2010
DOI: 10.1063/1.3503457
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Abstract: Articles you may be interested inFluorine implantation for effective work function control in p -type metal-oxide-semiconductor high-k metal gate stacks J. Vac. Sci. Technol. B 29, 01A905 (2011); 10.1116/1.3521471Impact of mechanical stress on gate tunneling currents of germanium and silicon p -type metal-oxidesemiconductor field-effect transistors and metal gate work function

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Cited by 22 publications
(18 citation statements)
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References 34 publications
(25 reference statements)
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“…In order to calculate the transmittance and tunneling current, it was used the following parameters: Φ a = 1.52 eV, Φ b = 3.34 eV, ∆= 0.53 eV, d 1 = 0.5 nm, κ a = 13.5, κ b = 3.9 [18]. The electron effective mass in the HfSiO x N and TiN metal gate are considered to be isotropic and taken as 0.20m 0 and m 0 , respectively [13,24].…”
Section: Resultsmentioning
confidence: 99%
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“…In order to calculate the transmittance and tunneling current, it was used the following parameters: Φ a = 1.52 eV, Φ b = 3.34 eV, ∆= 0.53 eV, d 1 = 0.5 nm, κ a = 13.5, κ b = 3.9 [18]. The electron effective mass in the HfSiO x N and TiN metal gate are considered to be isotropic and taken as 0.20m 0 and m 0 , respectively [13,24].…”
Section: Resultsmentioning
confidence: 99%
“…However, they did not consider the coupling effects between longitudinal and transverse motions and anisotropic mass in the MOS capacitors. On the other hand, we have very recently developed an analytical model of tunneling in a TiN/HfSiO x N/SiO 2 /p-Si MOS capacitor by using Airy wave function approach which is including the coupling between longitudinal and transverse motions that is represented by an electron velocity in the metal gate [18]. In addition, it has been experimentally revealed that a high speed MOSFET was realized by injecting high velocity electrons [19].…”
Section: Introductionmentioning
confidence: 99%
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“…Furthermore, the tunneling current is calculated by using the following equation [17]: where k is the Boltzmann constant, T is the temperature, E F is the Fermi energy of metal, and…”
Section: Theoretical Modelmentioning
confidence: 99%
“…Finally, the tunneling current is computed by using the following equation [19]: (14) where k is the Boltzmann constant, T is the temperature, E F is the Fermi energy of metal, and…”
Section: Introductionmentioning
confidence: 99%