Electron–optical-phonon interactions in ultrathin GaAs/AlAs multiple quantum wells

Tsen, Kong-Thon; Wald, Keith; Ruf, T.; Yu, Peter Y.; Morkoç̌, H.

doi:10.1103/physrevlett.67.2557

Cited by 123 publications

(36 citation statements)

References 15 publications

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“…Each curve has broad maximum in the neighborhood of the phonon wave vector q = (2mω λ / ) 1/2 where phonon heating is most significant. This is similar to findings in GaAs QWs 69,71 and in bilayer graphene. 68 In the q range where the elph scattering rate in Fig.…”

Section: Heating Of Optical Phononssupporting

confidence: 90%

Hot-electron cooling by acoustic and optical phonons in monolayers ofMoS2and other transition-metal dichalcogenides

2014

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We study hot-electron cooling by acoustic and optical phonons in monolayer MoS2. The cooling power P (Pe = P/n) is investigated as a function of electron temperature Te (0-500 K) and carrier density n (10 10 -10 13 cm −2 ) taking into account all relevant electron-phonon (el-ph) couplings. We find that the cross over from acoustic phonon dominated cooling at low Te to optical phonon dominated cooling at higher Te takes place at Te ∼ 50 − 75 K. The unscreened deformation potential (DP) coupling to the TA phonon is shown to dominate P due to acoustic phonon scattering over the entire temperature and density range considered. The cooling power due to screened DP coupling to the LA phonon and screened piezoelectric (PE) coupling to the TA and LA phonons is orders of magnitude lower. In the Bloch-Grüneisen (BG) regime, P ∼ T 4 e (T 6 e ) and P ∼ n −1/2 (Pe ∼ n −3/2 ) are predicted for unscreened (screened) el-ph interaction. The cooling power due to optical phonons is dominated by zero-order DP couplings and the Fröhlich interaction, and is found to be significantly reduced by the hot-phonon effect when the phonon relaxation time due to phonon-phonon scattering is large compared to the relaxation time due to el-ph scattering. The Te and n dependence of the hot-phonon distribution function is also studied. Our results for monolayer MoS2 are compared with those in conventional two-dimensional electron gases (2DEGs) as well as monolayer and bilayer graphene.

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Section: Heating Of Optical Phononssupporting

confidence: 90%

Hot-electron cooling by acoustic and optical phonons in monolayers ofMoS2and other transition-metal dichalcogenides

2014

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“…The resulting phonon potential function is in good agreement with calculations based on the microscopic model [7,9]. The DC model with the Huang-Zhu potential for confined phonons gives the best explanation of the experimental data on the electron-PO phonon interaction in ultrathin multiple QWs [10]. The calculations of QW width dependences of the electron-confined phonon SR in the AlAs / GaAs / AlAs QWs, using the Huang-Zhu and the ϕ C q (z) ∼ cos q z z (Eq.…”

Section: Po Phonon Potential Amplitudes and Envelope Functions In A Qsupporting

confidence: 69%

“…The electron SR in the QW of width L A by confined phonons, according to Eqs. (4), (10), and (17) is equal to…”

Section: General Expression For Scattering Ratementioning

confidence: 99%

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Electron scattering by interface polar optical phonons in double barrier heterostructures

Požela¹

2007

Lithuanian J. Phys.

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The confined electron-interface (IF) polar optical phonon scattering in double heterostructures is considered within the dielectric continuum approach. The dependences of electron-IF phonon scattering rate (SR) on the quantum well (QW) width and on the IF phonon frequencies are calculated. The intrasubband SR of electrons confined in the QW by IF phonons is estimated for AlAs / GaAs / AlAs, GaAs / InAs / GaAs, and GaN / InN / GaN heterostructures. The SR of electrons, the energy of which is higher than the barrier phonon energy, increases with an increase of the phonon energy. It is shown that the SR of electrons, the energy of which corresponds to the bulk phonon energy in a QW material, by symmetric IF phonons strongly decreases with a decrease of the QW width, when the width is smaller than 5-10 nm. Contrary, the SR of electrons, the energy of which exceeds the highest IF phonon energy, by IF phonons increases in a narrow QW. This means that the electron mobility and the saturated drift velocity at high electric fields in a narrow QW must be higher than in a wide one.

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“…Calculations of electron intraand inter-subband scattering rates [14,15] in GaAs QWs, in zero magnetic field, due to confined LO phonons have been performed using the above three models and estimates based on HZ model are found to be in good agreement with experimental results [16,17]. The HZ model has received wide acceptance and best describes [18,19] electron±phonon interaction in quasi-two-dimensional systems. Calculations of electron scattering rates due to confined modes, described by these models, in QWs in quantizing magnetic field also exist in literature [20].…”

Section: Introductionmentioning

confidence: 77%

Energy Loss Rate of Hot Electrons Due to Confined and Interface Optical Phonons in Semiconductor Quantum Wells in Quantizing Magnetic Field

Bhat

Kapatkar

Kubakaddi

et al. 1998

phys. stat. sol. (b)

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The energy loss rate (ELR) of hot electrons in semiconductor quantum wells in quantizing magnetic field is studied using the electron temperature model. Electron interaction with confined LO phonons described by Huang and Zhu, slab mode and guided mode models is considered. The effect of interface modes is also incorporated. Numerical results are given for the GaAs/AlAs quantum well system for the dependence of ELR on magnetic field, electron temperature and the effect of quantum well barrier height. The results are compared with those obtained with the bulk description of LO phonons. The energy relaxation process is dominated by interface modes at lower well widths and by confined modes at higher well widths.

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Electron–optical-phonon interactions in ultrathin GaAs/AlAs multiple quantum wells

Cited by 123 publications

References 15 publications

Hot-electron cooling by acoustic and optical phonons in monolayers ofMoS2and other transition-metal dichalcogenides

Hot-electron cooling by acoustic and optical phonons in monolayers ofMoS2and other transition-metal dichalcogenides

Electron scattering by interface polar optical phonons in double barrier heterostructures

Energy Loss Rate of Hot Electrons Due to Confined and Interface Optical Phonons in Semiconductor Quantum Wells in Quantizing Magnetic Field

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