Electron-spin relaxation in bulk GaAs for doping densities close to the metal-to-insulator transition

Römer, Michael; Bernien, Hannes; Müller, G.; Schuh, Dieter; Hübner, Jens; Oestreich, M.

doi:10.1103/physrevb.81.075216

Cited by 72 publications

(118 citation statements)

References 23 publications

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“…Note that the separation between the pump pulse trains is 80T R ≈ 1.05 µs ≫ T * 2 . The measured T * 2 is close to the values obtained from RSA [6], Hanle [9,10], and spin noise [11,12] experiments at B ≈ 0.…”

supporting

confidence: 65%

Extended pump-probe Faraday rotation spectroscopy of the submicrosecond electron spin dynamics in n -type GaAs

Belykh¹,

Evers²,

Yakovlev³

et al. 2016

Phys. Rev. B

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We develop an extended pump-probe Faraday rotation technique to study submicrosecond electron spin dynamics with picosecond time resolution in a wide range of magnetic fields. The electron spin dephasing time T * 2 and the longitudinal spin relaxation time T1, both approaching 250 ns in weak fields, are measured thereby in n-type bulk GaAs. By tailoring the pump pulse train through increasing the contained number of pulses, the buildup of resonant spin amplification is demonstrated for the electron spin polarization. The spin precession amplitude in high magnetic fields applied in the Voigt geometry shows a non-monotonic dynamics deviating strongly from a mono-exponential decay and revealing slow beatings. The beatings indicate a two spin component behavior with a g-factor difference of ∆g ∼ 4 × 10 −4 , much smaller than the ∆g expected for free and donor-bound electrons. This g-factor variation indicates efficient, but incomplete spin exchange averaging.doi:10.1103/PhysRevB.94.241202Initialized electron spins in semiconductors undergo a complex dynamics depending on external magnetic field, interaction with other charge carriers and nuclei, spinorbit interaction, etc. Knowledge of the resulting spin dynamics provides information on these interactions and related spin properties such as g factors and relaxation times which are important for basic research and application in information technologies. Commonly, information on spin properties is mostly obtained from resonance techniques like electron paramagnetic resonance, optically-detected magnetic resonance, spin-flip Raman scattering, or polarized photoluminescence (Hanle effect). The development of pump-probe Faraday/Kerr rotation spectroscopy has facilitated exploration of the coherent spin dynamics, in particular the Larmor spin precession around a magnetic field, with picosecond temporal resolution and opened new ways for spin control and manipulation [1][2][3][4][5].The main limitation imposed on the standard pumpprobe technique is the restricted time range that can be monitored. This restriction comes from the finite length of mechanical delay lines for the pump-probe delay limiting this time range to a few nanoseconds, which can be too short to address the carrier spin dynamics in semiconductors. To evaluate longer spin dephasing times the resonant spin amplification (RSA) technique [6,7] can be used, which, however, does not provide detailed insight into complex spin dynamics such as a nonexponential decay of spin polarization. Also, the longitudinal spin relaxation characterized by the T 1 time typically exceeds the nanosecond range, so that indirect optical techniques like the spin inertia method [8] have to be used, again with limited access to nontrivial spin dynamics.Here we extend the standard pump-probe Faraday rotation (PPFR) technique to address a much longer time range by employing a tailored pump pulse sequence, while maintaining picosecond time resolution. The technique is applied to the submicrosecond electron spin dynamics in bulk n-type ...

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supporting

confidence: 65%

Extended pump-probe Faraday rotation spectroscopy of the submicrosecond electron spin dynamics in n -type GaAs

Belykh¹,

Evers²,

Yakovlev³

et al. 2016

Phys. Rev. B

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“…[52]. These experiments were carried out by performing spin noise spectroscopy on a sample of n-type GaAs at a doping concentration of n = 2.7 · 10 15 cm −3 , without any driving field and for lattice temperatures T L between 4 and 80 K. In Fig.…”

Section: Comparison With Experiments and With Other Theoretical Appromentioning

confidence: 99%

Relaxation of electron spin during high-field transport in GaAs bulk

Spezia¹,

Adorno²,

Pizzolato³

et al. 2010

J. Stat. Mech.

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Abstract. A semiclassical Monte Carlo approach is adopted to study the multivalley spin depolarization of drifting electrons in a doped n-type GaAs bulk semiconductor, in a wide range of lattice temperature (40 < T L < 300 K) and doping density (10 13 < n < 10 16 cm −3 ). The decay of the initial non-equilibrium spin polarization of the conduction electrons is investigated as a function of the amplitude of the driving static electric field, ranging between 0.1 and 6 kV/cm, by considering the spin dynamics of electrons in both the Γ and the upper valleys of the semiconductor. Doping density considerably affects spin relaxation at low temperature and weak intensity of the driving electric field. At high values of the electric field, the strong spin-orbit coupling of electrons in the L-valleys significantly reduces the average spin polarization lifetime, but, unexpectedly, for field amplitudes greater than 2.5 kV/cm, the spin lifetime increases with the lattice temperature. Our numerical findings are validated by a good agreement with the available experimental results and with calculations recently obtained by a different theoretical approach.

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“…By now it has already been successfully applied to bulk semiconductors, 5,6 multiple and single quantum well structures, 7,8 individual quantum dots and quantum dot ensembles [9][10][11] making it possible to reveal and analyze spin dynamics of electrons and holes.…”

Section: Introductionmentioning

confidence: 99%

Exciton spin noise in quantum wells

Smirnov¹,

Glazov²

2014

Phys. Rev. B

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A theory of spin fluctuations of excitons in quantum wells in the presence of non-resonant excitation has been developed. Both bright and dark excitonic states have been taken into account. The effect of a magnetic field applied in a quantum well plane has been analyzed in detail. We demonstrate that in relatively small fields the spin noise spectrum consists of a single peak centered at a zero frequency while an increase of magnetic field results in the formation of the second peak in the spectrum owing to an interplay of the Larmor effect of the magnetic field and the exchange interaction between electrons and holes forming excitons. Experimental possibilities to observe the exciton spin noise are discussed, particularly, by means of ultrafast spin noise spectroscopy. We show that the fluctuation spectra contain, in addition to individual contributions of electrons and holes, an information about correlation of their spins.

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Electron-spin relaxation in bulk GaAs for doping densities close to the metal-to-insulator transition

Cited by 72 publications

References 23 publications

Extended pump-probe Faraday rotation spectroscopy of the submicrosecond electron spin dynamics in n -type GaAs

Extended pump-probe Faraday rotation spectroscopy of the submicrosecond electron spin dynamics in n -type GaAs

Relaxation of electron spin during high-field transport in GaAs bulk

Exciton spin noise in quantum wells

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