Electron Spin Relaxation in Semiconductors

Hägele, D.; Döhrmann, S.; Rudolph, J.; Oestreich, M.

doi:10.1007/11423256_20

Cited by 19 publications

(16 citation statements)

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“…(221) provides the inhomogeneous broadening which leads to the spin relaxation and dephasing [675]. Experimentally Döhrmann et al [388,667] observed a ''turn on'' of the spin relaxation by switching on the magnetic field.…”

Section: Spin Relaxation and Dephasing In Gaas (110) Quantum Wellsmentioning

confidence: 97%

“…With increasing temperature, spin relaxation anisotropy increases as the Bir-Aronov-Pikus mechanism becomes weaker and the D'yakonov-Perel' mechanism for in-plane spin relaxation grows stronger. 63 The decrease of τ z at high temperature was explained by the intersubband spin relaxation mechanism [388,667]. The intersubband spin relaxation mechanism can be understood as follows: when higher subbands are involved, the spin-orbit coupling…”

Section: Quantum Wells: Experiments and Theoriesmentioning

confidence: 97%

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Spin dynamics in semiconductors

2010

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This article reviews the current status of spin dynamics in semiconductors which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics. The primary focus is the theoretical and experimental developments of spin relaxation and dephasing in both spin precession in time domain and spin diffusion and transport in spacial domain. A fully microscopic many-body investigation on spin dynamics based on the kinetic spin Bloch equation approach is reviewed comprehensively.Comment: a review article with 193 pages and 1103 references. To be published in Physics Reports

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Section: Spin Relaxation and Dephasing In Gaas (110) Quantum Wellsmentioning

confidence: 97%

Section: Quantum Wells: Experiments and Theoriesmentioning

confidence: 97%

Spin dynamics in semiconductors

2010

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“…3.1). Also, the recently discovered intersubband spin relaxation [114,186] cannot completely account for the experimental findings according to the microscopic calculations by Zhou and Wu [187]. Müller et al [44] suggested that the observed lifetimes T 2 are limited by a mechanism that was initially put forward by Sherman in 2003 [188] which results from random spin-orbit fields arising from electrical fields due to inevitable spatial fluctuations of the impurity atoms in the δ-doping sheets (see also Ref.…”

Section: Investigations By Snsmentioning

confidence: 99%

Semiconductor spin noise spectroscopy: Fundamentals, accomplishments, and challenges

Müller

Oestreich

Römer

et al. 2010

Physica E: Low-dimensional Systems and Nanostructures

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125

126

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Semiconductor spin noise spectroscopy (SNS) has emerged as a unique experimental tool that utilizes spin fluctuations to provide profound insight into undisturbed spin dynamics in doped semiconductors and semiconductor nanostructures. The technique maps ever present stochastic spin polarization of free and localized carriers at thermal equilibrium via the Faraday effect onto the light polarization of an off-resonant probe laser and was transferred from atom optics to semiconductor physics in 2005. The inimitable advantage of spin noise spectroscopy to all other probes of semiconductor spin dynamics lies in the fact that in principle no energy has to be dissipated in the sample, i.e., SNS exclusively yields the intrinsic, undisturbed spin dynamics and promises optical non-demolition spin measurements for prospective solid state based optical spin quantum information devices. SNS is especially suitable for small electron ensembles as the relative noise increases with decreasing number of electrons. In this review, we first introduce the basic principles of SNS and the difference in spin noise of donor bound and of delocalized conduction band electrons. We continue the introduction by discussing the spectral shape of spin noise and prospects of spin noise as a quantum interface between light and matter. In the main part, we give a short overview about spin relaxation in semiconductors and summarize corresponding experiments employing SNS. Finally, we give in-depth insight into the experimental aspects and discuss possible applications of SNS.

