Electron localization and interaction effects in palladium and palladium-gold films

McGinnis, W. C.; Chaikin, P. M.

doi:10.1103/physrevb.32.6319

Cited by 44 publications

(13 citation statements)

References 58 publications

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“…However, this eventuality is very unlikely, given the completely different nature of the two resistors. A weak increase of resistance of the palladium film with decreasing temperature is indeed predicted by electron localization theory, 8 but it has been estimated to be negligible for our case.…”

Section: Methodssupporting

confidence: 61%

“…1 The value predicted by the free-electron model Eq. ͑2͒, using electronic and elastic parameters of palladium reported in literature, 8,11 is roughly an order of magnitude smaller. Therefore, the simple clean 3D free-electron model predicts the right exponent n but fails to predict the magnitude of the e-p rate.…”

Section: Resultsmentioning

confidence: 96%

“…8 Thus, l is not substantially limited by the film thickness. The wave vector of the dominant thermal phonon q =2k B T / បv s is about 3 ϫ 10 6 m −1 at the lowest operating bath temperature 9 ͑T 0 =59 mK͒, leading to ql Ϸ 0.01.…”

Section: Methodsmentioning

confidence: 95%

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Hot-electron effect in palladium thin films

2007

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We have measured the hot-electron effect in sputtered palladium thin films at ultracryogenic temperatures. The temperature of the Joule-heated electron gas has been measured using a SQUID-based noise thermometer. Results are consistent with a T 3 dependence of the electron-phonon scattering rate, as reported for other materials. This dependence is in contrast with some theoretical predictions for the electron-phonon scattering rate in metals in the dirty limit and with recent experimental results on other metals.

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Section: Methodssupporting

confidence: 61%

Section: Resultsmentioning

confidence: 96%

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Hot-electron effect in palladium thin films

2007

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“…Typically, two contributions to these corrections due to the WAL effect and the 2D electron–electron interaction are taken into account

Δ G (T) = \frac{e^{2}}{π h} ([], α q + (1 - \frac{3}{4} F_{σ})) \ln ([], \frac{T}{T_{c}})

where the first term is due to the WAL effect, with α being the same constant as in Equation and q as the temperature coefficient of the phase coherence length l ϕ ∝ T − q /2 . The second term is referring to the electron–electron interaction, where F σ is depending on the electron screening length and expected to be in the range between 0 and 1 . For strong spin–orbit interaction F σ = 0 is expected, but negative values have also been reported .…”

Section: Resultsmentioning

confidence: 99%

Suppression of Grain Boundary Scattering in Multifunctional p‐Type Transparent γ‐CuI Thin Films due to Interface Tunneling Currents

Kneiß

Yang

Barzola‐Quiquia

et al. 2018

Adv Materials Inter

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Transparent p‐type conductive γ‐CuI thin films typically exhibit unexpectedly high hole mobilities in the range of 10 cm2 V−1 s−1 even when heavily textured. To explain this phenomenon, the transport properties of such thin films are investigated. The temperature‐dependent resistivities of the textured (111)‐oriented films with different carrier concentration are fitted using the fluctuation‐induced tunneling conductivity (FITC) model in series with a power law. The FITC model describes barriers at the grain boundaries whereas the power law considers the scattering in the metallic interior of the grains. Magnetoresistance measurements performed on a reactively DC‐sputtered thin film at low temperatures (T < 8 K) suggest a 2D weak antilocalization effect with phase coherence lengths of about 50 nm. This is corroborated by a typical logarithmic temperature dependence of the zero‐field conductance. An n‐type inversion layer or a defect band at the interfaces of the grains as origin of the 2D carrier system and the barriers at the grain boundaries is proposed. This leads to a conclusive description of the electrical transport properties of γ‐CuI thin films and explains the high hole mobilities which are due to a suppressed backscattering at the grain boundaries in the presence of tunneling channels.

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“…The measured resistance of the two parallel resistors at T=4.18 K is R s =8.72 Ω, leading to a nominal resistivity ρ =2.6×10 −7 Ωm. The corresponding elastic mean free path is estimated as l ≈ 3.3 nm using palladium electronic parameters reported in literature [9]. Thus, l is not substantially limited by the film thickness.…”

Section: Introductionmentioning

confidence: 90%

Cooling fins to limit the hot-electron effect in dc SQUIDs

Falferi

Mezzena

Vinante

2008

J. Phys.: Conf. Ser.

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Abstract. The generally accepted noise theory of the dc SQUID predicts that the energy resolution scales as the electron temperature in the Josephson junction shunt resistors. As in metals at low temperature the electron-phonon coupling becomes very weak, the electron gas of the thin film shunt resistors undergoes a Joule heating due to the bias current and its temperature can be significantly higher than that of the thermal bath. This heating, the hotelectron effect, causes a deviation from the linear behaviour of noise versus temperature and a saturation of the SQUID noise, typically at temperatures of about 200 mK. This effect can be reduced considerably by increasing the effective volume available for the electron-phonon interaction by attaching "large" cooling fins to the shunt resistors. Our measurements have been performed on two thin film devices made with the same design of a dc SQUID but without the Josephson junctions: one device with standard shunt resistors, the other with shunt resistors with cooling fins. From these measurements one can expect for the SQUID with cooling fins an improvement of the noise saturation temperature of at most a factor 2, from 200 mK to about 100 mK. IntroductionThe noise characteristics of the low-T c dc SQUID are well-explained by the resistively-and capacitively-shunted junction (RCSJ) model [1] in which a Nyquist current noise source is associated to each of the two shunt resistances R that are necessary to avoid hysteresis in the I-V characteristic of the Josephson junctions. This model predicts [2] for a dc SQUID under optimum conditions an energy resolution ε=S Φ /2L=9k B TL/R=16k B T(LC) 1/2 where S Φ is the flux noise spectral density, L is the SQUID loop inductance and C is the capacitance of each junction. The white noise of a large number of SQUIDs has been found in good agreement with these predictions. Although quoting this white noise (and the associated energy resolution) is not sufficient to completely characterize the SQUID noise (in fact one has to consider also the 1/f noise and the back action current noise in the SQUID loop) it is usually taken as an indication of the sensitivity of the device.In most experiments in which the SQUID is employed as the front-end amplifier, its noise is one of the parameters that limit the sensitivity of the measurement (see, for example [3]). Besides optimizing the geometrical parameters of the SQUID (low SQUID loop inductance and low junction capacitance)

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Electron localization and interaction effects in palladium and palladium-gold films

Cited by 44 publications

References 58 publications

Hot-electron effect in palladium thin films

Hot-electron effect in palladium thin films

Suppression of Grain Boundary Scattering in Multifunctional p‐Type Transparent γ‐CuI Thin Films due to Interface Tunneling Currents

Cooling fins to limit the hot-electron effect in dc SQUIDs

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