Electron emission and related properties of amorphous thin films of mixed barium and silicon oxides

Abidi, Abrar A.; Hogarth, C. A.

doi:10.1016/0040-6090(74)90007-8

Cited by 21 publications

(1 citation statement)

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“…These devices consist of a dielectric material sandwiched between two electrodes, resulting in a metal-insulator-metal (MIM) structure. A number of dielectric materials have been investigated including SiO/Nb,O, [2], SiO/GeO, [3], SiO,/Bi,O, [4], and BaO/SiO [5]. All these devices exhibit an increase in current by two to six orders of magnitude when electroformed and a permanent increase in the conductivity of the film is observed.…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of thick-film sandwich devices before and after electroforming

Arshak

Ansari

Collins

et al. 1994

Phys. Stat. Sol. (a)

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The electrical properties of a thick‐film sandwich device based on a metal‐resistor‐metal (MRM) structure are presented. A ruthenium‐based resistor is sandwiched between two silver‐palladium (Ag‐Pd) electrodes. The conduction mechanism before and after electroforming is examined. The device exhibits Poole‐Frenkel bulk limited conduction at high fields in the temperature range 290 to 393 K. The activation energy at high field and high temperature is estimated to be 4 meV, leading to the conclusion that hopping conduction takes place at high applied fields. The formed devices exhibit voltage‐controlled differential negative resistance and an increase in the conductivity under atmospheric pressure conditions. The characteristics are similar to those observed in thin‐film metal‐insulator‐metal (MIM) devices. However, the behaviour is not as pronounced, and this may be attributed to the increased resistor layer thickness.

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Section: Introductionmentioning

confidence: 99%