabrications.…”

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confidence: 99%

Formation of quantum dots in GaN/AlGaN FETs

Otsuka

Abe

Kitada

et al. 2020

Sci Rep

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GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation of quantum dots in the conduction channel near the depletion of the 2-dimensional electron gas (2DEG). Multiple quantum dots are formed in the disordered potential induced by impurities in the FET conduction channel. We also measure the gate insulator dependence of the transport properties. These results can be utilized for the development of quantum dot devices utilizing GaN/AlGaN heterostructures and evaluation of the impurities in GaN/AlGaN FET channels.

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“…GaN and AlGaN are typical representatives due to their intrinsically weak spin-orbit coupling and relatively long spin relaxation times. [7][8][9][10][11] Successful RT spin injection was achieved in both bulk and nanowire GaN. 12,13) However, the spin injection only has relatively low spin polarization (7.9%).…”

mentioning

confidence: 99%

Room-temperature spin injection and optical polarization in nitride-based blue and ultra-violet spin light-emitting diodes

Wu¹,

Wu²,

Zhong³

et al. 2020

Appl. Phys. Express

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RT spin injection and optical polarization in nitride-based spin-LEDs are investigated. By employing CoFeB/MgO as the spin injector, the spin relaxation time and diffusion length in n-type GaN film are revealed to be 54.9 ps and 214.4 nm, respectively, through the three-terminal Hanle measurement. As the spin injector structure is applied to blue spin-LED, a maximal circular polarization of 3.3% is detected in electroluminescence, with the surface-emitting geometry and under a vertical magnetic field. UV spin-LED with n-Al0.05Ga0.95N transport layer is also fabricated, whose optical polarization is relatively smaller due to the larger spin–orbit coupling in Al atoms.

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Electron spin resonance in a 2D system at a GaN/AlGaN heterojunction

Cited by 19 publications

References 38 publications

Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier

Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier

Formation of quantum dots in GaN/AlGaN FETs

Room-temperature spin injection and optical polarization in nitride-based blue and ultra-violet spin light-emitting diodes

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