Electron-nitrogen scattering in dilute nitrides

Vaughan, M. P.; Ridley, B. K.

doi:10.1103/physrevb.75.195205

Cited by 41 publications

(46 citation statements)

References 38 publications

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“…Furthermore, important aspects of the electronic properties of InAs 1−x N x , such as the electron effective mass and the effect of compositional disorder on electron scattering rates, are still largely unexplored. A better knowledge of these properties is essential for testing existing models of the electronic properties of III-N-V alloys [2][3][4][5]22,23 and for exploiting InAs 1−x N x in functional devices.…”

Section: Introductionmentioning

confidence: 99%

Effect of low nitrogen concentrations on the electronic properties ofInAs1−xNx

et al. 2009

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We report cyclotron resonance ͑CR͒, transverse magnetoresistance ͑MR͒, and Hall effect studies of a series of n-type InAs 1−x N x epilayers grown on GaAs with x up to 1%. The well-resolved CR absorption lines, the classical linear MR, Shubnikov-de Haas magneto-oscillations, and negative MR revealed in our experiments provide a means of probing the effect of the N atoms on the electronic properties of this alloy system and reveal qualitative differences compared to the case of the wider gap III-N-V compounds, such as GaAs 1−x N x . In GaAs 1−x N x electron localization by N levels that are resonant with the extended band states of the host crystal act to degrade the electrical conductivity at small x ͑ϳ0.1%͒. These phenomena are significantly weaker in InAs 1−x N x due to the smaller energy gap and higher energy of the N levels relative to the conduction band minimum. In InAs 1−x N x the electrical conductivity retains the characteristic features of transport through extended states, with electron coherence lengths ͑l ϳ 100 nm at 2 K͒ and electron mobilities ͑ =6 ϫ 10 3 cm 2 V −1 s −1 at 300 K͒ that remain relatively large even at x =1%.

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Section: Introductionmentioning

confidence: 99%

Effect of low nitrogen concentrations on the electronic properties ofInAs1−xNx

et al. 2009

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“…[8][9][10][11] The mobility is further reduced by localized nitrogen related resonant scattering. [12][13][14][15] However, the addition of N has negligible effect on the valence band; thus the hole mobility is not expected to be influenced by nitrogen incorporation. Therefore, in material with relatively high nitrogen incorporation, the hole mobility can be higher than the electron mobility at low temperature because of both smaller effective mass and the lack of scattering by nitrogen complexes as observed in our previous studies.…”

Section: Introductionmentioning

confidence: 99%

Energy and momentum relaxation dynamics of hot holes in modulation doped GaInNAs/GaAs quantum wells

Sun

Balkan

2009

Journal of Applied Physics

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We present the studies of energy and momentum relaxation dynamics of nonequilibrium holes in GaxIn1−xNyAs1−y/GaAs quantum well modulation doped with Be. Experimental results show that the real-space transfer (RST) of hot holes occurs via thermionic emission from the high-mobility GaInNAs quantum wells into the low-mobility GaAs barriers at a threshold electric field of F∼6 kV/cm at T=13 K. At this field the hole drift velocity saturates at vd∼1×107 cm/s. A slight increase in the field above the threshold leads to the impact ionization of acceptors in the barriers by the nonequilibrium holes. We observe and model theoretically a negative differential mobility effect induced by RST that occurs at an electric field of F∼7 kV/cm. The observed current surge at electric fields above 7 kV/cm is attributed to the hole multiplication induced by shallow impurity breakdown in the GaAs barrier and impact ionization in the high-field domain regime associated with the packet of RST of holes in the well.

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“…The effect of adding the N scattering mechanism is that it reduces the peak velocity attained in the steady state, and as a result of this, we therefore find that our nitrogen scattering model is a much better fit to current experimental data 16 and analytic theoretical predictions. 13,15 While our N scattering model assumes a non-parabolic band, it does not include the distortion characteristic of the BAC model. By using an analytic approximation for the E À band in the BAC a useful insight is gained into the potential effects of negative effective mass states, particularly under transient conditions.…”

Section: Discussionmentioning

confidence: 99%

“…For N scattering, we fit the N scattering rates previously derived by Fahy et al using the LCINS method 12 to an analytic form. We start with a previously derived expression, 12,13 …”

Section: A Nitrogen Scattering Modelmentioning

confidence: 99%

Steady state and transient electron transport properties of bulk dilute GaNxAs1−x

Naylor

Dyson

Ridley

2012

Journal of Applied Physics

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Two valley ensemble Monte Carlo simulations have been performed to investigate the electronic transport properties of bulk GaNxAs1−x alloys where the nitrogen concentration x ≤ 0.02 (2%). We have investigated these properties using two separate approaches, 1) through simulation of GaAs using the standard Kane model with the addition of isolated and pair state nitrogen scattering mechanisms and 2) approximating the lower “mixed state” band that arises from the use of band-anticrossing model with an analytic function that implements the inflection point (for concentrations >1%). From the steady-state properties, we find that the nitrogen scattering model produces a better fit with other results, both theoretical and experimental. We also comment on the transient properties of GaNxAs1−x, noting that the velocity overshoot peaks are of a much lower velocity than is found in GaAs at comparable field strengths, and through the use of model 2, that negative effective mass states have a significant role in the transient behavior. We find that the system takes much longer to reach equilibrium when compared to bulk GaAs in both models, and through the use of model 2, there is a significant population of negative effective mass states when the system is subjected to higher fields.

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Electron-nitrogen scattering in dilute nitrides

Cited by 41 publications

References 38 publications

Effect of low nitrogen concentrations on the electronic properties ofInAs1−xNx

Effect of low nitrogen concentrations on the electronic properties ofInAs1−xNx

Energy and momentum relaxation dynamics of hot holes in modulation doped GaInNAs/GaAs quantum wells

Steady state and transient electron transport properties of bulk dilute GaNxAs1−x

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