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“…[1][2][3] Recent experiments show that the spin relaxation time (SRT) in (110)-oriented GaAs quantum wells (QWs) is extremely long, and thus the spin dynamics in this system has attracted much attention both experimentally and theoretically. [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] The physics underlying this effect is the absence of the D'yakonov-Perel' (DP) mechanism, 19 which is the leading spin relaxation mechanism in n-type zinc-blende semiconductors. The DP mechanism is from the joint effects of the momentum scattering and the momentum-dependent effective magnetic field (inhomogenous broadening 20 ) induced by the Dresselhaus 21 and the Rashba 22 spin-orbit coupling (SOC).…”

mentioning

confidence: 99%

“…Our calculation gives the ratio γ /γ ⊥ = 7.5, which is consistent with the huge spin dephasing anisotropy observed in experiments. 8,9,15 In Fig. 2, we plot the SRT due to the DP mechanism induced by the random Rashba field as function of temperature for B = 0 (a) and 4 T (b) with impurity densities N i = N e and 0.01N e .…”

mentioning

confidence: 99%

Spin relaxation due to random Rashba spin-orbit coupling in GaAs (110) quantum wells

Zhou¹,

Wu²

2010

Europhys. Lett.

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We investigate the spin relaxation due to the random Rashba spin-orbit coupling in symmetric GaAs (110) quantum wells from the fully microscopic kinetic spin Bloch equation approach. All relevant scatterings, such as the electron-impurity, electron-longitudinal-optical-phonon, electronacoustic-phonon, as well as electron-electron Coulomb scatterings are explicitly included. It is shown that our calculation reproduces the experimental data by Müller et al. [Phys. Rev. Lett. 101, 206601 (2008)] for a reasonable choice of parameter values. We also predict that the temperature dependence of spin relaxation time presents a peak in the case with low impurity density, which originates from the electron-electron Coulomb scattering.PACS numbers: 72.25. Rb, 71.70.Ej, 73.21.Fg Semiconductor spintronics has been an active field of research lately due to the potential application of spinbased devices.1-3 Recent experiments show that the spin relaxation time (SRT) in (110)-oriented GaAs quantum wells (QWs) is extremely long, and thus the spin dynamics in this system has attracted much attention both experimentally and theoretically.4-18 The physics underlying this effect is the absence of the D'yakonov-Perel' (DP) mechanism, 19 which is the leading spin relaxation mechanism in n-type zinc-blende semiconductors. The DP mechanism is from the joint effects of the momentum scattering and the momentum-dependent effective magnetic field (inhomogenous broadening 20 ) induced by the Dresselhaus 21 and the Rashba 22 spin-orbit coupling (SOC). In symmetric GaAs (110) QWs with only the lowest subband occupied, the in-plane component of the spin-orbit field vanishes.23 Therefore the DP mechanism cannot affect electrons with spin polarization along the growth direction and the SRT in this system is considerably larger than that in (100) QWs. In most of the previous works, the main reason limiting the SRT is attributed to the Bir-Aronov-Pikus mechanism, 24 which is from the exchange interaction between the electrons and the photo-generated holes. One of the exceptions is the spin noise spectroscopy measurement by Müller et al.,15 where the excitation of semiconductor is negligible and hence the Bir-Aronov-Pikus mechanism is avoided. They reported the longest SRT in this system which is about 24 ns. Since the DP and Bir-Aronov-Pikus mechanisms are both absent, and the virtual intersubband spin-flip SOC induced spin relaxation is also ruled out due to the relatively high mobility of the samples, 16 the possible reason limiting the SRT is the DP mechanism due to the random Rashba SOC caused by the fluctuations of the donor density. 25,26As shown by Sherman et al., 25,26 even in symmetric QWs, the unavoidable fluctuations of the concentration of the dopant ions still lead to a random electric field along the growth direction, and hence a random Rashba SOC at each point of a QW. This random SOC provides an inhomogeneous broadening and induces the DP spin relaxation. The previous investigations 25,26 on the spin relaxation due to this mechan...

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Electron Spin Relaxation in Semiconductors

Cited by 19 publications

References 1 publication

Spin dynamics in semiconductors

Spin dynamics in semiconductors

Semiconductor spin noise spectroscopy: Fundamentals, accomplishments, and challenges

Spin relaxation due to random Rashba spin-orbit coupling in GaAs (110) quantum wells

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